Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3
- Autores
- Soria, Federico Ariel; Paredes Olivera, Patricia; Patrito, Eduardo Martin
- Año de publicación
- 2014
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The chemical stability of compact monolayers on silicon toward oxidizing agents is a key issue for the use of such monolayers in devices such as solar cells or in the electronics industry. In this work, we investigated the reactivity toward H2O, O2, and OH species of monolayers terminated with a methyl group to unveil the mechanisms that prevent the oxidation of the underlying silicon. Density functional theory calculations were performed to investigate the reaction pathways for the two competing processes involved: diffusion through the monolayer and reaction with the terminal methyl group. Activation energy barriers for the diffusion of H2O and O2 are very sensitive to the monolayer structure, and they increase in the order —CH2—CH2—CH3 < —C≡C—CH3 < —CH═CH—CH3 with energy barriers of 0.0 kcal/mol (0.0 kcal/mol), 35.0 kcal/mol (42.5 kcal/mol), and 57.0 kcal/mol (64.1 kcal/mol), respectively, for H2O (O2). This agrees with ordering of stabilities reported experimentally for these monolayers. The oxidation of the terminal methyl group by O2 is less affected by steric constraints. The formation of the —CH2OOH species has an energy barrier of 56.5 kcal/mol on the rigid —CH3 monolayer, whereas this barrier decreases to 40.7 kcal/mol on the —C≡C—CH3 monolayer. In the case of the methyl monolayer, the abstraction of a H atom of the —CH3 group has smaller energy barriers with singlet O2 and OH reactants, with values of 38.4 and 3.5 kcal/mol, respectively. The high energy barriers of all of the processes investigated indicate that compact monolayers hinder the oxidation of the underlying substrate. The passivating capability of the monolayers correlates with the steric constraints for H2O and O2 diffusion.
Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina
Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina - Materia
-
Silicon Surfaces
Reactivity
Alkanethiols Monolayers - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/31352
Ver los metadatos del registro completo
id |
CONICETDig_f9cf01e008fc0dcf05cc6a7e52f9be31 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/31352 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3Soria, Federico ArielParedes Olivera, PatriciaPatrito, Eduardo MartinSilicon SurfacesReactivityAlkanethiols Monolayershttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2The chemical stability of compact monolayers on silicon toward oxidizing agents is a key issue for the use of such monolayers in devices such as solar cells or in the electronics industry. In this work, we investigated the reactivity toward H2O, O2, and OH species of monolayers terminated with a methyl group to unveil the mechanisms that prevent the oxidation of the underlying silicon. Density functional theory calculations were performed to investigate the reaction pathways for the two competing processes involved: diffusion through the monolayer and reaction with the terminal methyl group. Activation energy barriers for the diffusion of H2O and O2 are very sensitive to the monolayer structure, and they increase in the order —CH2—CH2—CH3 < —C≡C—CH3 < —CH═CH—CH3 with energy barriers of 0.0 kcal/mol (0.0 kcal/mol), 35.0 kcal/mol (42.5 kcal/mol), and 57.0 kcal/mol (64.1 kcal/mol), respectively, for H2O (O2). This agrees with ordering of stabilities reported experimentally for these monolayers. The oxidation of the terminal methyl group by O2 is less affected by steric constraints. The formation of the —CH2OOH species has an energy barrier of 56.5 kcal/mol on the rigid —CH3 monolayer, whereas this barrier decreases to 40.7 kcal/mol on the —C≡C—CH3 monolayer. In the case of the methyl monolayer, the abstraction of a H atom of the —CH3 group has smaller energy barriers with singlet O2 and OH reactants, with values of 38.4 and 3.5 kcal/mol, respectively. The high energy barriers of all of the processes investigated indicate that compact monolayers hinder the oxidation of the underlying substrate. The passivating capability of the monolayers correlates with the steric constraints for H2O and O2 diffusion.Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaAmerican Chemical Society2014-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/31352Soria, Federico Ariel; Paredes Olivera, Patricia; Patrito, Eduardo Martin; Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3; American Chemical Society; Journal of Physical Chemistry C; 119; 12-2014; 284-2951932-7447CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/10.1021/jp508728vinfo:eu-repo/semantics/altIdentifier/doi/10.1021/jp508728vinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:20:50Zoai:ri.conicet.gov.ar:11336/31352instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:20:50.435CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
title |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
spellingShingle |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 Soria, Federico Ariel Silicon Surfaces Reactivity Alkanethiols Monolayers |
title_short |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
title_full |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
title_fullStr |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
