In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)

Autores
Costa, Daniel Da Silva; Huck Iriart, Cristián; Kellermann, Guinther; Giovanetti, Lisandro Jose; Craievich, Aldo F.; Requejo, Felix Gregorio
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
Fil: Costa, Daniel Da Silva. Universidade Federal do Paraná; Brasil
Fil: Huck Iriart, Cristián. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
Fil: Kellermann, Guinther. Universidade Federal do Paraná; Brasil
Fil: Giovanetti, Lisandro Jose. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
Fil: Craievich, Aldo F.. Universidade de Sao Paulo; Brasil
Fil: Requejo, Felix Gregorio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
Materia
nanoparticles
thin film growth
thin film nucleation
nucleation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/48710
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/48710
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)Costa, Daniel Da SilvaHuck Iriart, CristiánKellermann, GuintherGiovanetti, Lisandro JoseCraievich, Aldo F.Requejo, Felix Gregorionanoparticlesthin film growththin film nucleationnucleationhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.Fil: Costa, Daniel Da Silva. Universidade Federal do Paraná; BrasilFil: Huck Iriart, Cristián. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; ArgentinaFil: Kellermann, Guinther. Universidade Federal do Paraná; BrasilFil: Giovanetti, Lisandro Jose. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; ArgentinaFil: Craievich, Aldo F.. Universidade de Sao Paulo; BrasilFil: Requejo, Felix Gregorio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; ArgentinaAmerican Institute of Physics2015-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/48710Costa, Daniel Da Silva ; Huck Iriart, Cristián; Kellermann, Guinther; Giovanetti, Lisandro Jose; Craievich, Aldo F.; et al.; In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001); American Institute of Physics; Applied Physics Letters; 107; 22; 11-2015; 1-5; 2231010003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4936377info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4936377info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:32:35Zoai:ri.conicet.gov.ar:11336/48710instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:32:35.558CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
spellingShingle In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
Costa, Daniel Da Silva
nanoparticles
thin film growth
thin film nucleation
nucleation
title_short In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_fullStr In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_full_unstemmed In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
title_sort In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)
dc.creator.none.fl_str_mv Costa, Daniel Da Silva
Huck Iriart, Cristián
Kellermann, Guinther
Giovanetti, Lisandro Jose
Craievich, Aldo F.
Requejo, Felix Gregorio
author Costa, Daniel Da Silva
author_facet Costa, Daniel Da Silva
Huck Iriart, Cristián
Kellermann, Guinther
Giovanetti, Lisandro Jose
Craievich, Aldo F.
Requejo, Felix Gregorio
author_role author
author2 Huck Iriart, Cristián
Kellermann, Guinther
Giovanetti, Lisandro Jose
Craievich, Aldo F.
Requejo, Felix Gregorio
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv nanoparticles
thin film growth
thin film nucleation
nucleation
topic nanoparticles
thin film growth
thin film nucleation
nucleation
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
Fil: Costa, Daniel Da Silva. Universidade Federal do Paraná; Brasil
Fil: Huck Iriart, Cristián. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
Fil: Kellermann, Guinther. Universidade Federal do Paraná; Brasil
Fil: Giovanetti, Lisandro Jose. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
Fil: Craievich, Aldo F.. Universidade de Sao Paulo; Brasil
Fil: Requejo, Felix Gregorio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas; Argentina
description This investigation aims at studying-by in situ grazing-incidence small-angle x-ray scattering-the process of growth of hexagonal CoSi2 nanoplatelets endotaxially buried in a Si(001) wafer. The early formation of spherical Co nanoparticles with bimodal size distribution in the deposited silica thin film during a pretreatment at 500 °C and their subsequent growth at 700 °C were also characterized. Isothermal annealing at 700 °C promotes a drastic reduction in the number of the smallest Co nanoparticles and a continuous decrease in their volume fraction in the silica thin film. At the same time, Co atoms diffuse across the SiO2/Si(001) interface into the silicon wafer, react with Si, and build up thin hexagonal CoSi2 nanoplatelets, all of them with their main surfaces parallel to Si{111} crystallographic planes. The observed progressive growths in thickness and lateral size of the hexagonal CoSi2 nanoplatelets occur at the expense of the dissolution of the small Co nanoparticles that are formed during the pretreatment at 500 °C and become unstable at the annealing temperature (700 °C). The kinetics of growth of the volume fraction of hexagonal platelets is well described by the classical Avrami equation.
publishDate 2015
dc.date.none.fl_str_mv 2015-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/48710
Costa, Daniel Da Silva ; Huck Iriart, Cristián; Kellermann, Guinther; Giovanetti, Lisandro Jose; Craievich, Aldo F.; et al.; In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001); American Institute of Physics; Applied Physics Letters; 107; 22; 11-2015; 1-5; 223101
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/48710
identifier_str_mv Costa, Daniel Da Silva ; Huck Iriart, Cristián; Kellermann, Guinther; Giovanetti, Lisandro Jose; Craievich, Aldo F.; et al.; In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001); American Institute of Physics; Applied Physics Letters; 107; 22; 11-2015; 1-5; 223101
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4936377
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4936377
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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