Role of Metal Contacts on Halide Perovskite Memristors

Autores
Pérez Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; Arredondo, Belén; Guerrero, Antonio
Año de publicación
2023
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of the metal contact and its connection with the activation process, four model systems are screened on halide perovskite memristors: Nearly inert metals (Au and Pt), low reactivity contacts (Cu), highly reactive contact (Ag and Al), and pre-oxidized metal in the form of AgI. It is revealed that the threshold voltage for activation of the memory effect is highly connected with the electrochemical activity of the metals. Redox/capacitive peaks are observed for reactive metals at positive potentials and charged ions are formed that can follow the electrical field. Activation proceeds by formation of conductive filaments, either by the direct migration of the charged metals or by an increase in the concentration of halide vacancies generated by this electrochemical reaction. Importantly, the use of pre-oxidized Ag+ ions leads to very low threshold voltages of ≈0.2 V indicating that an additional electrochemical reaction is not needed in this system to activate the memristor. Overall, the effect of the metal contact is clarified, and it is revealed that AgI is a very promising interfacial layer for low-energy applications.
Fil: Pérez Martínez, José Carlos. Universitat Jaume I; España
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Salehpour, Saeed. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Bahari, Ali. University of Mazandaran; Irán
Fil: Arredondo, Belén. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Guerrero, Antonio. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Materia
HALIDE PEROVSKITES
MEMRISTORS
ELECTROCHEMICAL ACTIVITY
CONDUCTIVE FILAMENTS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/278355
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/278355
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Role of Metal Contacts on Halide Perovskite MemristorsPérez Martínez, José CarlosBerruet, MarianaGonzales, CedricSalehpour, SaeedBahari, AliArredondo, BelénGuerrero, AntonioHALIDE PEROVSKITESMEMRISTORSELECTROCHEMICAL ACTIVITYCONDUCTIVE FILAMENTShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of the metal contact and its connection with the activation process, four model systems are screened on halide perovskite memristors: Nearly inert metals (Au and Pt), low reactivity contacts (Cu), highly reactive contact (Ag and Al), and pre-oxidized metal in the form of AgI. It is revealed that the threshold voltage for activation of the memory effect is highly connected with the electrochemical activity of the metals. Redox/capacitive peaks are observed for reactive metals at positive potentials and charged ions are formed that can follow the electrical field. Activation proceeds by formation of conductive filaments, either by the direct migration of the charged metals or by an increase in the concentration of halide vacancies generated by this electrochemical reaction. Importantly, the use of pre-oxidized Ag+ ions leads to very low threshold voltages of ≈0.2 V indicating that an additional electrochemical reaction is not needed in this system to activate the memristor. Overall, the effect of the metal contact is clarified, and it is revealed that AgI is a very promising interfacial layer for low-energy applications.Fil: Pérez Martínez, José Carlos. Universitat Jaume I; EspañaFil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; EspañaFil: Salehpour, Saeed. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; EspañaFil: Bahari, Ali. University of Mazandaran; IránFil: Arredondo, Belén. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Guerrero, Antonio. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; EspañaWiley VCH Verlag2023-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/278355Pérez Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; et al.; Role of Metal Contacts on Halide Perovskite Memristors; Wiley VCH Verlag; Advanced Functional Materials; 33; 47; 7-2023; 1-81616-301XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1002/adfm.202305211info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-01-08T13:05:25Zoai:ri.conicet.gov.ar:11336/278355instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-01-08 13:05:25.296CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Role of Metal Contacts on Halide Perovskite Memristors
title Role of Metal Contacts on Halide Perovskite Memristors
spellingShingle Role of Metal Contacts on Halide Perovskite Memristors
Pérez Martínez, José Carlos
HALIDE PEROVSKITES
MEMRISTORS
ELECTROCHEMICAL ACTIVITY
CONDUCTIVE FILAMENTS
title_short Role of Metal Contacts on Halide Perovskite Memristors
