Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces
- Autores
- Juarez, Maria Fernanda; Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia
- Año de publicación
- 2008
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We investigated the influence of intermolecular interactions and subsurface oxidation on the structure, surface bonding, and reactivity of compact monolayers of small organic and inorganic molecules bound to the Si(111) surface via Si-C, Si-N, and Si-O bonds. We considered the following modified surfaces: Si-CH3, Si-CCH, Si-CN, Si-CH2CH3, Si-OCH 3, Si-OH, Si-NH2, Si-NHOH, and Si-ONH2. The highest hydrogen bond strength (7.5 kcal/mol) was observed for the (1 × 1) Si-NHOH monolayer. The (1 × 1) Si-CH2CH3 monolayer had the highest repulsion at the DFT level, 9.1 kcal/mol. However, inclusion of dispersion interactions yielded a repulsion of only 1.8 kcal/mol. Subsurface oxidation was investigated for -H, -CH3, and -CH2CH 3 terminated surfaces with surface coverages of 100 and 50%. The oxidation of the third Si-Si backbond is considerably more exothermic than me oxidation of the first and second backbonds. For monolayers with a surface coverage of 50%, the oxidation of alkylated silicon atoms is more stable than the oxidation of hydrogenated silicon atoms. The oxidation of alkylated silicon atoms stabilizes the organic monolayer for two reasons: a decrease of repulsive interactions between adjacent alkyl chains (due to the increase in intermolecular separations) and a strengmening of the Si-C surface bond. The reactivity of the grafted surfaces was investigated in the low coverage limit for the surface hydroxylation reaction with water. The highest activation barriers are obtained for the -CH3 (40.3 kcal/mol) and -CH 2CH3 (40.4 kcal/mol) terminated surfaces. The presence of conjugation in the organic molecule lowers the activation barrier. On the -CCH terminated surface, the activation energy decreases to 29.2 kcal/mol. The nucleophilic attack of silicon by water is facilitated on the -Cl, -OCH 3, and -NH2 terminated surfaces due to the increased positive charge of the silicon atom. The -NH2 and -Cl grafted surfaces are the most reactive with activation energies of 7.9 and 13.4 kcal/mol.
Fil: Juarez, Maria Fernanda. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Paredes Olivera, Patricia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina - Materia
-
Silicon
Subsurface Oxidation
Surface Modification
Ab Initio - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/114040
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Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfacesJuarez, Maria FernandaSoria, Federico ArielPatrito, Eduardo MartinParedes Olivera, PatriciaSiliconSubsurface OxidationSurface ModificationAb Initiohttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1We investigated the influence of intermolecular interactions and subsurface oxidation on the structure, surface bonding, and reactivity of compact monolayers of small organic and inorganic molecules bound to the Si(111) surface via Si-C, Si-N, and Si-O bonds. We considered the following modified surfaces: Si-CH3, Si-CCH, Si-CN, Si-CH2CH3, Si-OCH 3, Si-OH, Si-NH2, Si-NHOH, and Si-ONH2. The highest hydrogen bond strength (7.5 kcal/mol) was observed for the (1 × 1) Si-NHOH monolayer. The (1 × 1) Si-CH2CH3 monolayer had the highest repulsion at the DFT level, 9.1 kcal/mol. However, inclusion of dispersion interactions yielded a repulsion of only 1.8 kcal/mol. Subsurface oxidation was investigated for -H, -CH3, and -CH2CH 3 terminated surfaces with surface coverages of 100 and 50%. The oxidation of the third Si-Si backbond is considerably more exothermic than me oxidation of the first and second backbonds. For monolayers with a surface coverage of 50%, the oxidation of alkylated silicon atoms is more stable than the oxidation of hydrogenated silicon atoms. The oxidation of alkylated silicon atoms stabilizes the organic monolayer for two reasons: a decrease of repulsive interactions between adjacent alkyl chains (due to the increase in intermolecular separations) and a strengmening of the Si-C surface bond. The reactivity of the grafted surfaces was investigated in the low coverage limit for the surface hydroxylation reaction with water. The highest activation barriers are obtained for the -CH3 (40.3 kcal/mol) and -CH 2CH3 (40.4 kcal/mol) terminated surfaces. The presence of conjugation in the organic molecule lowers the activation barrier. On the -CCH terminated surface, the activation energy decreases to 29.2 kcal/mol. The nucleophilic attack of silicon by water is facilitated on the -Cl, -OCH 3, and -NH2 terminated surfaces due to the increased positive charge of the silicon atom. The -NH2 and -Cl grafted surfaces are the most reactive with activation energies of 7.9 and 13.4 kcal/mol.Fil: Juarez, Maria Fernanda. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Paredes Olivera, Patricia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaAmerican Chemical Society2008-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/114040Juarez, Maria Fernanda; Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces; American Chemical Society; Journal of Physical Chemistry C; 112; 38; 9-2008; 14867-148771932-74471932-7455CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp711307pinfo:eu-repo/semantics/altIdentifier/doi/10.1021/jp711307pinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:01:23Zoai:ri.conicet.gov.ar:11336/114040instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:01:23.339CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
title |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
spellingShingle |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces Juarez, Maria Fernanda Silicon Subsurface Oxidation Surface Modification Ab Initio |
title_short |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
title_full |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
title_fullStr |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
