In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)

Autores
Costa, Daniel Da Silva; Huck Iriart, Cristian; Kellermann, Guinther; Giovanetti, Lisandro José; Craievich, Aldo F.; Requejo, Félix Gregorio
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
Materia
Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by-nc-sa/4.0/
Repositorio
SEDICI (UNLP)
Institución
Universidad Nacional de La Plata
OAI Identificador
oai:sedici.unlp.edu.ar:10915/99861
Acceder
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oai_identifier_str oai:sedici.unlp.edu.ar:10915/99861
network_acronym_str SEDICI
repository_id_str 1329
network_name_str SEDICI (UNLP)
spelling In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)Costa, Daniel Da SilvaHuck Iriart, CristianKellermann, GuintherGiovanetti, Lisandro JoséCraievich, Aldo F.Requejo, Félix GregorioFísicaNanoparticlesThin film growthThin film nucleationNucleationThis investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas2015-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionArticulohttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfhttp://sedici.unlp.edu.ar/handle/10915/99861enginfo:eu-repo/semantics/altIdentifier/url/https://ri.conicet.gov.ar/11336/48710info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4936377info:eu-repo/semantics/altIdentifier/issn/0003-6951info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4936377info:eu-repo/semantics/altIdentifier/hdl/11336/48710info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-sa/4.0/Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)reponame:SEDICI (UNLP)instname:Universidad Nacional de La Platainstacron:UNLP2025-09-29T11:20:05Zoai:sedici.unlp.edu.ar:10915/99861Institucionalhttp://sedici.unlp.edu.ar/Universidad públicaNo correspondehttp://sedici.unlp.edu.ar/oai/snrdalira@sedici.unlp.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:13292025-09-29 11:20:06.122SEDICI (UNLP) - Universidad Nacional de La Platafalse
dc.title.none.fl_str_mv In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
spellingShingle In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
Costa, Daniel Da Silva
Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
title_short In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_fullStr In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full_unstemmed In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_sort In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
dc.creator.none.fl_str_mv Costa, Daniel Da Silva
Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
author Costa, Daniel Da Silva
author_facet Costa, Daniel Da Silva
Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
author_role author
author2 Huck Iriart, Cristian
Kellermann, Guinther
Giovanetti, Lisandro José
Craievich, Aldo F.
Requejo, Félix Gregorio
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
topic Física
Nanoparticles
Thin film growth
Thin film nucleation
Nucleation
dc.description.none.fl_txt_mv This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
description This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
publishDate 2015
dc.date.none.fl_str_mv 2015-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Articulo
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://sedici.unlp.edu.ar/handle/10915/99861
url http://sedici.unlp.edu.ar/handle/10915/99861
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ri.conicet.gov.ar/11336/48710
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4936377
info:eu-repo/semantics/altIdentifier/issn/0003-6951
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4936377
info:eu-repo/semantics/altIdentifier/hdl/11336/48710
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-sa/4.0/
Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-sa/4.0/
Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0)
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:SEDICI (UNLP)
instname:Universidad Nacional de La Plata
instacron:UNLP
reponame_str SEDICI (UNLP)
collection SEDICI (UNLP)
instname_str Universidad Nacional de La Plata
instacron_str UNLP
institution UNLP
repository.name.fl_str_mv SEDICI (UNLP) - Universidad Nacional de La Plata
repository.mail.fl_str_mv alira@sedici.unlp.edu.ar
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score 13.070432

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