Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon

Autores
Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.
We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Secondary electrons
Porous silicon
Ion bombardment
nanostructure
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/26159
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous SiliconRuano Sandoval, Gustavo DanielFerron, JulioKoropecki, Roberto RomanSecondary electronsPorous siliconIon bombardmentnanostructurehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaBentham Science Publishers Ltd.2009-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26159Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-491876-5319CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://benthamopen.com/ABSTRACT/TOSURSJ-1-46info:eu-repo/semantics/altIdentifier/doi/10.2174/1876531900901010046info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:16:29Zoai:ri.conicet.gov.ar:11336/26159instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:16:30.195CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
title Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
spellingShingle Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
Ruano Sandoval, Gustavo Daniel
Secondary electrons
Porous silicon
Ion bombardment
nanostructure
title_short Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
title_full Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
title_fullStr Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
title_full_unstemmed Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
title_sort Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
dc.creator.none.fl_str_mv Ruano Sandoval, Gustavo Daniel
Ferron, Julio
Koropecki, Roberto Roman
author Ruano Sandoval, Gustavo Daniel
author_facet Ruano Sandoval, Gustavo Daniel
Ferron, Julio
Koropecki, Roberto Roman
author_role author
author2 Ferron, Julio
Koropecki, Roberto Roman
author2_role author
author
dc.subject.none.fl_str_mv Secondary electrons
Porous silicon
Ion bombardment
nanostructure
topic Secondary electrons
Porous silicon
Ion bombardment
nanostructure
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.
publishDate 2009
dc.date.none.fl_str_mv 2009-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/26159
Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-49
1876-5319
CONICET Digital
CONICET
url http://hdl.handle.net/11336/26159
identifier_str_mv Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-49
1876-5319
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://benthamopen.com/ABSTRACT/TOSURSJ-1-46
info:eu-repo/semantics/altIdentifier/doi/10.2174/1876531900901010046
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Bentham Science Publishers Ltd.
publisher.none.fl_str_mv Bentham Science Publishers Ltd.
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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