Tuning the resistive switching properties of TiO2-x films

Autores
Ghenzi, Néstor; Rozenberg, M.J.; Llopis, R.; Levy, Pablo Eduardo; Hueso, Luis E.; Stoliar, Pablo Alberto
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
Fil: Ghenzi, Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; España
Fil: Rozenberg, M.J.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Université Paris Sud; Francia
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Hueso, Luis E.. Universidad del País Vasco; España. Fundación Vasca para la Ciencia; España
Fil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; España
Materia
Memory devices
RRAM
Memristors
Oxides
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/38478
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Tuning the resistive switching properties of TiO2-x filmsGhenzi, NéstorRozenberg, M.J.Llopis, R.Levy, Pablo EduardoHueso, Luis E.Stoliar, Pablo AlbertoMemory devicesRRAMMemristorsOxideshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.Fil: Ghenzi, Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; EspañaFil: Rozenberg, M.J.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Université Paris Sud; FranciaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Hueso, Luis E.. Universidad del País Vasco; España. Fundación Vasca para la Ciencia; EspañaFil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; EspañaAmerican Institute of Physics2015-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/38478Ghenzi, Néstor; Rozenberg, M.J.; Llopis, R.; Levy, Pablo Eduardo; Hueso, Luis E.; et al.; Tuning the resistive switching properties of TiO2-x films; American Institute of Physics; Applied Physics Letters; 106; 12; 3-2015; 1-40003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4916516info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4916516info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:50:06Zoai:ri.conicet.gov.ar:11336/38478instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:50:06.643CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Tuning the resistive switching properties of TiO2-x films
title Tuning the resistive switching properties of TiO2-x films
spellingShingle Tuning the resistive switching properties of TiO2-x films
Ghenzi, Néstor
Memory devices
RRAM
Memristors
Oxides
title_short Tuning the resistive switching properties of TiO2-x films
title_full Tuning the resistive switching properties of TiO2-x films
title_fullStr Tuning the resistive switching properties of TiO2-x films
title_full_unstemmed Tuning the resistive switching properties of TiO2-x films
title_sort Tuning the resistive switching properties of TiO2-x films
dc.creator.none.fl_str_mv Ghenzi, Néstor
Rozenberg, M.J.
Llopis, R.
Levy, Pablo Eduardo
Hueso, Luis E.
Stoliar, Pablo Alberto
author Ghenzi, Néstor
author_facet Ghenzi, Néstor
Rozenberg, M.J.
Llopis, R.
Levy, Pablo Eduardo
Hueso, Luis E.
Stoliar, Pablo Alberto
author_role author
author2 Rozenberg, M.J.
Llopis, R.
Levy, Pablo Eduardo
Hueso, Luis E.
Stoliar, Pablo Alberto
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Memory devices
RRAM
Memristors
Oxides
topic Memory devices
RRAM
Memristors
Oxides
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
Fil: Ghenzi, Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; España
Fil: Rozenberg, M.J.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Université Paris Sud; Francia
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Hueso, Luis E.. Universidad del País Vasco; España. Fundación Vasca para la Ciencia; España
Fil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; España
description We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
publishDate 2015
dc.date.none.fl_str_mv 2015-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/38478
Ghenzi, Néstor; Rozenberg, M.J.; Llopis, R.; Levy, Pablo Eduardo; Hueso, Luis E.; et al.; Tuning the resistive switching properties of TiO2-x films; American Institute of Physics; Applied Physics Letters; 106; 12; 3-2015; 1-4
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/38478
identifier_str_mv Ghenzi, Néstor; Rozenberg, M.J.; Llopis, R.; Levy, Pablo Eduardo; Hueso, Luis E.; et al.; Tuning the resistive switching properties of TiO2-x films; American Institute of Physics; Applied Physics Letters; 106; 12; 3-2015; 1-4
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4916516
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4916516
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846083024886693888
score 13.22299

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