Roughening kinetics of chemical vapor deposited copper films on Si(100)

Autores
Vázquez, L.; Albella, J. M.; Salvarezza, Roberto Carlos; Arvia, Alejandro Jorge; Levy, R. A.; Perese, D.
Año de publicación
1996
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
Materia
Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by/4.0/
Repositorio
SEDICI (UNLP)
Institución
Universidad Nacional de La Plata
OAI Identificador
oai:sedici.unlp.edu.ar:10915/126508
Acceder
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oai_identifier_str oai:sedici.unlp.edu.ar:10915/126508
network_acronym_str SEDICI
repository_id_str 1329
network_name_str SEDICI (UNLP)
spelling Roughening kinetics of chemical vapor deposited copper films on Si(100)Vázquez, L.Albella, J. M.Salvarezza, Roberto CarlosArvia, Alejandro JorgeLevy, R. A.Perese, D.Ciencias ExactasQuímicacopper filmslow pressure chemical vapor depositionscanning tunneling microscopyThe roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas1996info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArticulohttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttp://sedici.unlp.edu.ar/handle/10915/126508enginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.115954info:eu-repo/semantics/altIdentifier/issn/0003-6951info:eu-repo/semantics/altIdentifier/issn/1077-3118info:eu-repo/semantics/altIdentifier/doi/10.1063/1.115954info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/4.0/Creative Commons Attribution 4.0 International (CC BY 4.0)reponame:SEDICI (UNLP)instname:Universidad Nacional de La Platainstacron:UNLP2025-09-03T11:02:34Zoai:sedici.unlp.edu.ar:10915/126508Institucionalhttp://sedici.unlp.edu.ar/Universidad públicaNo correspondehttp://sedici.unlp.edu.ar/oai/snrdalira@sedici.unlp.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:13292025-09-03 11:02:34.698SEDICI (UNLP) - Universidad Nacional de La Platafalse
dc.title.none.fl_str_mv Roughening kinetics of chemical vapor deposited copper films on Si(100)
title Roughening kinetics of chemical vapor deposited copper films on Si(100)
spellingShingle Roughening kinetics of chemical vapor deposited copper films on Si(100)
Vázquez, L.
Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
title_short Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_full Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_fullStr Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_full_unstemmed Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_sort Roughening kinetics of chemical vapor deposited copper films on Si(100)
dc.creator.none.fl_str_mv Vázquez, L.
Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
author Vázquez, L.
author_facet Vázquez, L.
Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
author_role author
author2 Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
topic Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
dc.description.none.fl_txt_mv The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
description The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
publishDate 1996
dc.date.none.fl_str_mv 1996
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Articulo
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://sedici.unlp.edu.ar/handle/10915/126508
url http://sedici.unlp.edu.ar/handle/10915/126508
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.115954
info:eu-repo/semantics/altIdentifier/issn/0003-6951
info:eu-repo/semantics/altIdentifier/issn/1077-3118
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.115954
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:SEDICI (UNLP)
instname:Universidad Nacional de La Plata
instacron:UNLP
reponame_str SEDICI (UNLP)
collection SEDICI (UNLP)
instname_str Universidad Nacional de La Plata
instacron_str UNLP
institution UNLP
repository.name.fl_str_mv SEDICI (UNLP) - Universidad Nacional de La Plata
repository.mail.fl_str_mv alira@sedici.unlp.edu.ar
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score 13.13397

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