Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy

Autores
Ravelli, L.; Macchi, Carlos Eugenio; Mariazzi, S.; Mazzoldi, P.; Egger, W.; Hugenschmidt, C.; Somoza, Alberto Horacio; Brusa, R. S.
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Samples of amorphous silica were implanted with Au ions at an energy of 190 keV and fluences of 1×1014 ions cm−2and 5×1014 ions cm−2 at room temperature. The damage produced by ion implantation and its evolution with the thermal treatment at 800 °C for one hour in nitrogen atmosphere was depth profiled using three positron annihilation techniques: Doppler broadening spectroscopy, positron annihilation lifetime spectroscopy and coincidence Doppler broadening spectroscopy. Around the ion projected range of Rp = 67 nm, a size reduction of the silica matrix intrinsic nanovoids points out a local densification ofthe material. Oxygen related defects were found to be present at depths four times the ion projected range, showing a high mobility of oxygen molecules from the densified and stressed region towards the bulk. The 800 °C thermal treatment leads to a recovery of the silica intrinsic nanovoids only in the deeper damaged region and the defect distribution, probed by positrons, shrinks around the ion projected range where the Au atoms aggregate. Open volume defects at the interface between Au and the amorphous matrix were evidenced in both the asimplanted and in the thermal treated samples. A practically complete disappearance of the intrinsic nanovoids was observed around Rp when the implantation fluence was increased by two orders of magnitude (3×1016 ions cm−2). In this case, the oxygen defects move to a depth five times larger than Rp.
Fil: Ravelli, L.. Universitá di Trento. Dipartamento di Fisica; Italia
Fil: Macchi, Carlos Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones En Física E Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina
Fil: Mariazzi, S.. Stefan-Meyer-Institut für subatomare Physik; Austria
Fil: Mazzoldi, P.. Università di Padova. Dipartimento di Fisica; Italia
Fil: Egger, W.. Universität der Bunderswehr. Institut für Angewandte Physik und Messtechnik; Alemania
Fil: Hugenschmidt, C.. Technische Universität München. Physik Department; Alemania
Fil: Somoza, Alberto Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
Fil: Brusa, R. S.. Universitá di Trento. Dipartamento di Fisica; Italia
Materia
Glass
Amorphous Sio2
Au Implantation
Positrons
Positronium
Nanovoids
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/4604
Acceder
id CONICETDig_2a8eb956824051c1e9cce1ad851a9c2c
oai_identifier_str oai:ri.conicet.gov.ar:11336/4604
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopyRavelli, L.Macchi, Carlos EugenioMariazzi, S.Mazzoldi, P.Egger, W.Hugenschmidt, C.Somoza, Alberto HoracioBrusa, R. S.GlassAmorphous Sio2Au ImplantationPositronsPositroniumNanovoidshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Samples of amorphous silica were implanted with Au ions at an energy of 190 keV and fluences of 1×1014 ions cm−2and 5×1014 ions cm−2 at room temperature. The damage produced by ion implantation and its evolution with the thermal treatment at 800 °C for one hour in nitrogen atmosphere was depth profiled using three positron annihilation techniques: Doppler broadening spectroscopy, positron annihilation lifetime spectroscopy and coincidence Doppler broadening spectroscopy. Around the ion projected range of Rp = 67 nm, a size reduction of the silica matrix intrinsic nanovoids points out a local densification ofthe material. Oxygen related defects were found to be present at depths four times the ion projected range, showing a high mobility of oxygen molecules from the densified and stressed region towards the bulk. The 800 °C thermal treatment leads to a recovery of the silica intrinsic nanovoids only in the deeper damaged region and the defect distribution, probed by positrons, shrinks around the ion projected range where the Au atoms aggregate. Open volume defects at the interface between Au and the amorphous matrix were evidenced in both the asimplanted and in the thermal treated samples. A practically complete disappearance of the intrinsic nanovoids was observed around Rp when the implantation fluence was increased by two orders of magnitude (3×1016 ions cm−2). In this case, the oxygen defects move to a depth five times larger than Rp.Fil: Ravelli, L.. Universitá di Trento. Dipartamento di Fisica; ItaliaFil: Macchi, Carlos Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones En Física E Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; ArgentinaFil: Mariazzi, S.. Stefan-Meyer-Institut für subatomare Physik; AustriaFil: Mazzoldi, P.. Università di Padova. Dipartimento di Fisica; ItaliaFil: Egger, W.. Universität der Bunderswehr. Institut für Angewandte Physik und Messtechnik; AlemaniaFil: Hugenschmidt, C.. Technische Universität München. Physik Department; AlemaniaFil: Somoza, Alberto Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; ArgentinaFil: Brusa, R. S.. Universitá di Trento. Dipartamento di Fisica; ItaliaIOP Publishing2015-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/4604Ravelli, L.; Macchi, Carlos Eugenio; Mariazzi, S.; Mazzoldi, P.; Egger, W.; et al.; Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy; IOP Publishing; Journal Of Physics D: Applied Physics; 48; 49; 11-2015; 495302-4953020022-3727enginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/48/49/495302/metainfo:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/48/49/495302info:eu-repo/semantics/altIdentifier/issn/0022-3727info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T10:10:57Zoai:ri.conicet.gov.ar:11336/4604instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 10:10:57.547CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
title Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
spellingShingle Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
Ravelli, L.
