Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD

Autores
Concari, Sonia Beatriz; Buitrago, Roman Horacio
Año de publicación
2003
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The results of a study of phase transformation in hydrogenated microcrystalline silicon thin films prepared from hydrogen-diluted silane and exposed to an Ar+ laser light are presented. Through Raman spectroscopy, it was determined that the induced phase transformation is interrelated with silane dilution in hydrogen used as a reactive gas in the preparation of the films and, therefore, depends on the grain size and crystalline fraction of the material. Dark conductivity, transmission electronic microscopy (TEM) and atomic-force microscopy (AFM) data have been used to corroborate the Raman measurements. The results show that the sequence of phase transformation in microcrystalline thin films presents different characteristics from those, which are produced in single-crystal silicon structures. The occurrence of a Raman peak at 350 cm?1 is attributed to the formation of the Si-XII phase. A thermal model to explain the phase transformation is proposed. To our knowledge, neither the presence of the phase Si-XII nor the phase transformation process in microcrystalline silicon thin films has been reported before.
Fil: Concari, Sonia Beatriz. Universidad Nacional del Litoral; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Silicon
Microcrystalline
Thin Films
Raman
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/27392
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/27392
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVDConcari, Sonia BeatrizBuitrago, Roman HoracioSiliconMicrocrystallineThin FilmsRamanhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The results of a study of phase transformation in hydrogenated microcrystalline silicon thin films prepared from hydrogen-diluted silane and exposed to an Ar+ laser light are presented. Through Raman spectroscopy, it was determined that the induced phase transformation is interrelated with silane dilution in hydrogen used as a reactive gas in the preparation of the films and, therefore, depends on the grain size and crystalline fraction of the material. Dark conductivity, transmission electronic microscopy (TEM) and atomic-force microscopy (AFM) data have been used to corroborate the Raman measurements. The results show that the sequence of phase transformation in microcrystalline thin films presents different characteristics from those, which are produced in single-crystal silicon structures. The occurrence of a Raman peak at 350 cm?1 is attributed to the formation of the Si-XII phase. A thermal model to explain the phase transformation is proposed. To our knowledge, neither the presence of the phase Si-XII nor the phase transformation process in microcrystalline silicon thin films has been reported before.Fil: Concari, Sonia Beatriz. Universidad Nacional del Litoral; ArgentinaFil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaIOP Publishing2003-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27392Concari, Sonia Beatriz; Buitrago, Roman Horacio; Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD; IOP Publishing; Semiconductor Science And Technology; 18; 9; 7-2003; 864-8690268-1242CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/stacks.iop.org/SST/18/864info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/18/9/309info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:59:45Zoai:ri.conicet.gov.ar:11336/27392instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:59:45.9CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
title Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
spellingShingle Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
Concari, Sonia Beatriz
Silicon
Microcrystalline
Thin Films
Raman
title_short Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
title_full Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
title_fullStr Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
title_full_unstemmed Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
title_sort Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD
dc.creator.none.fl_str_mv Concari, Sonia Beatriz
Buitrago, Roman Horacio
author Concari, Sonia Beatriz
author_facet Concari, Sonia Beatriz
Buitrago, Roman Horacio
author_role author
author2 Buitrago, Roman Horacio
author2_role author
dc.subject.none.fl_str_mv Silicon
Microcrystalline
Thin Films
Raman
topic Silicon
Microcrystalline
Thin Films
Raman
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The results of a study of phase transformation in hydrogenated microcrystalline silicon thin films prepared from hydrogen-diluted silane and exposed to an Ar+ laser light are presented. Through Raman spectroscopy, it was determined that the induced phase transformation is interrelated with silane dilution in hydrogen used as a reactive gas in the preparation of the films and, therefore, depends on the grain size and crystalline fraction of the material. Dark conductivity, transmission electronic microscopy (TEM) and atomic-force microscopy (AFM) data have been used to corroborate the Raman measurements. The results show that the sequence of phase transformation in microcrystalline thin films presents different characteristics from those, which are produced in single-crystal silicon structures. The occurrence of a Raman peak at 350 cm?1 is attributed to the formation of the Si-XII phase. A thermal model to explain the phase transformation is proposed. To our knowledge, neither the presence of the phase Si-XII nor the phase transformation process in microcrystalline silicon thin films has been reported before.
Fil: Concari, Sonia Beatriz. Universidad Nacional del Litoral; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description The results of a study of phase transformation in hydrogenated microcrystalline silicon thin films prepared from hydrogen-diluted silane and exposed to an Ar+ laser light are presented. Through Raman spectroscopy, it was determined that the induced phase transformation is interrelated with silane dilution in hydrogen used as a reactive gas in the preparation of the films and, therefore, depends on the grain size and crystalline fraction of the material. Dark conductivity, transmission electronic microscopy (TEM) and atomic-force microscopy (AFM) data have been used to corroborate the Raman measurements. The results show that the sequence of phase transformation in microcrystalline thin films presents different characteristics from those, which are produced in single-crystal silicon structures. The occurrence of a Raman peak at 350 cm?1 is attributed to the formation of the Si-XII phase. A thermal model to explain the phase transformation is proposed. To our knowledge, neither the presence of the phase Si-XII nor the phase transformation process in microcrystalline silicon thin films has been reported before.
publishDate 2003
dc.date.none.fl_str_mv 2003-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/27392
Concari, Sonia Beatriz; Buitrago, Roman Horacio; Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD; IOP Publishing; Semiconductor Science And Technology; 18; 9; 7-2003; 864-869
0268-1242
CONICET Digital
CONICET
url http://hdl.handle.net/11336/27392
identifier_str_mv Concari, Sonia Beatriz; Buitrago, Roman Horacio; Raman monitoring laser-induced phase transformation in microcrystalline silicon thin films prepared by PECVD; IOP Publishing; Semiconductor Science And Technology; 18; 9; 7-2003; 864-869
0268-1242
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/stacks.iop.org/SST/18/864
info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/18/9/309
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269599530221568
score 13.13397

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