Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation

Autores
Blasco, Juli; Ghenzi, Néstor; Suãé, Jordi; Levy, Pablo Eduardo; Miranda, Enrique
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
An equivalent circuit representation for the conduction characteristics of TiO2-based resistive switches based on the generalized diode equation is reported. The proposed model consists of two antiparallel diodes with series and parallel resistances representing the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects. The model accounts for the pulse-induced hysteretic behavior exhibited by the I-V characteristic after electroforming. Three different approaches, each one of them with increased complexity, are assessed: 1) constant; 2) nanowire-like; and 3) sigmoidal diode amplitude. In all cases, the logarithmic conductance of the diodes is modeled using a logistic-type threshold function.
Fil: Blasco, Juli. Universitat Autònoma de Barcelona; España
Fil: Ghenzi, Néstor. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Suãé, Jordi. Universitat Autònoma de Barcelona; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Materia
Modelling
Diode
Memristor
Resistive Switching
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/33395
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/33395
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network_name_str CONICET Digital (CONICET)
spelling Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode EquationBlasco, JuliGhenzi, NéstorSuãé, JordiLevy, Pablo EduardoMiranda, EnriqueModellingDiodeMemristorResistive Switchinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1An equivalent circuit representation for the conduction characteristics of TiO2-based resistive switches based on the generalized diode equation is reported. The proposed model consists of two antiparallel diodes with series and parallel resistances representing the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects. The model accounts for the pulse-induced hysteretic behavior exhibited by the I-V characteristic after electroforming. Three different approaches, each one of them with increased complexity, are assessed: 1) constant; 2) nanowire-like; and 3) sigmoidal diode amplitude. In all cases, the logarithmic conductance of the diodes is modeled using a logistic-type threshold function.Fil: Blasco, Juli. Universitat Autònoma de Barcelona; EspañaFil: Ghenzi, Néstor. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Suãé, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaInstitute of Electrical and Electronics Engineers2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/33395Suãé, Jordi; Levy, Pablo Eduardo; Miranda, Enrique; Blasco, Juli; Ghenzi, Néstor; Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 35; 3; 1-2014; 390-3920741-31061558-0563CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6717179/info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2014.2297992info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:56:24Zoai:ri.conicet.gov.ar:11336/33395instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:56:25.626CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
title Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
spellingShingle Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
Blasco, Juli
Modelling
Diode
Memristor
Resistive Switching
title_short Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
title_full Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
title_fullStr Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
title_full_unstemmed Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
title_sort Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation
dc.creator.none.fl_str_mv Blasco, Juli
Ghenzi, Néstor
Suãé, Jordi
Levy, Pablo Eduardo
Miranda, Enrique
author Blasco, Juli
author_facet Blasco, Juli
Ghenzi, Néstor
Suãé, Jordi
Levy, Pablo Eduardo
Miranda, Enrique
author_role author
author2 Ghenzi, Néstor
Suãé, Jordi
Levy, Pablo Eduardo
Miranda, Enrique
author2_role author
author
author
author
dc.subject.none.fl_str_mv Modelling
Diode
Memristor
Resistive Switching
topic Modelling
Diode
Memristor
Resistive Switching
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv An equivalent circuit representation for the conduction characteristics of TiO2-based resistive switches based on the generalized diode equation is reported. The proposed model consists of two antiparallel diodes with series and parallel resistances representing the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects. The model accounts for the pulse-induced hysteretic behavior exhibited by the I-V characteristic after electroforming. Three different approaches, each one of them with increased complexity, are assessed: 1) constant; 2) nanowire-like; and 3) sigmoidal diode amplitude. In all cases, the logarithmic conductance of the diodes is modeled using a logistic-type threshold function.
Fil: Blasco, Juli. Universitat Autònoma de Barcelona; España
Fil: Ghenzi, Néstor. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Suãé, Jordi. Universitat Autònoma de Barcelona; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
description An equivalent circuit representation for the conduction characteristics of TiO2-based resistive switches based on the generalized diode equation is reported. The proposed model consists of two antiparallel diodes with series and parallel resistances representing the filamentary current pathway spanning the oxide layer and the possible parasitic conduction effects. The model accounts for the pulse-induced hysteretic behavior exhibited by the I-V characteristic after electroforming. Three different approaches, each one of them with increased complexity, are assessed: 1) constant; 2) nanowire-like; and 3) sigmoidal diode amplitude. In all cases, the logarithmic conductance of the diodes is modeled using a logistic-type threshold function.
publishDate 2014
dc.date.none.fl_str_mv 2014-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/33395
Suãé, Jordi; Levy, Pablo Eduardo; Miranda, Enrique; Blasco, Juli; Ghenzi, Néstor; Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 35; 3; 1-2014; 390-392
0741-3106
1558-0563
CONICET Digital
CONICET
url http://hdl.handle.net/11336/33395
identifier_str_mv Suãé, Jordi; Levy, Pablo Eduardo; Miranda, Enrique; Blasco, Juli; Ghenzi, Néstor; Modeling of the Hysteretic I-V Characteristics of TiO2-Based Resistive Switches Using the Generalized Diode Equation; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 35; 3; 1-2014; 390-392
0741-3106
1558-0563
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6717179/
info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2014.2297992
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269402257424384
score 13.13397

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