One-transistor one-resistor (1T1R) cell for large-area electronics

Autores
Ghenzi, N.; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; Beltrán, M.; Knez, M.; Hueso, L.; Stoliar, P.
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Fil: Ghenzi, N. Nanoscience Corporate Research Center; España
Fil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Ghenzi, N. Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Rozenberg, M. Université Paris Sud; Francia
Fil: Pietrobon, L. Nanoscience Corporate Research Center; España
Fil: Llopis, R. Nanoscience Corporate Research Center; España
Fil: Gay, R. Nanoscience Corporate Research Center; España
Fil: Beltrán, M. Nanoscience Corporate Research Center; España
Fil: Knez, M. Nanoscience Corporate Research Center; España
Fil: Knez, M. Basque Foundation for Science. Ikerbasque; España
Fil: Hueso, L. Nanoscience Corporate Research Center; España
Fil: Hueso, L. Basque Foundation for Science. Ikerbasque; España
Fil: Stoliar, P. Nanoscience Corporate Research Center; España
Fil: Stoliar, P. National Institute of Advanced Industrial Science and Technology; Japón
Abstrat: We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.
Fuente
Applied Physics Letters 2018.113:072108
Materia
CIRCUITOS ELECTRONICOS
MICROELECTRONICA
TRANSISTORES
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/4.0/
Repositorio
Repositorio Institucional (UCA)
Institución
Pontificia Universidad Católica Argentina
OAI Identificador
oai:ucacris:123456789/8610
Acceder
id RIUCA_3817c32831ab19092a42aadd4f36574d
oai_identifier_str oai:ucacris:123456789/8610
network_acronym_str RIUCA
repository_id_str 2585
network_name_str Repositorio Institucional (UCA)
spelling One-transistor one-resistor (1T1R) cell for large-area electronicsGhenzi, N.Rozenberg, M.Pietrobon, L.Llopis, R.Gay, R.Beltrán, M.Knez, M.Hueso, L.Stoliar, P.CIRCUITOS ELECTRONICOSMICROELECTRONICATRANSISTORESFil: Ghenzi, N. Nanoscience Corporate Research Center; EspañaFil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Ghenzi, N. Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; ArgentinaFil: Rozenberg, M. Université Paris Sud; FranciaFil: Pietrobon, L. Nanoscience Corporate Research Center; EspañaFil: Llopis, R. Nanoscience Corporate Research Center; EspañaFil: Gay, R. Nanoscience Corporate Research Center; EspañaFil: Beltrán, M. Nanoscience Corporate Research Center; EspañaFil: Knez, M. Nanoscience Corporate Research Center; EspañaFil: Knez, M. Basque Foundation for Science. Ikerbasque; EspañaFil: Hueso, L. Nanoscience Corporate Research Center; EspañaFil: Hueso, L. Basque Foundation for Science. Ikerbasque; EspañaFil: Stoliar, P. Nanoscience Corporate Research Center; EspañaFil: Stoliar, P. National Institute of Advanced Industrial Science and Technology; JapónAbstrat: We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.AIP Publishing2018info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttps://repositorio.uca.edu.ar/handle/123456789/86101077-3118 (online)0003-6951 (print)10.1063/1.5040126Ghenzi N, Rozenberg M, Pietrobon L, Llopis R, Gay R, Beltrán M, Knez M, Hueso L, y P. Stoliar. 2018. One-transistor one-resistor (1T1R) cell for large-area electronics [en línea]. Applied Physics Letters 113, 072108. doi: 10.1063/1.5040126 Disponible en: https://repositorio.uca.edu.ar/handle/123456789/8610Applied Physics Letters 2018.113:072108reponame:Repositorio Institucional (UCA)instname:Pontificia Universidad Católica Argentinaenginfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/4.0/2025-07-03T10:56:52Zoai:ucacris:123456789/8610instacron:UCAInstitucionalhttps://repositorio.uca.edu.ar/Universidad privadaNo correspondehttps://repositorio.uca.edu.ar/oaiclaudia_fernandez@uca.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:25852025-07-03 10:56:52.516Repositorio Institucional (UCA) - Pontificia Universidad Católica Argentinafalse
dc.title.none.fl_str_mv One-transistor one-resistor (1T1R) cell for large-area electronics
title One-transistor one-resistor (1T1R) cell for large-area electronics
spellingShingle One-transistor one-resistor (1T1R) cell for large-area electronics
Ghenzi, N.
