Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter

Autores
Sambuco Salomone, Lucas Ignacio; Holmes Siedle, A.; Faigon, Adrián Néstor
Año de publicación
2016
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiation-induced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the main physical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasi-steady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.
Fil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina
Fil: Holmes Siedle, A.. REM Oxford; Reino Unido
Fil: Faigon, Adrián Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina
Materia
Mosfets
Radiation Effects
Solid State Detectors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/47237
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS DosimeterSambuco Salomone, Lucas IgnacioHolmes Siedle, A.Faigon, Adrián NéstorMosfetsRadiation EffectsSolid State Detectorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiation-induced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the main physical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasi-steady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.Fil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; ArgentinaFil: Holmes Siedle, A.. REM Oxford; Reino UnidoFil: Faigon, Adrián Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; ArgentinaInstitute of Electrical and Electronics Engineers2016-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/47237Sambuco Salomone, Lucas Ignacio; Holmes Siedle, A.; Faigon, Adrián Néstor; Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 6; 12-2016; 2997-30020018-94991558-1578CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2016.2626273info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/7738582/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:35:32Zoai:ri.conicet.gov.ar:11336/47237instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:35:32.278CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
title Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
spellingShingle Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
Sambuco Salomone, Lucas Ignacio
Mosfets
Radiation Effects
Solid State Detectors
title_short Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
title_full Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
title_fullStr Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
title_full_unstemmed Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
title_sort Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter
dc.creator.none.fl_str_mv Sambuco Salomone, Lucas Ignacio
Holmes Siedle, A.
Faigon, Adrián Néstor
author Sambuco Salomone, Lucas Ignacio
author_facet Sambuco Salomone, Lucas Ignacio
Holmes Siedle, A.
Faigon, Adrián Néstor
author_role author
author2 Holmes Siedle, A.
Faigon, Adrián Néstor
author2_role author
author
dc.subject.none.fl_str_mv Mosfets
Radiation Effects
Solid State Detectors
topic Mosfets
Radiation Effects
Solid State Detectors
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiation-induced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the main physical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasi-steady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.
Fil: Sambuco Salomone, Lucas Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina
Fil: Holmes Siedle, A.. REM Oxford; Reino Unido
Fil: Faigon, Adrián Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long". Universidad de Buenos Aires. Facultad de Ingeniería. Instituto de Tecnologías y Ciencias de la Ingeniería "Hilario Fernández Long"; Argentina
description Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. The response of the REM RFT300 RADFET dosimeter during bias cycled measurements shows a slow shift of the quasi-steady state threshold voltage value during radiation-induced charge neutralization. This phenomenon was previously explained as due to the presence of border traps. In this work, a recently developed numerical model which included the main physical processes leading to hole trapping and neutralization in MOS oxides was used to reproduce this experiment. The application of the model shows that the slow shift of the quasi-steady state threshold voltage during neutralization stages is a consequence of the spatial redistribution of trapped charge within the oxide. The effect this phenomenon has on MOS dosimetry is analyzed.
publishDate 2016
dc.date.none.fl_str_mv 2016-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/47237
Sambuco Salomone, Lucas Ignacio; Holmes Siedle, A.; Faigon, Adrián Néstor; Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 6; 12-2016; 2997-3002
0018-9499
1558-1578
CONICET Digital
CONICET
url http://hdl.handle.net/11336/47237
identifier_str_mv Sambuco Salomone, Lucas Ignacio; Holmes Siedle, A.; Faigon, Adrián Néstor; Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 63; 6; 12-2016; 2997-3002
0018-9499
1558-1578
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2016.2626273
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/7738582/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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