title_full Role of Metal Contacts on Halide Perovskite Memristors
title_fullStr Role of Metal Contacts on Halide Perovskite Memristors
title_full_unstemmed Role of Metal Contacts on Halide Perovskite Memristors
title_sort Role of Metal Contacts on Halide Perovskite Memristors
dc.creator.none.fl_str_mv Pérez Martínez, José Carlos
Berruet, Mariana
Gonzales, Cedric
Salehpour, Saeed
Bahari, Ali
Arredondo, Belén
Guerrero, Antonio
author Pérez Martínez, José Carlos
author_facet Pérez Martínez, José Carlos
Berruet, Mariana
Gonzales, Cedric
Salehpour, Saeed
Bahari, Ali
Arredondo, Belén
Guerrero, Antonio
author_role author
author2 Berruet, Mariana
Gonzales, Cedric
Salehpour, Saeed
Bahari, Ali
Arredondo, Belén
Guerrero, Antonio
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv HALIDE PEROVSKITES
MEMRISTORS
ELECTROCHEMICAL ACTIVITY
CONDUCTIVE FILAMENTS
topic HALIDE PEROVSKITES
MEMRISTORS
ELECTROCHEMICAL ACTIVITY
CONDUCTIVE FILAMENTS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of the metal contact and its connection with the activation process, four model systems are screened on halide perovskite memristors: Nearly inert metals (Au and Pt), low reactivity contacts (Cu), highly reactive contact (Ag and Al), and pre-oxidized metal in the form of AgI. It is revealed that the threshold voltage for activation of the memory effect is highly connected with the electrochemical activity of the metals. Redox/capacitive peaks are observed for reactive metals at positive potentials and charged ions are formed that can follow the electrical field. Activation proceeds by formation of conductive filaments, either by the direct migration of the charged metals or by an increase in the concentration of halide vacancies generated by this electrochemical reaction. Importantly, the use of pre-oxidized Ag+ ions leads to very low threshold voltages of ≈0.2 V indicating that an additional electrochemical reaction is not needed in this system to activate the memristor. Overall, the effect of the metal contact is clarified, and it is revealed that AgI is a very promising interfacial layer for low-energy applications.
Fil: Pérez Martínez, José Carlos. Universitat Jaume I; España
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Salehpour, Saeed. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Bahari, Ali. University of Mazandaran; Irán
Fil: Arredondo, Belén. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Guerrero, Antonio. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
description Halide perovskites are promising candidates for resistive memories (memristors) due to their mixed electronic/ionic conductivity and the real activation mechanism is currently under debate. In order to unveil the role of the metal contact and its connection with the activation process, four model systems are screened on halide perovskite memristors: Nearly inert metals (Au and Pt), low reactivity contacts (Cu), highly reactive contact (Ag and Al), and pre-oxidized metal in the form of AgI. It is revealed that the threshold voltage for activation of the memory effect is highly connected with the electrochemical activity of the metals. Redox/capacitive peaks are observed for reactive metals at positive potentials and charged ions are formed that can follow the electrical field. Activation proceeds by formation of conductive filaments, either by the direct migration of the charged metals or by an increase in the concentration of halide vacancies generated by this electrochemical reaction. Importantly, the use of pre-oxidized Ag+ ions leads to very low threshold voltages of ≈0.2 V indicating that an additional electrochemical reaction is not needed in this system to activate the memristor. Overall, the effect of the metal contact is clarified, and it is revealed that AgI is a very promising interfacial layer for low-energy applications.
publishDate 2023
dc.date.none.fl_str_mv 2023-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/278355
Pérez Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; et al.; Role of Metal Contacts on Halide Perovskite Memristors; Wiley VCH Verlag; Advanced Functional Materials; 33; 47; 7-2023; 1-8
1616-301X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/278355
identifier_str_mv Pérez Martínez, José Carlos; Berruet, Mariana; Gonzales, Cedric; Salehpour, Saeed; Bahari, Ali; et al.; Role of Metal Contacts on Halide Perovskite Memristors; Wiley VCH Verlag; Advanced Functional Materials; 33; 47; 7-2023; 1-8
1616-301X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/adfm.202305211
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley VCH Verlag
publisher.none.fl_str_mv Wiley VCH Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.747614

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