Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
- Autores
- Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose
- Año de publicación
- 2020
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.
Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina - Materia
-
BAND BENDING
PHOTOCONDUCTIVITY
SEMICONDUCTORS - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/138599
Ver los metadatos del registro completo
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Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposureBridoux, GermanRuano Sandoval, Gustavo DanielFerreyra, Jorge MarioVillafuerte, Manuel JoseBAND BENDINGPHOTOCONDUCTIVITYSEMICONDUCTORShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaFil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaFil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaIOP Publishing2020-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/138599Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-50953-8984CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-648X/abc359info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-648X/abc359info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:45:17Zoai:ri.conicet.gov.ar:11336/138599instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:45:17.546CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
title |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
spellingShingle |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure Bridoux, German BAND BENDING PHOTOCONDUCTIVITY SEMICONDUCTORS |
title_short |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
title_full |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
title_fullStr |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
title_full_unstemmed |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
title_sort |
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure |
dc.creator.none.fl_str_mv |
Bridoux, German Ruano Sandoval, Gustavo Daniel Ferreyra, Jorge Mario Villafuerte, Manuel Jose |
author |
Bridoux, German |
author_facet |
Bridoux, German Ruano Sandoval, Gustavo Daniel Ferreyra, Jorge Mario Villafuerte, Manuel Jose |
author_role |
author |
author2 |
Ruano Sandoval, Gustavo Daniel Ferreyra, Jorge Mario Villafuerte, Manuel Jose |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
BAND BENDING PHOTOCONDUCTIVITY SEMICONDUCTORS |
topic |
BAND BENDING PHOTOCONDUCTIVITY SEMICONDUCTORS |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices. Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina Fil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina |
description |
A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-10 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/138599 Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-5 0953-8984 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/138599 |
identifier_str_mv |
Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-5 0953-8984 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-648X/abc359 info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-648X/abc359 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
IOP Publishing |
publisher.none.fl_str_mv |
IOP Publishing |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614492458057728 |
score |
13.070432 |