Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM

Autores
Aguirre, M. H.; Canepa, Horacio Ricardo
Año de publicación
2001
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Mercury cadmium telluride alloys Hg1-xCdxTe (MCT) is an important semiconductor material used in infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT, a detailed understanding of the n-type behaviour of the unannealed damage region has not yet been established. In the present paper n on p junctions were formed by Ar++ implantation on MCT(1 1 0) grown by isothermal vapour phase epitaxy method (ISOVPE). Comparison of the structural damage after implantation is evaluated by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) measurements for different doses. Damage distribution presents two peaks and defects are primarily vacancy dislocation loops in the first region. The observed n-type behaviour after implantation is attributed to the generation and diffusion of Hg from the damage region.
Fil: Aguirre, M. H.. Universidad Complutense de Madrid; España
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. GP. CITEFA - Centro de Investigaciones Toxicológicas (I); Argentina
Materia
Defects
Dislocations
Hgcdte
Ion Implantation
Rbs
Tem
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82227
Acceder
id CONICETDig_4467b77f70915aa064e766d99ee02be3
oai_identifier_str oai:ri.conicet.gov.ar:11336/82227
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEMAguirre, M. H.Canepa, Horacio RicardoDefectsDislocationsHgcdteIon ImplantationRbsTemhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Mercury cadmium telluride alloys Hg1-xCdxTe (MCT) is an important semiconductor material used in infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT, a detailed understanding of the n-type behaviour of the unannealed damage region has not yet been established. In the present paper n on p junctions were formed by Ar++ implantation on MCT(1 1 0) grown by isothermal vapour phase epitaxy method (ISOVPE). Comparison of the structural damage after implantation is evaluated by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) measurements for different doses. Damage distribution presents two peaks and defects are primarily vacancy dislocation loops in the first region. The observed n-type behaviour after implantation is attributed to the generation and diffusion of Hg from the damage region.Fil: Aguirre, M. H.. Universidad Complutense de Madrid; EspañaFil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. GP. CITEFA - Centro de Investigaciones Toxicológicas (I); ArgentinaElsevier Science2001-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82227Aguirre, M. H.; Canepa, Horacio Ricardo; Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM; Elsevier Science; Beam Interactions with Materials and Atoms; 175-177; 4-2001; 274-2790168-583XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0168583X00006327info:eu-repo/semantics/altIdentifier/doi/10.1016/S0168-583X(00)00632-7info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:08:09Zoai:ri.conicet.gov.ar:11336/82227instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:08:10.264CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
title Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
spellingShingle Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
Aguirre, M. H.
Defects
Dislocations
Hgcdte
Ion Implantation
Rbs
Tem
title_short Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
title_full Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
title_fullStr Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
title_full_unstemmed Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
title_sort Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM
dc.creator.none.fl_str_mv Aguirre, M. H.
Canepa, Horacio Ricardo
author Aguirre, M. H.
author_facet Aguirre, M. H.
Canepa, Horacio Ricardo
author_role author
author2 Canepa, Horacio Ricardo
author2_role author
dc.subject.none.fl_str_mv Defects
Dislocations
Hgcdte
Ion Implantation
Rbs
Tem
topic Defects
Dislocations
Hgcdte
Ion Implantation
Rbs
Tem
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Mercury cadmium telluride alloys Hg1-xCdxTe (MCT) is an important semiconductor material used in infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT, a detailed understanding of the n-type behaviour of the unannealed damage region has not yet been established. In the present paper n on p junctions were formed by Ar++ implantation on MCT(1 1 0) grown by isothermal vapour phase epitaxy method (ISOVPE). Comparison of the structural damage after implantation is evaluated by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) measurements for different doses. Damage distribution presents two peaks and defects are primarily vacancy dislocation loops in the first region. The observed n-type behaviour after implantation is attributed to the generation and diffusion of Hg from the damage region.
Fil: Aguirre, M. H.. Universidad Complutense de Madrid; España
Fil: Canepa, Horacio Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. GP. CITEFA - Centro de Investigaciones Toxicológicas (I); Argentina
description Mercury cadmium telluride alloys Hg1-xCdxTe (MCT) is an important semiconductor material used in infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT, a detailed understanding of the n-type behaviour of the unannealed damage region has not yet been established. In the present paper n on p junctions were formed by Ar++ implantation on MCT(1 1 0) grown by isothermal vapour phase epitaxy method (ISOVPE). Comparison of the structural damage after implantation is evaluated by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM) measurements for different doses. Damage distribution presents two peaks and defects are primarily vacancy dislocation loops in the first region. The observed n-type behaviour after implantation is attributed to the generation and diffusion of Hg from the damage region.
publishDate 2001
dc.date.none.fl_str_mv 2001-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82227
Aguirre, M. H.; Canepa, Horacio Ricardo; Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM; Elsevier Science; Beam Interactions with Materials and Atoms; 175-177; 4-2001; 274-279
0168-583X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82227
identifier_str_mv Aguirre, M. H.; Canepa, Horacio Ricardo; Ar-implanted epitaxially grown HgCd Te: evaluation of structural damage by RBS and TEM; Elsevier Science; Beam Interactions with Materials and Atoms; 175-177; 4-2001; 274-279
0168-583X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0168583X00006327
info:eu-repo/semantics/altIdentifier/doi/10.1016/S0168-583X(00)00632-7
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842980381587931136
score 12.993085

Publicaciones similares