Tailoring the surface reactivity of silicon surfaces by partial halogenation

Autores
Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.
Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Functionalized Surfaces
Silicon Surfaces
Surface Reactivity
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/25838

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network_name_str CONICET Digital (CONICET)
spelling Tailoring the surface reactivity of silicon surfaces by partial halogenationSoria, Federico ArielPatrito, Eduardo MartinParedes Olivera, PatriciaFunctionalized SurfacesSilicon SurfacesSurface Reactivityhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Chemical Society2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/25838Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-180301932-7447CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1021/jp4014042info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp4014042info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:44:06Zoai:ri.conicet.gov.ar:11336/25838instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:44:06.628CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Tailoring the surface reactivity of silicon surfaces by partial halogenation
title Tailoring the surface reactivity of silicon surfaces by partial halogenation
spellingShingle Tailoring the surface reactivity of silicon surfaces by partial halogenation
Soria, Federico Ariel
Functionalized Surfaces
Silicon Surfaces
Surface Reactivity
title_short Tailoring the surface reactivity of silicon surfaces by partial halogenation
title_full Tailoring the surface reactivity of silicon surfaces by partial halogenation
title_fullStr Tailoring the surface reactivity of silicon surfaces by partial halogenation
title_full_unstemmed Tailoring the surface reactivity of silicon surfaces by partial halogenation
title_sort Tailoring the surface reactivity of silicon surfaces by partial halogenation
dc.creator.none.fl_str_mv Soria, Federico Ariel
Patrito, Eduardo Martin
Paredes Olivera, Patricia
author Soria, Federico Ariel
author_facet Soria, Federico Ariel
Patrito, Eduardo Martin
Paredes Olivera, Patricia
author_role author
author2 Patrito, Eduardo Martin
Paredes Olivera, Patricia
author2_role author
author
dc.subject.none.fl_str_mv Functionalized Surfaces
Silicon Surfaces
Surface Reactivity
topic Functionalized Surfaces
Silicon Surfaces
Surface Reactivity
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.
Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.
publishDate 2013
dc.date.none.fl_str_mv 2013-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/25838
Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-18030
1932-7447
CONICET Digital
CONICET
url http://hdl.handle.net/11336/25838
identifier_str_mv Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-18030
1932-7447
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1021/jp4014042
info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp4014042
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
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instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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