Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors

Autores
Berruet, Mariana; Pérez Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al Mayouf, Abdullah M.; Guerrero, Antonio; Bisquert, Juan
Año de publicación
2022
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current-voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Pérez Martínez, José Carlos. Universitat Jaume I; España. Universidad Rey Juan Carlos; España
Fil: Romero, Beatriz. Universidad Rey Juan Carlos; España
Fil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Al Mayouf, Abdullah M.. King Saud University; Arabia Saudita
Fil: Guerrero, Antonio. Universitat Jaume I; España
Fil: Bisquert, Juan. Universitat Jaume I; España. Yonsei University; Corea del Sur
Materia
MEMRISTOR
HALIDE PEROVSKITE
PHYSICAL MODEL
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/212593
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite MemristorsBerruet, MarianaPérez Martínez, José CarlosRomero, BeatrizGonzales, CedricAl Mayouf, Abdullah M.Guerrero, AntonioBisquert, JuanMEMRISTORHALIDE PEROVSKITEPHYSICAL MODELhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current-voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Pérez Martínez, José Carlos. Universitat Jaume I; España. Universidad Rey Juan Carlos; EspañaFil: Romero, Beatriz. Universidad Rey Juan Carlos; EspañaFil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; EspañaFil: Al Mayouf, Abdullah M.. King Saud University; Arabia SauditaFil: Guerrero, Antonio. Universitat Jaume I; EspañaFil: Bisquert, Juan. Universitat Jaume I; España. Yonsei University; Corea del SurAmerican Chemical Society2022-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/212593Berruet, Mariana; Pérez Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al Mayouf, Abdullah M.; et al.; Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors; American Chemical Society; ACS Energy Letters; 7; 3; 3-2022; 1214-12222380-81952380-8195CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsenergylett.2c00121info:eu-repo/semantics/altIdentifier/doi/10.1021/acsenergylett.2c00121info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:09:47Zoai:ri.conicet.gov.ar:11336/212593instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:09:48.076CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
title Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
spellingShingle Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
Berruet, Mariana
MEMRISTOR
HALIDE PEROVSKITE
PHYSICAL MODEL
title_short Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
title_full Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
title_fullStr Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
title_full_unstemmed Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
title_sort Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors
dc.creator.none.fl_str_mv Berruet, Mariana
Pérez Martínez, José Carlos
Romero, Beatriz
Gonzales, Cedric
Al Mayouf, Abdullah M.
Guerrero, Antonio
Bisquert, Juan
author Berruet, Mariana
author_facet Berruet, Mariana
Pérez Martínez, José Carlos
Romero, Beatriz
Gonzales, Cedric
Al Mayouf, Abdullah M.
Guerrero, Antonio
Bisquert, Juan
author_role author
author2 Pérez Martínez, José Carlos
Romero, Beatriz
Gonzales, Cedric
Al Mayouf, Abdullah M.
Guerrero, Antonio
Bisquert, Juan
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv MEMRISTOR
HALIDE PEROVSKITE
PHYSICAL MODEL
topic MEMRISTOR
HALIDE PEROVSKITE
PHYSICAL MODEL
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current-voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Pérez Martínez, José Carlos. Universitat Jaume I; España. Universidad Rey Juan Carlos; España
Fil: Romero, Beatriz. Universidad Rey Juan Carlos; España
Fil: Gonzales, Cedric. Universitat Jaume I. Instituto de Investigación de Materiales Avanzados.; España
Fil: Al Mayouf, Abdullah M.. King Saud University; Arabia Saudita
Fil: Guerrero, Antonio. Universitat Jaume I; España
Fil: Bisquert, Juan. Universitat Jaume I; España. Yonsei University; Corea del Sur
description An investigation of the kinetic behavior of MAPbI3 memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current-voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.
publishDate 2022
dc.date.none.fl_str_mv 2022-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/212593
Berruet, Mariana; Pérez Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al Mayouf, Abdullah M.; et al.; Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors; American Chemical Society; ACS Energy Letters; 7; 3; 3-2022; 1214-1222
2380-8195
2380-8195
CONICET Digital
CONICET
url http://hdl.handle.net/11336/212593
identifier_str_mv Berruet, Mariana; Pérez Martínez, José Carlos; Romero, Beatriz; Gonzales, Cedric; Al Mayouf, Abdullah M.; et al.; Physical Model for the Current-Voltage Hysteresis and Impedance of Halide Perovskite Memristors; American Chemical Society; ACS Energy Letters; 7; 3; 3-2022; 1214-1222
2380-8195
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsenergylett.2c00121
info:eu-repo/semantics/altIdentifier/doi/10.1021/acsenergylett.2c00121
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613980012675072
score 13.070432

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