Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn
- Autores
- Bilovol, Vitaliy; Fontana, Marcelo Raúl; Rocca, Javier Alejandro; Medina Chanduví, Hugo Harold; Mudarra Navarro, Azucena Marisol; Gil Rebaza, Arles Víctor; Errico, Leonardo Antonio; Liang, Akun; Errandonea, Daniel; Ureña, María Andrea
- Año de publicación
- 2020
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb₇₀Te₃₀ thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped SbeTe thin films of composition Snₓ[Sb₀.₇₀Te₀.₃₀]₁₀₀₋ₓ, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, associated to the glass-crystal transition, has been detected in all the samples within a narrow temperature range. The onset temperature of this transformation increases with the Sn content. Both as-obtained and thermally-treated films have been structurally characterized by X-ray and by Raman spectroscopy. We have compared the results among these compositions in terms of the identified crystallization products, transformation onset temperatures, transformation temperature ranges and amorphous/crystallized electrical resistance ratio. We have found that the frequency of the Raman modes decreases with Sndoping. Finally, in order to study the electronic structure and to determine the band gap, the frequencies of the allowed Raman modes and the vibration directions of the Sb₇₀Te₃₀ compound, Density Functional Theory based ab initio calculations have been performed as a function of the Sn concentration.
Facultad de Ciencias Exactas
Instituto de Física La Plata - Materia
-
Ciencias Exactas
Física
chalcogenide glasses
non-volatile memories
Raman spectroscopy
DFT - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- http://creativecommons.org/licenses/by/4.0/
- Repositorio
.jpg)
- Institución
- Universidad Nacional de La Plata
- OAI Identificador
- oai:sedici.unlp.edu.ar:10915/162206
Ver los metadatos del registro completo
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Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with SnBilovol, VitaliyFontana, Marcelo RaúlRocca, Javier AlejandroMedina Chanduví, Hugo HaroldMudarra Navarro, Azucena MarisolGil Rebaza, Arles VíctorErrico, Leonardo AntonioLiang, AkunErrandonea, DanielUreña, María AndreaCiencias ExactasFísicachalcogenide glassesnon-volatile memoriesRaman spectroscopyDFTAntimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb₇₀Te₃₀ thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped SbeTe thin films of composition Snₓ[Sb₀.₇₀Te₀.₃₀]₁₀₀₋ₓ, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, associated to the glass-crystal transition, has been detected in all the samples within a narrow temperature range. The onset temperature of this transformation increases with the Sn content. Both as-obtained and thermally-treated films have been structurally characterized by X-ray and by Raman spectroscopy. We have compared the results among these compositions in terms of the identified crystallization products, transformation onset temperatures, transformation temperature ranges and amorphous/crystallized electrical resistance ratio. We have found that the frequency of the Raman modes decreases with Sndoping. Finally, in order to study the electronic structure and to determine the band gap, the frequencies of the allowed Raman modes and the vibration directions of the Sb₇₀Te₃₀ compound, Density Functional Theory based ab initio calculations have been performed as a function of the Sn concentration.Facultad de Ciencias ExactasInstituto de Física La Plata2020info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArticulohttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttp://sedici.unlp.edu.ar/handle/10915/162206enginfo:eu-repo/semantics/altIdentifier/issn/0925-8388info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2020.156307info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/4.0/Creative Commons Attribution 4.0 International (CC BY 4.0)reponame:SEDICI (UNLP)instname:Universidad Nacional de La Platainstacron:UNLP2025-09-29T11:42:36Zoai:sedici.unlp.edu.ar:10915/162206Institucionalhttp://sedici.unlp.edu.ar/Universidad públicaNo correspondehttp://sedici.unlp.edu.ar/oai/snrdalira@sedici.unlp.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:13292025-09-29 11:42:37.183SEDICI (UNLP) - Universidad Nacional de La Platafalse |
| dc.title.none.fl_str_mv |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| title |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| spellingShingle |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn Bilovol, Vitaliy Ciencias Exactas Física chalcogenide glasses non-volatile memories Raman spectroscopy DFT |
