Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature

Autores
Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth
Año de publicación
2002
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region has not yet been established. In this work, n/p junctions were formed by Ar++ implantation on MCT (111) grown by the isothermal vapor phase epitaxy method. Structural damage after implantation for different implantation doses (10 13, 1014, 1015Ar++/cm2) was evaluated by transmission electron microscopy. At high doses, damage distribution exhibits a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone exhibited small dislocation loops. The observed n-type behavior after implantation was attributed to the generation and diffusion of Hg from the damaged region.
Fil: Aguirre, Myriam H.. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Walsoe, Noemi Elizabeth. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Materia
Tem
Implantation
Hgcdte
Defects
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82756
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperatureAguirre, Myriam H.Canepa, Horacio RicardoWalsoe, Noemi ElizabethTemImplantationHgcdteDefectshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region has not yet been established. In this work, n/p junctions were formed by Ar++ implantation on MCT (111) grown by the isothermal vapor phase epitaxy method. Structural damage after implantation for different implantation doses (10 13, 1014, 1015Ar++/cm2) was evaluated by transmission electron microscopy. At high doses, damage distribution exhibits a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone exhibited small dislocation loops. The observed n-type behavior after implantation was attributed to the generation and diffusion of Hg from the damaged region.Fil: Aguirre, Myriam H.. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaFil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaFil: Walsoe, Noemi Elizabeth. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaAmerican Institute of Physics2002-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82756Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature; American Institute of Physics; Journal of Applied Physics; 92; 10; 11-2002; 5745-57480021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.1512695info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.1512695info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:19:03Zoai:ri.conicet.gov.ar:11336/82756instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:19:03.553CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
title Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
spellingShingle Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
Aguirre, Myriam H.
Tem
Implantation
Hgcdte
Defects
title_short Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
title_full Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
title_fullStr Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
title_full_unstemmed Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
title_sort Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature
dc.creator.none.fl_str_mv Aguirre, Myriam H.
Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author Aguirre, Myriam H.
author_facet Aguirre, Myriam H.
Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author_role author
author2 Canepa, Horacio Ricardo
Walsoe, Noemi Elizabeth
author2_role author
author
dc.subject.none.fl_str_mv Tem
Implantation
Hgcdte
Defects
topic Tem
Implantation
Hgcdte
Defects
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region has not yet been established. In this work, n/p junctions were formed by Ar++ implantation on MCT (111) grown by the isothermal vapor phase epitaxy method. Structural damage after implantation for different implantation doses (10 13, 1014, 1015Ar++/cm2) was evaluated by transmission electron microscopy. At high doses, damage distribution exhibits a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone exhibited small dislocation loops. The observed n-type behavior after implantation was attributed to the generation and diffusion of Hg from the damaged region.
Fil: Aguirre, Myriam H.. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Walsoe, Noemi Elizabeth. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
description HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region has not yet been established. In this work, n/p junctions were formed by Ar++ implantation on MCT (111) grown by the isothermal vapor phase epitaxy method. Structural damage after implantation for different implantation doses (10 13, 1014, 1015Ar++/cm2) was evaluated by transmission electron microscopy. At high doses, damage distribution exhibits a double region of defects. These were mainly vacancy dislocation loops and lines in the first region, whereas the second zone exhibited small dislocation loops. The observed n-type behavior after implantation was attributed to the generation and diffusion of Hg from the damaged region.
publishDate 2002
dc.date.none.fl_str_mv 2002-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82756
Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature; American Institute of Physics; Journal of Applied Physics; 92; 10; 11-2002; 5745-5748
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82756
identifier_str_mv Aguirre, Myriam H.; Canepa, Horacio Ricardo; Walsoe, Noemi Elizabeth; Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature; American Institute of Physics; Journal of Applied Physics; 92; 10; 11-2002; 5745-5748
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.1512695
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.1512695
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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