Origin of the giant negative photoresistance of ZnO single crystals
- Autores
- Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel Jose; Pérez, Silvia Inés; Pöppl, A.; Eisinger, K.
- Año de publicación
- 2010
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.
Fil: Barzola Quiquia, Jose Luis. Leipzig University; Alemania
Fil: Esquinazi, Pablo. Leipzig University; Alemania
Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina
Fil: Pérez, Silvia Inés. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina
Fil: Pöppl, A.. Leipzig University; Alemania
Fil: Eisinger, K.. Leipzig University; Alemania - Materia
-
Photoconductivity
Zinc oxide
Single crystal - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/278390
Ver los metadatos del registro completo
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Origin of the giant negative photoresistance of ZnO single crystalsBarzola Quiquia, Jose LuisEsquinazi, PabloVillafuerte, Manuel JosePérez, Silvia InésPöppl, A.Eisinger, K.PhotoconductivityZinc oxideSingle crystalhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.Fil: Barzola Quiquia, Jose Luis. Leipzig University; AlemaniaFil: Esquinazi, Pablo. Leipzig University; AlemaniaFil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; ArgentinaFil: Pérez, Silvia Inés. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; ArgentinaFil: Pöppl, A.. Leipzig University; AlemaniaFil: Eisinger, K.. Leipzig University; AlemaniaAmerican Institute of Physics2010-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/278390Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel Jose; Pérez, Silvia Inés; Pöppl, A.; et al.; Origin of the giant negative photoresistance of ZnO single crystals; American Institute of Physics; Journal of Applied Physics; 108; 7; 10-2010; 1-80021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.aip.org/aip/jap/article-abstract/108/7/073530/348265/Origin-of-the-giant-negative-photoresistance-ofinfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.3486214info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-01-08T12:52:19Zoai:ri.conicet.gov.ar:11336/278390instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-01-08 12:52:19.794CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
Origin of the giant negative photoresistance of ZnO single crystals |
| title |
Origin of the giant negative photoresistance of ZnO single crystals |
| spellingShingle |
Origin of the giant negative photoresistance of ZnO single crystals Barzola Quiquia, Jose Luis Photoconductivity Zinc oxide Single crystal |
| title_short |
Origin of the giant negative photoresistance of ZnO single crystals |
| title_full |
Origin of the giant negative photoresistance of ZnO single crystals |
| title_fullStr |
Origin of the giant negative photoresistance of ZnO single crystals |
| title_full_unstemmed |
Origin of the giant negative photoresistance of ZnO single crystals |
| title_sort |
Origin of the giant negative photoresistance of ZnO single crystals |
| dc.creator.none.fl_str_mv |
Barzola Quiquia, Jose Luis Esquinazi, Pablo Villafuerte, Manuel Jose Pérez, Silvia Inés Pöppl, A. Eisinger, K. |
| author |
Barzola Quiquia, Jose Luis |
| author_facet |
Barzola Quiquia, Jose Luis Esquinazi, Pablo Villafuerte, Manuel Jose Pérez, Silvia Inés Pöppl, A. Eisinger, K. |
| author_role |
author |
| author2 |
Esquinazi, Pablo Villafuerte, Manuel Jose Pérez, Silvia Inés Pöppl, A. Eisinger, K. |
| author2_role |
author author author author author |
| dc.subject.none.fl_str_mv |
Photoconductivity Zinc oxide Single crystal |
| topic |
Photoconductivity Zinc oxide Single crystal |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness. Fil: Barzola Quiquia, Jose Luis. Leipzig University; Alemania Fil: Esquinazi, Pablo. Leipzig University; Alemania Fil: Villafuerte, Manuel Jose. Universidad Nacional de Tucumán. Instituto de Física del Noroeste Argentino. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet Noa Sur. Instituto de Física del Noroeste Argentino; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina Fil: Pérez, Silvia Inés. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina Fil: Pöppl, A.. Leipzig University; Alemania Fil: Eisinger, K.. Leipzig University; Alemania |
| description |
We have measured the temperature dependence (30 K ≤ T ≤ 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T<200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness. |
| publishDate |
2010 |
| dc.date.none.fl_str_mv |
2010-10 |
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info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
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article |
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publishedVersion |
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http://hdl.handle.net/11336/278390 Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel Jose; Pérez, Silvia Inés; Pöppl, A.; et al.; Origin of the giant negative photoresistance of ZnO single crystals; American Institute of Physics; Journal of Applied Physics; 108; 7; 10-2010; 1-8 0021-8979 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/278390 |
| identifier_str_mv |
Barzola Quiquia, Jose Luis; Esquinazi, Pablo; Villafuerte, Manuel Jose; Pérez, Silvia Inés; Pöppl, A.; et al.; Origin of the giant negative photoresistance of ZnO single crystals; American Institute of Physics; Journal of Applied Physics; 108; 7; 10-2010; 1-8 0021-8979 CONICET Digital CONICET |
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eng |
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eng |
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American Institute of Physics |
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