Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy

Autores
Gobbi, M.; Pietrobon, L.; Atxabal, A.; Bedoya Pinto, A.; Sun, X.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, L. E.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.
Fil: Gobbi, M.. CIC nanoGUNE; España. Université de Strasbourg; Francia
Fil: Pietrobon, L.. CIC nanoGUNE; España
Fil: Atxabal, A.. CIC nanoGUNE; España
Fil: Bedoya Pinto, A.. CIC nanoGUNE; España
Fil: Sun, X.. CIC nanoGUNE; España
Fil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Hueso, L. E.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Materia
Metal/Molecular Semiconductor Interfaces
Fullerene
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/33679
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/33679
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopyGobbi, M.Pietrobon, L.Atxabal, A.Bedoya Pinto, A.Sun, X.Golmar, FedericoLlopis, R.Casanova, F.Hueso, L. E.Metal/Molecular Semiconductor InterfacesFullerenehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.Fil: Gobbi, M.. CIC nanoGUNE; España. Université de Strasbourg; FranciaFil: Pietrobon, L.. CIC nanoGUNE; EspañaFil: Atxabal, A.. CIC nanoGUNE; EspañaFil: Bedoya Pinto, A.. CIC nanoGUNE; EspañaFil: Sun, X.. CIC nanoGUNE; EspañaFil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Hueso, L. E.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaNature Publishing Group2014-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/33679Gobbi, M.; Pietrobon, L.; Atxabal, A.; Bedoya Pinto, A.; Sun, X.; et al.; Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy; Nature Publishing Group; Nature Communications; 5; 4161; 6-2014; 1-72041-1723CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.nature.com/articles/ncomms5161info:eu-repo/semantics/altIdentifier/doi/10.1038/ncomms5161info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:57:01Zoai:ri.conicet.gov.ar:11336/33679instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:57:01.588CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
title Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
spellingShingle Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
Gobbi, M.
Metal/Molecular Semiconductor Interfaces
Fullerene
title_short Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
title_full Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
title_fullStr Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
title_full_unstemmed Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
title_sort Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy
dc.creator.none.fl_str_mv Gobbi, M.
Pietrobon, L.
Atxabal, A.
Bedoya Pinto, A.
Sun, X.
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L. E.
author Gobbi, M.
author_facet Gobbi, M.
Pietrobon, L.
Atxabal, A.
Bedoya Pinto, A.
Sun, X.
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L. E.
author_role author
author2 Pietrobon, L.
Atxabal, A.
Bedoya Pinto, A.
Sun, X.
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, L. E.
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Metal/Molecular Semiconductor Interfaces
Fullerene
topic Metal/Molecular Semiconductor Interfaces
Fullerene
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.
Fil: Gobbi, M.. CIC nanoGUNE; España. Université de Strasbourg; Francia
Fil: Pietrobon, L.. CIC nanoGUNE; España
Fil: Atxabal, A.. CIC nanoGUNE; España
Fil: Bedoya Pinto, A.. CIC nanoGUNE; España
Fil: Sun, X.. CIC nanoGUNE; España
Fil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Hueso, L. E.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
description The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.
publishDate 2014
dc.date.none.fl_str_mv 2014-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/33679
Gobbi, M.; Pietrobon, L.; Atxabal, A.; Bedoya Pinto, A.; Sun, X.; et al.; Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy; Nature Publishing Group; Nature Communications; 5; 4161; 6-2014; 1-7
2041-1723
CONICET Digital
CONICET
url http://hdl.handle.net/11336/33679
identifier_str_mv Gobbi, M.; Pietrobon, L.; Atxabal, A.; Bedoya Pinto, A.; Sun, X.; et al.; Determination of energy level alignment at metal/molecule interfaces by in-device electrical spectroscopy; Nature Publishing Group; Nature Communications; 5; 4161; 6-2014; 1-7
2041-1723
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.nature.com/articles/ncomms5161
info:eu-repo/semantics/altIdentifier/doi/10.1038/ncomms5161
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269434636402688
score 13.13397

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