Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

Autores
Miranda, E.; Palumbo, Félix Roberto Mario
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided.
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Ezeiza; Argentina
Materia
FOWLER-NORDHEIM
MOS
TUNNELING
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/188617
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/188617
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effectMiranda, E.Palumbo, Félix Roberto MarioFOWLER-NORDHEIMMOSTUNNELINGhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided.Fil: Miranda, E.. Universitat Autònoma de Barcelona; EspañaFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Ezeiza; ArgentinaPergamon-Elsevier Science Ltd2011-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/188617Miranda, E.; Palumbo, Félix Roberto Mario; Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 61; 1; 7-2011; 93-950038-1101CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0038110111001225info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2011.03.015info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-29T12:02:19Zoai:ri.conicet.gov.ar:11336/188617instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-29 12:02:19.805CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
title Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
spellingShingle Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
Miranda, E.
FOWLER-NORDHEIM
MOS
TUNNELING
title_short Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
title_full Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
title_fullStr Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
title_full_unstemmed Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
title_sort Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect
dc.creator.none.fl_str_mv Miranda, E.
Palumbo, Félix Roberto Mario
author Miranda, E.
author_facet Miranda, E.
Palumbo, Félix Roberto Mario
author_role author
author2 Palumbo, Félix Roberto Mario
author2_role author
dc.subject.none.fl_str_mv FOWLER-NORDHEIM
MOS
TUNNELING
topic FOWLER-NORDHEIM
MOS
TUNNELING
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided.
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Ezeiza; Argentina
description It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided.
publishDate 2011
dc.date.none.fl_str_mv 2011-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/188617
Miranda, E.; Palumbo, Félix Roberto Mario; Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 61; 1; 7-2011; 93-95
0038-1101
CONICET Digital
CONICET
url http://hdl.handle.net/11336/188617
identifier_str_mv Miranda, E.; Palumbo, Félix Roberto Mario; Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect; Pergamon-Elsevier Science Ltd; Solid-state Electronics; 61; 1; 7-2011; 93-95
0038-1101
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0038110111001225
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2011.03.015
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1847426785285767168
score 13.10058

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