Sturiale, A. E., & Rubinelli, F. A. (2008). Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices. Web
Citación estilo ChicagoSturiale, Alejandro Ernesto, and Francisco Alberto Rubinelli. Evidences of the Defect Pool Model in the Dark J-V Characteristics of Hydrogenated Amorphous Silicon Based P-i-n Devices. 2008.
Cita MLASturiale, Alejandro Ernesto, and Francisco Alberto Rubinelli. Evidences of the Defect Pool Model in the Dark J-V Characteristics of Hydrogenated Amorphous Silicon Based P-i-n Devices. 2008.
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