Retentivity of RRAM devices based on metal/YBCO interfaces

Autores
Schulman, Alejandro Raúl; Acha, Carlos Enrique
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon. Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K - 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure. © 2011 Materials Research Society.
Fil: Schulman, Alejandro Raúl. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Acha, Carlos Enrique. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Materia
Memoria
Retentividad
Interfaz
Electrónica de Óxidos
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/57199
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Retentivity of RRAM devices based on metal/YBCO interfacesSchulman, Alejandro RaúlAcha, Carlos EnriqueMemoriaRetentividadInterfazElectrónica de Óxidoshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon. Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K - 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure. © 2011 Materials Research Society.Fil: Schulman, Alejandro Raúl. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Acha, Carlos Enrique. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaCambridge University Press2011-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/57199Schulman, Alejandro Raúl; Acha, Carlos Enrique; Retentivity of RRAM devices based on metal/YBCO interfaces; Cambridge University Press; Mat. Res. Soc. Symp. Proc. (pittsburg); 1337; 5-2011; 103-1070272-9172CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8319799info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2011.987info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:51:02Zoai:ri.conicet.gov.ar:11336/57199instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:51:02.595CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Retentivity of RRAM devices based on metal/YBCO interfaces
title Retentivity of RRAM devices based on metal/YBCO interfaces
spellingShingle Retentivity of RRAM devices based on metal/YBCO interfaces
Schulman, Alejandro Raúl
Memoria
Retentividad
Interfaz
Electrónica de Óxidos
title_short Retentivity of RRAM devices based on metal/YBCO interfaces
title_full Retentivity of RRAM devices based on metal/YBCO interfaces
title_fullStr Retentivity of RRAM devices based on metal/YBCO interfaces
title_full_unstemmed Retentivity of RRAM devices based on metal/YBCO interfaces
title_sort Retentivity of RRAM devices based on metal/YBCO interfaces
dc.creator.none.fl_str_mv Schulman, Alejandro Raúl
Acha, Carlos Enrique
author Schulman, Alejandro Raúl
author_facet Schulman, Alejandro Raúl
Acha, Carlos Enrique
author_role author
author2 Acha, Carlos Enrique
author2_role author
dc.subject.none.fl_str_mv Memoria
Retentividad
Interfaz
Electrónica de Óxidos
topic Memoria
Retentividad
Interfaz
Electrónica de Óxidos
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon. Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K - 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure. © 2011 Materials Research Society.
Fil: Schulman, Alejandro Raúl. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Acha, Carlos Enrique. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Física de Bajas Temperaturas; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
description The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon. Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K - 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure. © 2011 Materials Research Society.
publishDate 2011
dc.date.none.fl_str_mv 2011-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/57199
Schulman, Alejandro Raúl; Acha, Carlos Enrique; Retentivity of RRAM devices based on metal/YBCO interfaces; Cambridge University Press; Mat. Res. Soc. Symp. Proc. (pittsburg); 1337; 5-2011; 103-107
0272-9172
CONICET Digital
CONICET
url http://hdl.handle.net/11336/57199
identifier_str_mv Schulman, Alejandro Raúl; Acha, Carlos Enrique; Retentivity of RRAM devices based on metal/YBCO interfaces; Cambridge University Press; Mat. Res. Soc. Symp. Proc. (pittsburg); 1337; 5-2011; 103-107
0272-9172
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8319799
info:eu-repo/semantics/altIdentifier/doi/10.1557/opl.2011.987
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Cambridge University Press
publisher.none.fl_str_mv Cambridge University Press
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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