Negative differential resistance in porous silicon devices at room temperature
- Autores
- Marín Ramírez, Oscar Alonso; Toranzos, Víctor José; Urteaga, Raúl; Comedi, David Mario; Koropecki, Roberto Román
- Año de publicación
- 2015
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina.
Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices. - Fuente
- Superlattices and Microstructures, 2015, vol. 79, p. 45–53
- Materia
-
Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- http://creativecommons.org/licenses/by-nc-nd/2.5/ar/
- Repositorio
- Institución
- Universidad Nacional del Nordeste
- OAI Identificador
- oai:repositorio.unne.edu.ar:123456789/56448
Ver los metadatos del registro completo
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Negative differential resistance in porous silicon devices at room temperatureMarín Ramírez, Oscar AlonsoToranzos, Víctor JoséUrteaga, RaúlComedi, David MarioKoropecki, Roberto RománNegative differential resistancePorous silicon devicesTelegraphic noiseCoulomb repulsionFil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina.Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina.Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.Elsevier Ltd.2015info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfp. 45–53application/pdfapplication/pdfMarín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036.http://repositorio.unne.edu.ar/handle/123456789/56448Superlattices and Microstructures, 2015, vol. 79, p. 45–53reponame:Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)instname:Universidad Nacional del Nordesteenghttp://dx.doi.org/10.1016/j.spmi.2014.12.019info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/2.5/ar/Atribución-NoComercial-SinDerivadas 2.5 Argentina2025-09-29T14:30:21Zoai:repositorio.unne.edu.ar:123456789/56448instacron:UNNEInstitucionalhttp://repositorio.unne.edu.ar/Universidad públicaNo correspondehttp://repositorio.unne.edu.ar/oaiososa@bib.unne.edu.ar;sergio.alegria@unne.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:48712025-09-29 14:30:22.328Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) - Universidad Nacional del Nordestefalse |
dc.title.none.fl_str_mv |
Negative differential resistance in porous silicon devices at room temperature |
title |
Negative differential resistance in porous silicon devices at room temperature |
spellingShingle |
Negative differential resistance in porous silicon devices at room temperature Marín Ramírez, Oscar Alonso Negative differential resistance Porous silicon devices Telegraphic noise Coulomb repulsion |
title_short |
Negative differential resistance in porous silicon devices at room temperature |
title_full |
Negative differential resistance in porous silicon devices at room temperature |
title_fullStr |
Negative differential resistance in porous silicon devices at room temperature |
title_full_unstemmed |
Negative differential resistance in porous silicon devices at room temperature |
title_sort |
Negative differential resistance in porous silicon devices at room temperature |
dc.creator.none.fl_str_mv |
Marín Ramírez, Oscar Alonso Toranzos, Víctor José Urteaga, Raúl Comedi, David Mario Koropecki, Roberto Román |
author |
Marín Ramírez, Oscar Alonso |
author_facet |
Marín Ramírez, Oscar Alonso Toranzos, Víctor José Urteaga, Raúl Comedi, David Mario Koropecki, Roberto Román |
author_role |
author |
author2 |
Toranzos, Víctor José Urteaga, Raúl Comedi, David Mario Koropecki, Roberto Román |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
Negative differential resistance Porous silicon devices Telegraphic noise Coulomb repulsion |
topic |
Negative differential resistance Porous silicon devices Telegraphic noise Coulomb repulsion |
dc.description.none.fl_txt_mv |
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina. Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina. Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina. Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina. Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina. Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina. We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices. |
description |
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
Marín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036. http://repositorio.unne.edu.ar/handle/123456789/56448 |
identifier_str_mv |
Marín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036. |
url |
http://repositorio.unne.edu.ar/handle/123456789/56448 |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
http://dx.doi.org/10.1016/j.spmi.2014.12.019 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/2.5/ar/ Atribución-NoComercial-SinDerivadas 2.5 Argentina |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
http://creativecommons.org/licenses/by-nc-nd/2.5/ar/ Atribución-NoComercial-SinDerivadas 2.5 Argentina |
dc.format.none.fl_str_mv |
application/pdf p. 45–53 application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Ltd. |
publisher.none.fl_str_mv |
Elsevier Ltd. |
dc.source.none.fl_str_mv |
Superlattices and Microstructures, 2015, vol. 79, p. 45–53 reponame:Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) instname:Universidad Nacional del Nordeste |
reponame_str |
Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) |
collection |
Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) |
instname_str |
Universidad Nacional del Nordeste |
repository.name.fl_str_mv |
Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) - Universidad Nacional del Nordeste |
repository.mail.fl_str_mv |
ososa@bib.unne.edu.ar;sergio.alegria@unne.edu.ar |
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1844621688331829248 |
score |
12.559606 |