title_full_unstemmed |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
title_sort |
Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3 |
dc.creator.none.fl_str_mv |
Soria, Federico Ariel Paredes Olivera, Patricia Patrito, Eduardo Martin |
author |
Soria, Federico Ariel |
author_facet |
Soria, Federico Ariel Paredes Olivera, Patricia Patrito, Eduardo Martin |
author_role |
author |
author2 |
Paredes Olivera, Patricia Patrito, Eduardo Martin |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Silicon Surfaces Reactivity Alkanethiols Monolayers |
topic |
Silicon Surfaces Reactivity Alkanethiols Monolayers |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
The chemical stability of compact monolayers on silicon toward oxidizing agents is a key issue for the use of such monolayers in devices such as solar cells or in the electronics industry. In this work, we investigated the reactivity toward H2O, O2, and OH species of monolayers terminated with a methyl group to unveil the mechanisms that prevent the oxidation of the underlying silicon. Density functional theory calculations were performed to investigate the reaction pathways for the two competing processes involved: diffusion through the monolayer and reaction with the terminal methyl group. Activation energy barriers for the diffusion of H2O and O2 are very sensitive to the monolayer structure, and they increase in the order —CH2—CH2—CH3 < —C≡C—CH3 < —CH═CH—CH3 with energy barriers of 0.0 kcal/mol (0.0 kcal/mol), 35.0 kcal/mol (42.5 kcal/mol), and 57.0 kcal/mol (64.1 kcal/mol), respectively, for H2O (O2). This agrees with ordering of stabilities reported experimentally for these monolayers. The oxidation of the terminal methyl group by O2 is less affected by steric constraints. The formation of the —CH2OOH species has an energy barrier of 56.5 kcal/mol on the rigid —CH3 monolayer, whereas this barrier decreases to 40.7 kcal/mol on the —C≡C—CH3 monolayer. In the case of the methyl monolayer, the abstraction of a H atom of the —CH3 group has smaller energy barriers with singlet O2 and OH reactants, with values of 38.4 and 3.5 kcal/mol, respectively. The high energy barriers of all of the processes investigated indicate that compact monolayers hinder the oxidation of the underlying substrate. The passivating capability of the monolayers correlates with the steric constraints for H2O and O2 diffusion. Fil: Soria, Federico Ariel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina Fil: Paredes Olivera, Patricia. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Patrito, Eduardo Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; Argentina |
description |
The chemical stability of compact monolayers on silicon toward oxidizing agents is a key issue for the use of such monolayers in devices such as solar cells or in the electronics industry. In this work, we investigated the reactivity toward H2O, O2, and OH species of monolayers terminated with a methyl group to unveil the mechanisms that prevent the oxidation of the underlying silicon. Density functional theory calculations were performed to investigate the reaction pathways for the two competing processes involved: diffusion through the monolayer and reaction with the terminal methyl group. Activation energy barriers for the diffusion of H2O and O2 are very sensitive to the monolayer structure, and they increase in the order —CH2—CH2—CH3 < —C≡C—CH3 < —CH═CH—CH3 with energy barriers of 0.0 kcal/mol (0.0 kcal/mol), 35.0 kcal/mol (42.5 kcal/mol), and 57.0 kcal/mol (64.1 kcal/mol), respectively, for H2O (O2). This agrees with ordering of stabilities reported experimentally for these monolayers. The oxidation of the terminal methyl group by O2 is less affected by steric constraints. The formation of the —CH2OOH species has an energy barrier of 56.5 kcal/mol on the rigid —CH3 monolayer, whereas this barrier decreases to 40.7 kcal/mol on the —C≡C—CH3 monolayer. In the case of the methyl monolayer, the abstraction of a H atom of the —CH3 group has smaller energy barriers with singlet O2 and OH reactants, with values of 38.4 and 3.5 kcal/mol, respectively. The high energy barriers of all of the processes investigated indicate that compact monolayers hinder the oxidation of the underlying substrate. The passivating capability of the monolayers correlates with the steric constraints for H2O and O2 diffusion. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-12 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/31352 Soria, Federico Ariel; Paredes Olivera, Patricia; Patrito, Eduardo Martin; Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3; American Chemical Society; Journal of Physical Chemistry C; 119; 12-2014; 284-295 1932-7447 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/31352 |
identifier_str_mv |
Soria, Federico Ariel; Paredes Olivera, Patricia; Patrito, Eduardo Martin; Chemical Stability toward O2 and H2O of Si(111) Grafted with —CH3, —CH2CH2CH3, —CHCHCH3, and —CCCH3; American Chemical Society; Journal of Physical Chemistry C; 119; 12-2014; 284-295 1932-7447 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://pubs.acs.org/doi/10.1021/jp508728v info:eu-repo/semantics/altIdentifier/doi/10.1021/jp508728v |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Chemical Society |
publisher.none.fl_str_mv |
American Chemical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1846083357057744896 |
score |
13.22299 |