Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

Autores
Aguirre, Fernando Leonel; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías; Suñé, Jordi; Miranda, Enrique; Palumbo, Felix Roberto Mario
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Rodriguez Fernandez, Alberto. Universitat Autònoma de Barcelona; España
Fil: Pazos, Sebastián Matías. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Suñé, Jordi. Universitat Autònoma de Barcelona; España
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Fil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
HIGH-K
PROGRESSIVE OXIDE BREAKDOWN
RESISTIVE RANDOM ACCESS MEMORY (RRAM)
RESISTIVE SWITCHING (RS)
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/122850
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin OxidesAguirre, Fernando LeonelRodriguez Fernandez, AlbertoPazos, Sebastián MatíasSuñé, JordiMiranda, EnriquePalumbo, Felix Roberto MarioHIGH-KPROGRESSIVE OXIDE BREAKDOWNRESISTIVE RANDOM ACCESS MEMORY (RRAM)RESISTIVE SWITCHING (RS)https://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2https://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Rodriguez Fernandez, Alberto. Universitat Autònoma de Barcelona; EspañaFil: Pazos, Sebastián Matías. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Suñé, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaFil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaInstitute of Electrical and Electronics Engineers2019-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/122850Aguirre, Fernando Leonel; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías; Suñé, Jordi; Miranda, Enrique; et al.; Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 66; 8; 8-2019; 3349-33550018-9383CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8746809/info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2019.2922555info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:34:59Zoai:ri.conicet.gov.ar:11336/122850instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:34:59.391CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
title Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
spellingShingle Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
Aguirre, Fernando Leonel
HIGH-K
PROGRESSIVE OXIDE BREAKDOWN
RESISTIVE RANDOM ACCESS MEMORY (RRAM)
RESISTIVE SWITCHING (RS)
title_short Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
title_full Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
title_fullStr Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
title_full_unstemmed Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
title_sort Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
dc.creator.none.fl_str_mv Aguirre, Fernando Leonel
Rodriguez Fernandez, Alberto
Pazos, Sebastián Matías
Suñé, Jordi
Miranda, Enrique
Palumbo, Felix Roberto Mario
author Aguirre, Fernando Leonel
author_facet Aguirre, Fernando Leonel
Rodriguez Fernandez, Alberto
Pazos, Sebastián Matías
Suñé, Jordi
Miranda, Enrique
Palumbo, Felix Roberto Mario
author_role author
author2 Rodriguez Fernandez, Alberto
Pazos, Sebastián Matías
Suñé, Jordi
Miranda, Enrique
Palumbo, Felix Roberto Mario
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv HIGH-K
PROGRESSIVE OXIDE BREAKDOWN
RESISTIVE RANDOM ACCESS MEMORY (RRAM)
RESISTIVE SWITCHING (RS)
topic HIGH-K
PROGRESSIVE OXIDE BREAKDOWN
RESISTIVE RANDOM ACCESS MEMORY (RRAM)
RESISTIVE SWITCHING (RS)
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Rodriguez Fernandez, Alberto. Universitat Autònoma de Barcelona; España
Fil: Pazos, Sebastián Matías. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Suñé, Jordi. Universitat Autònoma de Barcelona; España
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Fil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.
publishDate 2019
dc.date.none.fl_str_mv 2019-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/122850
Aguirre, Fernando Leonel; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías; Suñé, Jordi; Miranda, Enrique; et al.; Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 66; 8; 8-2019; 3349-3355
0018-9383
CONICET Digital
CONICET
url http://hdl.handle.net/11336/122850
identifier_str_mv Aguirre, Fernando Leonel; Rodriguez Fernandez, Alberto; Pazos, Sebastián Matías; Suñé, Jordi; Miranda, Enrique; et al.; Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides; Institute of Electrical and Electronics Engineers; Ieee Transactions On Electron Devices; 66; 8; 8-2019; 3349-3355
0018-9383
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8746809/
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2019.2922555
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613086169792512
score 13.070432

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