CIRCUITOS ELECTRONICOS
MICROELECTRONICA
TRANSISTORES
title_short One-transistor one-resistor (1T1R) cell for large-area electronics
title_full One-transistor one-resistor (1T1R) cell for large-area electronics
title_fullStr One-transistor one-resistor (1T1R) cell for large-area electronics
title_full_unstemmed One-transistor one-resistor (1T1R) cell for large-area electronics
title_sort One-transistor one-resistor (1T1R) cell for large-area electronics
dc.creator.none.fl_str_mv Ghenzi, N.
Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author Ghenzi, N.
author_facet Ghenzi, N.
Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author_role author
author2 Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv CIRCUITOS ELECTRONICOS
MICROELECTRONICA
TRANSISTORES
topic CIRCUITOS ELECTRONICOS
MICROELECTRONICA
TRANSISTORES
dc.description.none.fl_txt_mv Fil: Ghenzi, N. Nanoscience Corporate Research Center; España
Fil: Ghenzi, N. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Ghenzi, N. Universidad Católica Argentina. Facultad de Ingeniería y Ciencias Agrarias; Argentina
Fil: Rozenberg, M. Université Paris Sud; Francia
Fil: Pietrobon, L. Nanoscience Corporate Research Center; España
Fil: Llopis, R. Nanoscience Corporate Research Center; España
Fil: Gay, R. Nanoscience Corporate Research Center; España
Fil: Beltrán, M. Nanoscience Corporate Research Center; España
Fil: Knez, M. Nanoscience Corporate Research Center; España
Fil: Knez, M. Basque Foundation for Science. Ikerbasque; España
Fil: Hueso, L. Nanoscience Corporate Research Center; España
Fil: Hueso, L. Basque Foundation for Science. Ikerbasque; España
Fil: Stoliar, P. Nanoscience Corporate Research Center; España
Fil: Stoliar, P. National Institute of Advanced Industrial Science and Technology; Japón
Abstrat: We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.
description Fil: Ghenzi, N. Nanoscience Corporate Research Center; España
publishDate 2018
dc.date.none.fl_str_mv 2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://repositorio.uca.edu.ar/handle/123456789/8610
1077-3118 (online)
0003-6951 (print)
10.1063/1.5040126
Ghenzi N, Rozenberg M, Pietrobon L, Llopis R, Gay R, Beltrán M, Knez M, Hueso L, y P. Stoliar. 2018. One-transistor one-resistor (1T1R) cell for large-area electronics [en línea]. Applied Physics Letters 113, 072108. doi: 10.1063/1.5040126 Disponible en: https://repositorio.uca.edu.ar/handle/123456789/8610
url https://repositorio.uca.edu.ar/handle/123456789/8610
identifier_str_mv 1077-3118 (online)
0003-6951 (print)
10.1063/1.5040126
Ghenzi N, Rozenberg M, Pietrobon L, Llopis R, Gay R, Beltrán M, Knez M, Hueso L, y P. Stoliar. 2018. One-transistor one-resistor (1T1R) cell for large-area electronics [en línea]. Applied Physics Letters 113, 072108. doi: 10.1063/1.5040126 Disponible en: https://repositorio.uca.edu.ar/handle/123456789/8610
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/4.0/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/4.0/
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv Applied Physics Letters 2018.113:072108
reponame:Repositorio Institucional (UCA)
instname:Pontificia Universidad Católica Argentina
reponame_str Repositorio Institucional (UCA)
collection Repositorio Institucional (UCA)
instname_str Pontificia Universidad Católica Argentina
repository.name.fl_str_mv Repositorio Institucional (UCA) - Pontificia Universidad Católica Argentina
repository.mail.fl_str_mv claudia_fernandez@uca.edu.ar
_version_ 1836638347394547712
score 13.13397

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