Glass
Amorphous Sio2
Au Implantation
Positrons
Positronium
Nanovoids
title_short Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
title_full Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
title_fullStr Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
title_full_unstemmed Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
title_sort Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy
dc.creator.none.fl_str_mv Ravelli, L.
Macchi, Carlos Eugenio
Mariazzi, S.
Mazzoldi, P.
Egger, W.
Hugenschmidt, C.
Somoza, Alberto Horacio
Brusa, R. S.
author Ravelli, L.
author_facet Ravelli, L.
Macchi, Carlos Eugenio
Mariazzi, S.
Mazzoldi, P.
Egger, W.
Hugenschmidt, C.
Somoza, Alberto Horacio
Brusa, R. S.
author_role author
author2 Macchi, Carlos Eugenio
Mariazzi, S.
Mazzoldi, P.
Egger, W.
Hugenschmidt, C.
Somoza, Alberto Horacio
Brusa, R. S.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Glass
Amorphous Sio2
Au Implantation
Positrons
Positronium
Nanovoids
topic Glass
Amorphous Sio2
Au Implantation
Positrons
Positronium
Nanovoids
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Samples of amorphous silica were implanted with Au ions at an energy of 190 keV and fluences of 1×1014 ions cm−2and 5×1014 ions cm−2 at room temperature. The damage produced by ion implantation and its evolution with the thermal treatment at 800 °C for one hour in nitrogen atmosphere was depth profiled using three positron annihilation techniques: Doppler broadening spectroscopy, positron annihilation lifetime spectroscopy and coincidence Doppler broadening spectroscopy. Around the ion projected range of Rp = 67 nm, a size reduction of the silica matrix intrinsic nanovoids points out a local densification ofthe material. Oxygen related defects were found to be present at depths four times the ion projected range, showing a high mobility of oxygen molecules from the densified and stressed region towards the bulk. The 800 °C thermal treatment leads to a recovery of the silica intrinsic nanovoids only in the deeper damaged region and the defect distribution, probed by positrons, shrinks around the ion projected range where the Au atoms aggregate. Open volume defects at the interface between Au and the amorphous matrix were evidenced in both the asimplanted and in the thermal treated samples. A practically complete disappearance of the intrinsic nanovoids was observed around Rp when the implantation fluence was increased by two orders of magnitude (3×1016 ions cm−2). In this case, the oxygen defects move to a depth five times larger than Rp.
Fil: Ravelli, L.. Universitá di Trento. Dipartamento di Fisica; Italia
Fil: Macchi, Carlos Eugenio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones En Física E Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina
Fil: Mariazzi, S.. Stefan-Meyer-Institut für subatomare Physik; Austria
Fil: Mazzoldi, P.. Università di Padova. Dipartimento di Fisica; Italia
Fil: Egger, W.. Universität der Bunderswehr. Institut für Angewandte Physik und Messtechnik; Alemania
Fil: Hugenschmidt, C.. Technische Universität München. Physik Department; Alemania
Fil: Somoza, Alberto Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tandil. Centro de Investigaciones en Física e Ingeniería del Centro de la Provincia de Buenos Aires; Argentina. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Instituto de Física de Materiales; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
Fil: Brusa, R. S.. Universitá di Trento. Dipartamento di Fisica; Italia
description Samples of amorphous silica were implanted with Au ions at an energy of 190 keV and fluences of 1×1014 ions cm−2and 5×1014 ions cm−2 at room temperature. The damage produced by ion implantation and its evolution with the thermal treatment at 800 °C for one hour in nitrogen atmosphere was depth profiled using three positron annihilation techniques: Doppler broadening spectroscopy, positron annihilation lifetime spectroscopy and coincidence Doppler broadening spectroscopy. Around the ion projected range of Rp = 67 nm, a size reduction of the silica matrix intrinsic nanovoids points out a local densification ofthe material. Oxygen related defects were found to be present at depths four times the ion projected range, showing a high mobility of oxygen molecules from the densified and stressed region towards the bulk. The 800 °C thermal treatment leads to a recovery of the silica intrinsic nanovoids only in the deeper damaged region and the defect distribution, probed by positrons, shrinks around the ion projected range where the Au atoms aggregate. Open volume defects at the interface between Au and the amorphous matrix were evidenced in both the asimplanted and in the thermal treated samples. A practically complete disappearance of the intrinsic nanovoids was observed around Rp when the implantation fluence was increased by two orders of magnitude (3×1016 ions cm−2). In this case, the oxygen defects move to a depth five times larger than Rp.
publishDate 2015
dc.date.none.fl_str_mv 2015-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/4604
Ravelli, L.; Macchi, Carlos Eugenio; Mariazzi, S.; Mazzoldi, P.; Egger, W.; et al.; Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy; IOP Publishing; Journal Of Physics D: Applied Physics; 48; 49; 11-2015; 495302-495302
0022-3727
url http://hdl.handle.net/11336/4604
identifier_str_mv Ravelli, L.; Macchi, Carlos Eugenio; Mariazzi, S.; Mazzoldi, P.; Egger, W.; et al.; Interstitial oxygen related defects and nanovoids in Au implanted a-SiO2 glass depth profiled by positron annihilation spectroscopy; IOP Publishing; Journal Of Physics D: Applied Physics; 48; 49; 11-2015; 495302-495302
0022-3727
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/48/49/495302/meta
info:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/48/49/495302
info:eu-repo/semantics/altIdentifier/issn/0022-3727
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842270138877870080
score 13.13397

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