Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets

Autores
Montoro, Luciano A.; Isaac, A; Giovanetti, Lisandro José; Requejo, Félix Gregorio; Ramirez, Antonio J.
Año de publicación
2011
Idioma
inglés
Tipo de recurso
documento de conferencia
Estado
versión publicada
Descripción
The knowledge of the crystal shape and of the CoSi2/Si interface is essential for the theoretical modeling of these systems because these features have important influence on the electronic behavior, in particular the Schottky barrier height. Here is presented a comprehensive high resolution transmission electron microscopy (HRTEM) investigation of buried CoSi2/Si nanostructures unconventionally obtained from a soft-chemistry method. In addition, the HRTEM images were studied by a strain state analysis method (GPA) [3] to calculate the 2D lattice distortion around the nanostructures. These results were compared with predictions as obtained by Finite Element Simulation (FE) to verify the induced 3D strain state.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
Materia
Ciencias Exactas
metal silicides
electrical resistance material
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by/4.0/
Repositorio
SEDICI (UNLP)
Institución
Universidad Nacional de La Plata
OAI Identificador
oai:sedici.unlp.edu.ar:10915/145125

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network_name_str SEDICI (UNLP)
spelling Interface and Structural Characterization of Buried CoSi2/Si(001) NanoplateletsMontoro, Luciano A.Isaac, AGiovanetti, Lisandro JoséRequejo, Félix GregorioRamirez, Antonio J.Ciencias Exactasmetal silicideselectrical resistance materialThe knowledge of the crystal shape and of the CoSi2/Si interface is essential for the theoretical modeling of these systems because these features have important influence on the electronic behavior, in particular the Schottky barrier height. Here is presented a comprehensive high resolution transmission electron microscopy (HRTEM) investigation of buried CoSi2/Si nanostructures unconventionally obtained from a soft-chemistry method. In addition, the HRTEM images were studied by a strain state analysis method (GPA) [3] to calculate the 2D lattice distortion around the nanostructures. These results were compared with predictions as obtained by Finite Element Simulation (FE) to verify the induced 3D strain state.Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas2011info:eu-repo/semantics/conferenceObjectinfo:eu-repo/semantics/publishedVersionResumenhttp://purl.org/coar/resource_type/c_5794info:ar-repo/semantics/documentoDeConferenciaapplication/pdf1326-1327http://sedici.unlp.edu.ar/handle/10915/145125enginfo:eu-repo/semantics/altIdentifier/issn/1431-9276info:eu-repo/semantics/altIdentifier/issn/1435-8115info:eu-repo/semantics/altIdentifier/doi/10.1017/s1431927611007501info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by/4.0/Creative Commons Attribution 4.0 International (CC BY 4.0)reponame:SEDICI (UNLP)instname:Universidad Nacional de La Platainstacron:UNLP2025-09-29T11:32:21Zoai:sedici.unlp.edu.ar:10915/145125Institucionalhttp://sedici.unlp.edu.ar/Universidad públicaNo correspondehttp://sedici.unlp.edu.ar/oai/snrdalira@sedici.unlp.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:13292025-09-29 11:32:22.03SEDICI (UNLP) - Universidad Nacional de La Platafalse
dc.title.none.fl_str_mv Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
title Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
spellingShingle Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
Montoro, Luciano A.
Ciencias Exactas
metal silicides
electrical resistance material
title_short Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
title_full Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
title_fullStr Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
title_full_unstemmed Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
title_sort Interface and Structural Characterization of Buried CoSi2/Si(001) Nanoplatelets
dc.creator.none.fl_str_mv Montoro, Luciano A.
Isaac, A
Giovanetti, Lisandro José
Requejo, Félix Gregorio
Ramirez, Antonio J.
author Montoro, Luciano A.
author_facet Montoro, Luciano A.
Isaac, A
Giovanetti, Lisandro José
Requejo, Félix Gregorio
Ramirez, Antonio J.
author_role author
author2 Isaac, A
Giovanetti, Lisandro José
Requejo, Félix Gregorio
Ramirez, Antonio J.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Ciencias Exactas
metal silicides
electrical resistance material
topic Ciencias Exactas
metal silicides
electrical resistance material
dc.description.none.fl_txt_mv The knowledge of the crystal shape and of the CoSi2/Si interface is essential for the theoretical modeling of these systems because these features have important influence on the electronic behavior, in particular the Schottky barrier height. Here is presented a comprehensive high resolution transmission electron microscopy (HRTEM) investigation of buried CoSi2/Si nanostructures unconventionally obtained from a soft-chemistry method. In addition, the HRTEM images were studied by a strain state analysis method (GPA) [3] to calculate the 2D lattice distortion around the nanostructures. These results were compared with predictions as obtained by Finite Element Simulation (FE) to verify the induced 3D strain state.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
description The knowledge of the crystal shape and of the CoSi2/Si interface is essential for the theoretical modeling of these systems because these features have important influence on the electronic behavior, in particular the Schottky barrier height. Here is presented a comprehensive high resolution transmission electron microscopy (HRTEM) investigation of buried CoSi2/Si nanostructures unconventionally obtained from a soft-chemistry method. In addition, the HRTEM images were studied by a strain state analysis method (GPA) [3] to calculate the 2D lattice distortion around the nanostructures. These results were compared with predictions as obtained by Finite Element Simulation (FE) to verify the induced 3D strain state.
publishDate 2011
dc.date.none.fl_str_mv 2011
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dc.identifier.none.fl_str_mv http://sedici.unlp.edu.ar/handle/10915/145125
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dc.language.none.fl_str_mv eng
language eng
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info:eu-repo/semantics/altIdentifier/issn/1435-8115
info:eu-repo/semantics/altIdentifier/doi/10.1017/s1431927611007501
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by/4.0/
Creative Commons Attribution 4.0 International (CC BY 4.0)
dc.format.none.fl_str_mv application/pdf
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