Nanopatterning in a compact setup using table top extreme ultraviolet lasers

• Autores: Wachulak, P.W.; Capeluto, M.G.; Menoni, C.S.; Rocca, J.J.; Marconi, M.C.
• Año de publicación: 2008
• Idioma: inglés
• Tipo de recurso: artículo
• Fuente: Opto-electron. Rev. 2008;16(4):444-450
• Materia: EUV lasers; Interferometric lithography; Nanopatterning; Photoresist; Electron beam lithography; Extreme ultraviolet lithography; Interferometry; Nanotechnology; Photoresists; Polymethyl methacrylates; Capillary discharge lasers; EUV lasers; Extreme ultraviolet lasers; Full width half maximum; Hydrogen silsesquioxane; Interferometric lithography; Laboratory environment; NanoPatterning; Ultraviolet lasers
• Institución: Universidad Nacional de Buenos Aires. Facultad de Ciencias Exactas y Naturales

The recent development of table top extreme ultraviolet (EUV) lasers have enabled new applications that so far were restricted to the use of large facilities. These compact sources bring now to the laboratory environment the capabilities that will allow a broader application of techniques related to nanotechnology and nanofabrication. In this paper we review the advances in the utilization of EUV lasers in nanopatterning. In particular we show results of the nanopatterning using a table-top capillary discharge laser producing 0.12-mJ laser pulses with 1.2-ns time duration at a wavelength λ = 46.9 nm. The nanopatterning was realized by interferometric lithography using a Lloyd's mirror interferometer. Two standard photoresists were used in this work, polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ). Pillars with a full width half maximum (FWHM) diameter of 60 nm and holes with FWHM diameter of 130 nm were obtained over areas in excess of 500×500 μm2. © 2008 Versita Warsaw and Springer-Verlag Berlin Heidelberg.
Fil:Capeluto, M.G. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
Fil:Marconi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.