title_full_unstemmed |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
title_sort |
Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces |
dc.creator.none.fl_str_mv |
Juarez, Maria Fernanda Soria, Federico Ariel Patrito, Eduardo Martin Paredes Olivera, Patricia |
author |
Juarez, Maria Fernanda |
author_facet |
Juarez, Maria Fernanda Soria, Federico Ariel Patrito, Eduardo Martin Paredes Olivera, Patricia |
author_role |
author |
author2 |
Soria, Federico Ariel Patrito, Eduardo Martin Paredes Olivera, Patricia |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
Silicon Subsurface Oxidation Surface Modification Ab Initio |
topic |
Silicon Subsurface Oxidation Surface Modification Ab Initio |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We investigated the influence of intermolecular interactions and subsurface oxidation on the structure, surface bonding, and reactivity of compact monolayers of small organic and inorganic molecules bound to the Si(111) surface via Si-C, Si-N, and Si-O bonds. We considered the following modified surfaces: Si-CH3, Si-CCH, Si-CN, Si-CH2CH3, Si-OCH 3, Si-OH, Si-NH2, Si-NHOH, and Si-ONH2. The highest hydrogen bond strength (7.5 kcal/mol) was observed for the (1 × 1) Si-NHOH monolayer. The (1 × 1) Si-CH2CH3 monolayer had the highest repulsion at the DFT level, 9.1 kcal/mol. However, inclusion of dispersion interactions yielded a repulsion of only 1.8 kcal/mol. Subsurface oxidation was investigated for -H, -CH3, and -CH2CH 3 terminated surfaces with surface coverages of 100 and 50%. The oxidation of the third Si-Si backbond is considerably more exothermic than me oxidation of the first and second backbonds. For monolayers with a surface coverage of 50%, the oxidation of alkylated silicon atoms is more stable than the oxidation of hydrogenated silicon atoms. The oxidation of alkylated silicon atoms stabilizes the organic monolayer for two reasons: a decrease of repulsive interactions between adjacent alkyl chains (due to the increase in intermolecular separations) and a strengmening of the Si-C surface bond. The reactivity of the grafted surfaces was investigated in the low coverage limit for the surface hydroxylation reaction with water. The highest activation barriers are obtained for the -CH3 (40.3 kcal/mol) and -CH 2CH3 (40.4 kcal/mol) terminated surfaces. The presence of conjugation in the organic molecule lowers the activation barrier. On the -CCH terminated surface, the activation energy decreases to 29.2 kcal/mol. The nucleophilic attack of silicon by water is facilitated on the -Cl, -OCH 3, and -NH2 terminated surfaces due to the increased positive charge of the silicon atom. The -NH2 and -Cl grafted surfaces are the most reactive with activation energies of 7.9 and 13.4 kcal/mol. Fil: Juarez, Maria Fernanda. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Paredes Olivera, Patricia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina |
description |
We investigated the influence of intermolecular interactions and subsurface oxidation on the structure, surface bonding, and reactivity of compact monolayers of small organic and inorganic molecules bound to the Si(111) surface via Si-C, Si-N, and Si-O bonds. We considered the following modified surfaces: Si-CH3, Si-CCH, Si-CN, Si-CH2CH3, Si-OCH 3, Si-OH, Si-NH2, Si-NHOH, and Si-ONH2. The highest hydrogen bond strength (7.5 kcal/mol) was observed for the (1 × 1) Si-NHOH monolayer. The (1 × 1) Si-CH2CH3 monolayer had the highest repulsion at the DFT level, 9.1 kcal/mol. However, inclusion of dispersion interactions yielded a repulsion of only 1.8 kcal/mol. Subsurface oxidation was investigated for -H, -CH3, and -CH2CH 3 terminated surfaces with surface coverages of 100 and 50%. The oxidation of the third Si-Si backbond is considerably more exothermic than me oxidation of the first and second backbonds. For monolayers with a surface coverage of 50%, the oxidation of alkylated silicon atoms is more stable than the oxidation of hydrogenated silicon atoms. The oxidation of alkylated silicon atoms stabilizes the organic monolayer for two reasons: a decrease of repulsive interactions between adjacent alkyl chains (due to the increase in intermolecular separations) and a strengmening of the Si-C surface bond. The reactivity of the grafted surfaces was investigated in the low coverage limit for the surface hydroxylation reaction with water. The highest activation barriers are obtained for the -CH3 (40.3 kcal/mol) and -CH 2CH3 (40.4 kcal/mol) terminated surfaces. The presence of conjugation in the organic molecule lowers the activation barrier. On the -CCH terminated surface, the activation energy decreases to 29.2 kcal/mol. The nucleophilic attack of silicon by water is facilitated on the -Cl, -OCH 3, and -NH2 terminated surfaces due to the increased positive charge of the silicon atom. The -NH2 and -Cl grafted surfaces are the most reactive with activation energies of 7.9 and 13.4 kcal/mol. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/114040 Juarez, Maria Fernanda; Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces; American Chemical Society; Journal of Physical Chemistry C; 112; 38; 9-2008; 14867-14877 1932-7447 1932-7455 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/114040 |
identifier_str_mv |
Juarez, Maria Fernanda; Soria, Federico Ariel; Patrito, Eduardo Martin; Paredes Olivera, Patricia; Influence of subsurface oxidation on the structure, stability, and reactivity of grafted Si(111) surfaces; American Chemical Society; Journal of Physical Chemistry C; 112; 38; 9-2008; 14867-14877 1932-7447 1932-7455 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/abs/10.1021/jp711307p info:eu-repo/semantics/altIdentifier/doi/10.1021/jp711307p |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Chemical Society |
publisher.none.fl_str_mv |
American Chemical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1842979945231417344 |
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12.993085 |