Negative differential resistance in porous silicon devices at room temperature

Autores
Marín Ramírez, Oscar Alonso; Toranzos, Víctor José; Urteaga, Raúl; Comedi, David Mario; Koropecki, Roberto Román
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina.
Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
Fuente
Superlattices and Microstructures, 2015, vol. 79, p. 45–53
Materia
Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
Nivel de accesibilidad
acceso abierto
Condiciones de uso
http://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
Institución
Universidad Nacional del Nordeste
OAI Identificador
oai:repositorio.unne.edu.ar:123456789/56448
Acceder
id RIUNNE_521c1afc78bbdd0e31fcdf57ae35da45
oai_identifier_str oai:repositorio.unne.edu.ar:123456789/56448
network_acronym_str RIUNNE
repository_id_str 4871
network_name_str Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
spelling Negative differential resistance in porous silicon devices at room temperatureMarín Ramírez, Oscar AlonsoToranzos, Víctor JoséUrteaga, RaúlComedi, David MarioKoropecki, Roberto RománNegative differential resistancePorous silicon devicesTelegraphic noiseCoulomb repulsionFil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina.Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina.Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.Elsevier Ltd.2015info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfp. 45–53application/pdfapplication/pdfMarín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036.http://repositorio.unne.edu.ar/handle/123456789/56448Superlattices and Microstructures, 2015, vol. 79, p. 45–53reponame:Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)instname:Universidad Nacional del Nordesteenghttp://dx.doi.org/10.1016/j.spmi.2014.12.019info:eu-repo/semantics/openAccesshttp://creativecommons.org/licenses/by-nc-nd/2.5/ar/Atribución-NoComercial-SinDerivadas 2.5 Argentina2025-10-23T11:19:27Zoai:repositorio.unne.edu.ar:123456789/56448instacron:UNNEInstitucionalhttp://repositorio.unne.edu.ar/Universidad públicaNo correspondehttp://repositorio.unne.edu.ar/oaiososa@bib.unne.edu.ar;sergio.alegria@unne.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:48712025-10-23 11:19:28.073Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) - Universidad Nacional del Nordestefalse
dc.title.none.fl_str_mv Negative differential resistance in porous silicon devices at room temperature
title Negative differential resistance in porous silicon devices at room temperature
spellingShingle Negative differential resistance in porous silicon devices at room temperature
Marín Ramírez, Oscar Alonso
Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
title_short Negative differential resistance in porous silicon devices at room temperature
title_full Negative differential resistance in porous silicon devices at room temperature
title_fullStr Negative differential resistance in porous silicon devices at room temperature
title_full_unstemmed Negative differential resistance in porous silicon devices at room temperature
title_sort Negative differential resistance in porous silicon devices at room temperature
dc.creator.none.fl_str_mv Marín Ramírez, Oscar Alonso
Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
author Marín Ramírez, Oscar Alonso
author_facet Marín Ramírez, Oscar Alonso
Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
author_role author
author2 Toranzos, Víctor José
Urteaga, Raúl
Comedi, David Mario
Koropecki, Roberto Román
author2_role author
author
author
author
dc.subject.none.fl_str_mv Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
topic Negative differential resistance
Porous silicon devices
Telegraphic noise
Coulomb repulsion
dc.description.none.fl_txt_mv Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional del Litoral; Argentina.
Fil: Toranzos, Víctor José. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
Fil: Urteaga, Raúl. Universidad Nacional del Litoral; Argentina.
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
Fil: Koropecki, Roberto Román. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas y Naturales y Agrimensura; Argentina.
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
description Fil: Marín Ramírez, Oscar Alonso. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología; Argentina.
publishDate 2015
dc.date.none.fl_str_mv 2015
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv Marín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036.
http://repositorio.unne.edu.ar/handle/123456789/56448
identifier_str_mv Marín Ramírez, Oscar Alonso, et al., 2015. Negative differential resistance in porous silicon devices at room temperature. En: Superlattices and Microstructures, Ámsterdam: Elsevier Ltd.2015, vol. 79, p. 45–53. EISSN: 0749-6036.
url http://repositorio.unne.edu.ar/handle/123456789/56448
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv http://dx.doi.org/10.1016/j.spmi.2014.12.019
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
http://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Atribución-NoComercial-SinDerivadas 2.5 Argentina
eu_rights_str_mv openAccess
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Atribución-NoComercial-SinDerivadas 2.5 Argentina
dc.format.none.fl_str_mv application/pdf
p. 45–53
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Ltd.
publisher.none.fl_str_mv Elsevier Ltd.
dc.source.none.fl_str_mv Superlattices and Microstructures, 2015, vol. 79, p. 45–53
reponame:Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
instname:Universidad Nacional del Nordeste
reponame_str Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
collection Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE)
instname_str Universidad Nacional del Nordeste
repository.name.fl_str_mv Repositorio Institucional de la Universidad Nacional del Nordeste (UNNE) - Universidad Nacional del Nordeste
repository.mail.fl_str_mv ososa@bib.unne.edu.ar;sergio.alegria@unne.edu.ar
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score 12.982451

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