| title_short |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| title_full |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| title_fullStr |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| title_full_unstemmed |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| title_sort |
Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb₇₀Te₃₀ doped with Sn |
| dc.creator.none.fl_str_mv |
Bilovol, Vitaliy Fontana, Marcelo Raúl Rocca, Javier Alejandro Medina Chanduví, Hugo Harold Mudarra Navarro, Azucena Marisol Gil Rebaza, Arles Víctor Errico, Leonardo Antonio Liang, Akun Errandonea, Daniel Ureña, María Andrea |
| author |
Bilovol, Vitaliy |
| author_facet |
Bilovol, Vitaliy Fontana, Marcelo Raúl Rocca, Javier Alejandro Medina Chanduví, Hugo Harold Mudarra Navarro, Azucena Marisol Gil Rebaza, Arles Víctor Errico, Leonardo Antonio Liang, Akun Errandonea, Daniel Ureña, María Andrea |
| author_role |
author |
| author2 |
Fontana, Marcelo Raúl Rocca, Javier Alejandro Medina Chanduví, Hugo Harold Mudarra Navarro, Azucena Marisol Gil Rebaza, Arles Víctor Errico, Leonardo Antonio Liang, Akun Errandonea, Daniel Ureña, María Andrea |
| author2_role |
author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Ciencias Exactas Física chalcogenide glasses non-volatile memories Raman spectroscopy DFT |
| topic |
Ciencias Exactas Física chalcogenide glasses non-volatile memories Raman spectroscopy DFT |
| dc.description.none.fl_txt_mv |
Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb₇₀Te₃₀ thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped SbeTe thin films of composition Snₓ[Sb₀.₇₀Te₀.₃₀]₁₀₀₋ₓ, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, associated to the glass-crystal transition, has been detected in all the samples within a narrow temperature range. The onset temperature of this transformation increases with the Sn content. Both as-obtained and thermally-treated films have been structurally characterized by X-ray and by Raman spectroscopy. We have compared the results among these compositions in terms of the identified crystallization products, transformation onset temperatures, transformation temperature ranges and amorphous/crystallized electrical resistance ratio. We have found that the frequency of the Raman modes decreases with Sndoping. Finally, in order to study the electronic structure and to determine the band gap, the frequencies of the allowed Raman modes and the vibration directions of the Sb₇₀Te₃₀ compound, Density Functional Theory based ab initio calculations have been performed as a function of the Sn concentration. Facultad de Ciencias Exactas Instituto de Física La Plata |
| description |
Antimony-telluride based phase-change materials doped with Sn have been proposed to be ideal materials for improving the performance of phase-change memories. It is well known that Sb₇₀Te₃₀ thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating. Therefore, it is interesting to study the effect of adding Sn into this composition. In this work, undoped and Sn-doped SbeTe thin films of composition Snₓ[Sb₀.₇₀Te₀.₃₀]₁₀₀₋ₓ, with x = 0.0, 2.5, 5.0 and 7.5 at. %, have been obtained by pulsed laser deposition. Their electrical resistance has been measured while heating from room temperature to 650 K. A sharp fall in the electrical resistance, associated to the glass-crystal transition, has been detected in all the samples within a narrow temperature range. The onset temperature of this transformation increases with the Sn content. Both as-obtained and thermally-treated films have been structurally characterized by X-ray and by Raman spectroscopy. We have compared the results among these compositions in terms of the identified crystallization products, transformation onset temperatures, transformation temperature ranges and amorphous/crystallized electrical resistance ratio. We have found that the frequency of the Raman modes decreases with Sndoping. Finally, in order to study the electronic structure and to determine the band gap, the frequencies of the allowed Raman modes and the vibration directions of the Sb₇₀Te₃₀ compound, Density Functional Theory based ab initio calculations have been performed as a function of the Sn concentration. |
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2020 |
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2020 |
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