Tailoring the surface reactivity of silicon surfaces by partial halogenation
- Autores
- Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia
- Año de publicación
- 2013
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.
Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina - Materia
-
Functionalized Surfaces
Silicon Surfaces
Surface Reactivity - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/25838
Ver los metadatos del registro completo
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Tailoring the surface reactivity of silicon surfaces by partial halogenationSoria, Federico ArielPatrito, Eduardo MartinParedes Olivera, PatriciaFunctionalized SurfacesSilicon SurfacesSurface Reactivityhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges.Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Chemical Society2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/25838Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-180301932-7447CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1021/jp4014042info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp4014042info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:44:06Zoai:ri.conicet.gov.ar:11336/25838instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:44:06.628CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
title |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
spellingShingle |
Tailoring the surface reactivity of silicon surfaces by partial halogenation Soria, Federico Ariel Functionalized Surfaces Silicon Surfaces Surface Reactivity |
title_short |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
title_full |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
title_fullStr |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
title_full_unstemmed |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
title_sort |
Tailoring the surface reactivity of silicon surfaces by partial halogenation |
dc.creator.none.fl_str_mv |
Soria, Federico Ariel Patrito, Eduardo Martin Paredes Olivera, Patricia |
author |
Soria, Federico Ariel |
author_facet |
Soria, Federico Ariel Patrito, Eduardo Martin Paredes Olivera, Patricia |
author_role |
author |
author2 |
Patrito, Eduardo Martin Paredes Olivera, Patricia |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Functionalized Surfaces Silicon Surfaces Surface Reactivity |
topic |
Functionalized Surfaces Silicon Surfaces Surface Reactivity |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges. Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina |
description |
Density functional theory was used to investigate the reactivity of partially chlorinated and stepped silicon surfaces with molecules having N, O, and S head groups in relation to the development of selectively functionalized surfaces. The activation energy barriers for the formation of Si–N, Si–O, and Si–S bonds by breakage of the Si–Cl bond are very sensitive to steric factors and this fact can be used to tune the surface reactivity. Whereas the fully chlorinated Si(111) surface has high energy barriers in the range 34–64 kcal/mol for the reactions with NH3, H2O, H2S, CH3NH2, CH3OH, and CH3SH molecules, the partially chlorinated surface has much lower barriers in the range 13–34 kcal/mol, indicating that some molecules may react at almost room temperature with the SiCl groups. The reactions of these molecules on SiH groups have high energy barriers for all surfaces (in the range 33–42 kcal/mol) indicating that they form a matrix of unreactive groups around the reactive SiCl sites. Unlike the fully chlorinated Si(111) surface, the SiCl groups on the reconstructed step edges are very reactive, showing the lowest activation energy barriers. The different reactivities of SiCl groups on the terraces and step edges of fully chlorinated stepped silicon surfaces may allow the formation of molecular lines along the reactive step edges. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013-08 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/25838 Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-18030 1932-7447 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/25838 |
identifier_str_mv |
Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Tailoring the surface reactivity of silicon surfaces by partial halogenation; American Chemical Society; Journal of Physical Chemistry C; 117; 35; 8-2013; 18021-18030 1932-7447 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1021/jp4014042 info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp4014042 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Chemical Society |
publisher.none.fl_str_mv |
American Chemical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1842268645453987840 |
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13.13397 |