A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells

Autores
Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.
Fil: Strengers, J.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J. K.. Utrecht University; Países Bajos
Fil: Schropp, R. E. I.. Utrecht University; Países Bajos
Materia
Solar Cells
Microcrystalline Silicon
Computer Modeling
Characteristic Curves
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/20891
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/20891
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cellsStrengers, J.Rubinelli, Francisco AlbertoRath, J. K.Schropp, R. E. I.Solar CellsMicrocrystalline SiliconComputer ModelingCharacteristic Curveshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.Fil: Strengers, J.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rath, J. K.. Utrecht University; Países BajosFil: Schropp, R. E. I.. Utrecht University; Países BajosElsevier Science Sa2006-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/20891Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.; A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells; Elsevier Science Sa; Thin Solid Films; 501; 1-2; 12-2006; 291-2940040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.07.198info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005010710info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:07:08Zoai:ri.conicet.gov.ar:11336/20891instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:07:08.676CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
title A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
spellingShingle A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
Strengers, J.
Solar Cells
Microcrystalline Silicon
Computer Modeling
Characteristic Curves
title_short A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
title_full A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
title_fullStr A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
title_full_unstemmed A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
title_sort A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells
dc.creator.none.fl_str_mv Strengers, J.
Rubinelli, Francisco Alberto
Rath, J. K.
Schropp, R. E. I.
author Strengers, J.
author_facet Strengers, J.
Rubinelli, Francisco Alberto
Rath, J. K.
Schropp, R. E. I.
author_role author
author2 Rubinelli, Francisco Alberto
Rath, J. K.
Schropp, R. E. I.
author2_role author
author
author
dc.subject.none.fl_str_mv Solar Cells
Microcrystalline Silicon
Computer Modeling
Characteristic Curves
topic Solar Cells
Microcrystalline Silicon
Computer Modeling
Characteristic Curves
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.
Fil: Strengers, J.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J. K.. Utrecht University; Países Bajos
Fil: Schropp, R. E. I.. Utrecht University; Países Bajos
description Microcrystalline silicon solar cells with intrinsic layer thicknesses between 500 and 3000 nm deposited using the hot-wire CVD techniqueare investigated, combining experimental characterisation with computer simulations. Fitting of the solar cell characteristic curves shows thatthis material has a density of dangling bonds and drift mobility that are comparable to that of amorphous silicon, whereas its mobility bandgap is closer to the value of crystalline silicon. These fittings can be done assuming homogeneous electrical parameters in the intrinsic layers.A maximum in solar cell performance was seen for i-layer thickness of 3000 nm.
publishDate 2006
dc.date.none.fl_str_mv 2006-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/20891
Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.; A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells; Elsevier Science Sa; Thin Solid Films; 501; 1-2; 12-2006; 291-294
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/20891
identifier_str_mv Strengers, J.; Rubinelli, Francisco Alberto; Rath, J. K.; Schropp, R. E. I.; A combined experimental and computer simulation study of HWCVD nip microcrystalline silicon solar cells; Elsevier Science Sa; Thin Solid Films; 501; 1-2; 12-2006; 291-294
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.07.198
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005010710
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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