C60-based hot-electron magnetic tunnel transistor
- Autores
- Gobbi, M.; Bedoya Pinto, A.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, L. E.
- Año de publicación
- 2012
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- A C 60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C 60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics.
Fil: Gobbi, M.. No especifíca;
Fil: Bedoya Pinto, A.. No especifíca;
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. No especifíca;
Fil: Casanova, F.. No especifíca;
Fil: Hueso, L. E.. No especifíca; - Materia
-
fullerenes
hot carriers
hot electron transistors
magnetic sensors
magnetic tunnelling
semiconductor materials
semiconductor-metal boundaries
tunnel transistors - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/190051
Ver los metadatos del registro completo
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C60-based hot-electron magnetic tunnel transistorGobbi, M.Bedoya Pinto, A.Golmar, FedericoLlopis, R.Casanova, F.Hueso, L. E.fullereneshot carriershot electron transistorsmagnetic sensorsmagnetic tunnellingsemiconductor materialssemiconductor-metal boundariestunnel transistorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1A C 60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C 60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics.Fil: Gobbi, M.. No especifíca;Fil: Bedoya Pinto, A.. No especifíca;Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, R.. No especifíca;Fil: Casanova, F.. No especifíca;Fil: Hueso, L. E.. No especifíca;American Institute of Physics2012-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/190051Gobbi, M.; Bedoya Pinto, A.; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; C60-based hot-electron magnetic tunnel transistor; American Institute of Physics; Applied Physics Letters; 101; 10; 9-2012; 1-40003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4751030info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4751030info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:07:57Zoai:ri.conicet.gov.ar:11336/190051instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:07:57.82CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
C60-based hot-electron magnetic tunnel transistor |
| title |
C60-based hot-electron magnetic tunnel transistor |
| spellingShingle |
C60-based hot-electron magnetic tunnel transistor Gobbi, M. fullerenes hot carriers hot electron transistors magnetic sensors magnetic tunnelling semiconductor materials semiconductor-metal boundaries tunnel transistors |
| title_short |
C60-based hot-electron magnetic tunnel transistor |
| title_full |
C60-based hot-electron magnetic tunnel transistor |
| title_fullStr |
C60-based hot-electron magnetic tunnel transistor |
| title_full_unstemmed |
C60-based hot-electron magnetic tunnel transistor |
| title_sort |
C60-based hot-electron magnetic tunnel transistor |
| dc.creator.none.fl_str_mv |
Gobbi, M. Bedoya Pinto, A. Golmar, Federico Llopis, R. Casanova, F. Hueso, L. E. |
| author |
Gobbi, M. |
| author_facet |
Gobbi, M. Bedoya Pinto, A. Golmar, Federico Llopis, R. Casanova, F. Hueso, L. E. |
| author_role |
author |
| author2 |
Bedoya Pinto, A. Golmar, Federico Llopis, R. Casanova, F. Hueso, L. E. |
| author2_role |
author author author author author |
| dc.subject.none.fl_str_mv |
fullerenes hot carriers hot electron transistors magnetic sensors magnetic tunnelling semiconductor materials semiconductor-metal boundaries tunnel transistors |
| topic |
fullerenes hot carriers hot electron transistors magnetic sensors magnetic tunnelling semiconductor materials semiconductor-metal boundaries tunnel transistors |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
A C 60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C 60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics. Fil: Gobbi, M.. No especifíca; Fil: Bedoya Pinto, A.. No especifíca; Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Llopis, R.. No especifíca; Fil: Casanova, F.. No especifíca; Fil: Hueso, L. E.. No especifíca; |
| description |
A C 60-based magnetic tunnel transistor is presented. The device is based on the collection of spin-filtered hot-electrons at a metal/C 60 interface, and it allows an accurate measurement of the energy level alignment at such interface. A 89% change in the collected current under the application of a magnetic field demonstrates that these devices can be used as sensitive magnetic field sensors compatible with soft electronics. |
| publishDate |
2012 |
| dc.date.none.fl_str_mv |
2012-09 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/190051 Gobbi, M.; Bedoya Pinto, A.; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; C60-based hot-electron magnetic tunnel transistor; American Institute of Physics; Applied Physics Letters; 101; 10; 9-2012; 1-4 0003-6951 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/190051 |
| identifier_str_mv |
Gobbi, M.; Bedoya Pinto, A.; Golmar, Federico; Llopis, R.; Casanova, F.; et al.; C60-based hot-electron magnetic tunnel transistor; American Institute of Physics; Applied Physics Letters; 101; 10; 9-2012; 1-4 0003-6951 CONICET Digital CONICET |
| dc.language.none.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4751030 info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4751030 |
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info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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openAccess |
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https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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application/pdf application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
| publisher.none.fl_str_mv |
American Institute of Physics |
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reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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