Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure

Autores
Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.
Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Materia
BAND BENDING
PHOTOCONDUCTIVITY
SEMICONDUCTORS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/138599
Acceder
id CONICETDig_607b2ea315d6d91bf5319f9a120e21c6
oai_identifier_str oai:ri.conicet.gov.ar:11336/138599
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposureBridoux, GermanRuano Sandoval, Gustavo DanielFerreyra, Jorge MarioVillafuerte, Manuel JoseBAND BENDINGPHOTOCONDUCTIVITYSEMICONDUCTORShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaFil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaFil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; ArgentinaIOP Publishing2020-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/138599Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-50953-8984CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-648X/abc359info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-648X/abc359info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:18:35Zoai:ri.conicet.gov.ar:11336/138599instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:18:35.852CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
title Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
spellingShingle Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
Bridoux, German
BAND BENDING
PHOTOCONDUCTIVITY
SEMICONDUCTORS
title_short Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
title_full Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
title_fullStr Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
title_full_unstemmed Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
title_sort Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
dc.creator.none.fl_str_mv Bridoux, German
Ruano Sandoval, Gustavo Daniel
Ferreyra, Jorge Mario
Villafuerte, Manuel Jose
author Bridoux, German
author_facet Bridoux, German
Ruano Sandoval, Gustavo Daniel
Ferreyra, Jorge Mario
Villafuerte, Manuel Jose
author_role author
author2 Ruano Sandoval, Gustavo Daniel
Ferreyra, Jorge Mario
Villafuerte, Manuel Jose
author2_role author
author
author
dc.subject.none.fl_str_mv BAND BENDING
PHOTOCONDUCTIVITY
SEMICONDUCTORS
topic BAND BENDING
PHOTOCONDUCTIVITY
SEMICONDUCTORS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.
Fil: Bridoux, German. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Ferreyra, Jorge Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Laboratorio de Física del Sólido; Argentina
description A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.
publishDate 2020
dc.date.none.fl_str_mv 2020-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/138599
Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-5
0953-8984
CONICET Digital
CONICET
url http://hdl.handle.net/11336/138599
identifier_str_mv Bridoux, German; Ruano Sandoval, Gustavo Daniel; Ferreyra, Jorge Mario; Villafuerte, Manuel Jose; Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure; IOP Publishing; Journal of Physics: Condensed Matter; 33; 4; 10-2020; 1-5
0953-8984
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-648X/abc359
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-648X/abc359
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782618149847040
score 12.982451

Publicaciones similares