Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling

Autores
Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The Meyer-Neldel behavior reported for the emission probabilities of electrons and holes was included in our code, replacing the gap state capture cross sections of the Shockley-Read-Hall formalisms with capture cross sections containing an exponential function of the trap energy depth. The Meyer-Neldel energies for electrons and holes are the slopes of these exponentials. Our results indicate that emission probabilities of neutral states no deeper than approximately 0.45 eV and 0.37 eV from the conduction and valence band edges, respectively, can show a Meyer-Neldel behavior only, while on the other hand, its implementation in deeper gap states makes the replication of experimental J-V curves of p-i-n solar cells and detectors impossible. The Meyer-Neldel behavior can be included in all neutral capture cross sections of acceptor-like tail states without affecting the J-V characteristics, while it cannot be included in all capture cross sections of neutral donor-like tail states and/or defect states without predicting device performances below the experimental figures, that become even lower when it is also included in charged capture cross sections. The implementation of the anti Meyer-Neldel behavior at tail states gives rise to slightly better and reasonable device performances.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
Materia
Amorphous Silcon Thin Fiolm Devices
Meyer-Neldel Rule
Solar Cells
Optical Detectors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/9920

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network_name_str CONICET Digital (CONICET)
spelling Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modelingRubinelli, Francisco AlbertoRamirez Jimenez, HelenaAmorphous Silcon Thin Fiolm DevicesMeyer-Neldel RuleSolar CellsOptical Detectorshttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The Meyer-Neldel behavior reported for the emission probabilities of electrons and holes was included in our code, replacing the gap state capture cross sections of the Shockley-Read-Hall formalisms with capture cross sections containing an exponential function of the trap energy depth. The Meyer-Neldel energies for electrons and holes are the slopes of these exponentials. Our results indicate that emission probabilities of neutral states no deeper than approximately 0.45 eV and 0.37 eV from the conduction and valence band edges, respectively, can show a Meyer-Neldel behavior only, while on the other hand, its implementation in deeper gap states makes the replication of experimental J-V curves of p-i-n solar cells and detectors impossible. The Meyer-Neldel behavior can be included in all neutral capture cross sections of acceptor-like tail states without affecting the J-V characteristics, while it cannot be included in all capture cross sections of neutral donor-like tail states and/or defect states without predicting device performances below the experimental figures, that become even lower when it is also included in charged capture cross sections. The implementation of the anti Meyer-Neldel behavior at tail states gives rise to slightly better and reasonable device performances.Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); ArgentinaFil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaAmerican Institute Of Physics2015-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/9920Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling; American Institute Of Physics; Journal Of Applied Physics; 117; 10; 3-2015; 1045131-104513110021-8979enginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4914038info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:33:43Zoai:ri.conicet.gov.ar:11336/9920instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:33:43.424CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
title Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
spellingShingle Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
Rubinelli, Francisco Alberto
Amorphous Silcon Thin Fiolm Devices
Meyer-Neldel Rule
Solar Cells
Optical Detectors
title_short Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
title_full Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
title_fullStr Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
title_full_unstemmed Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
title_sort Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling
dc.creator.none.fl_str_mv Rubinelli, Francisco Alberto
Ramirez Jimenez, Helena
author Rubinelli, Francisco Alberto
author_facet Rubinelli, Francisco Alberto
Ramirez Jimenez, Helena
author_role author
author2 Ramirez Jimenez, Helena
author2_role author
dc.subject.none.fl_str_mv Amorphous Silcon Thin Fiolm Devices
Meyer-Neldel Rule
Solar Cells
Optical Detectors
topic Amorphous Silcon Thin Fiolm Devices
Meyer-Neldel Rule
Solar Cells
Optical Detectors
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The Meyer-Neldel behavior reported for the emission probabilities of electrons and holes was included in our code, replacing the gap state capture cross sections of the Shockley-Read-Hall formalisms with capture cross sections containing an exponential function of the trap energy depth. The Meyer-Neldel energies for electrons and holes are the slopes of these exponentials. Our results indicate that emission probabilities of neutral states no deeper than approximately 0.45 eV and 0.37 eV from the conduction and valence band edges, respectively, can show a Meyer-Neldel behavior only, while on the other hand, its implementation in deeper gap states makes the replication of experimental J-V curves of p-i-n solar cells and detectors impossible. The Meyer-Neldel behavior can be included in all neutral capture cross sections of acceptor-like tail states without affecting the J-V characteristics, while it cannot be included in all capture cross sections of neutral donor-like tail states and/or defect states without predicting device performances below the experimental figures, that become even lower when it is also included in charged capture cross sections. The implementation of the anti Meyer-Neldel behavior at tail states gives rise to slightly better and reasonable device performances.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
description The Meyer-Neldel behavior reported for the emission probabilities of electrons and holes was included in our code, replacing the gap state capture cross sections of the Shockley-Read-Hall formalisms with capture cross sections containing an exponential function of the trap energy depth. The Meyer-Neldel energies for electrons and holes are the slopes of these exponentials. Our results indicate that emission probabilities of neutral states no deeper than approximately 0.45 eV and 0.37 eV from the conduction and valence band edges, respectively, can show a Meyer-Neldel behavior only, while on the other hand, its implementation in deeper gap states makes the replication of experimental J-V curves of p-i-n solar cells and detectors impossible. The Meyer-Neldel behavior can be included in all neutral capture cross sections of acceptor-like tail states without affecting the J-V characteristics, while it cannot be included in all capture cross sections of neutral donor-like tail states and/or defect states without predicting device performances below the experimental figures, that become even lower when it is also included in charged capture cross sections. The implementation of the anti Meyer-Neldel behavior at tail states gives rise to slightly better and reasonable device performances.
publishDate 2015
dc.date.none.fl_str_mv 2015-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/9920
Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling; American Institute Of Physics; Journal Of Applied Physics; 117; 10; 3-2015; 1045131-10451311
0021-8979
url http://hdl.handle.net/11336/9920
identifier_str_mv Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Impact of implementing the Meyer-Neldel behavior of carrier emission pre-factors in solar cell and optical detector modeling; American Institute Of Physics; Journal Of Applied Physics; 117; 10; 3-2015; 1045131-10451311
0021-8979
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4914038
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute Of Physics
publisher.none.fl_str_mv American Institute Of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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