Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon
- Autores
- Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman
- Año de publicación
- 2009
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.
We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.
Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina - Materia
-
Secondary electrons
Porous silicon
Ion bombardment
nanostructure - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/26159
Ver los metadatos del registro completo
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Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous SiliconRuano Sandoval, Gustavo DanielFerron, JulioKoropecki, Roberto RomanSecondary electronsPorous siliconIon bombardmentnanostructurehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy.Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaBentham Science Publishers Ltd.2009-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26159Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-491876-5319CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://benthamopen.com/ABSTRACT/TOSURSJ-1-46info:eu-repo/semantics/altIdentifier/doi/10.2174/1876531900901010046info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:19:17Zoai:ri.conicet.gov.ar:11336/26159instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:19:17.534CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
title |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
spellingShingle |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon Ruano Sandoval, Gustavo Daniel Secondary electrons Porous silicon Ion bombardment nanostructure |
title_short |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
title_full |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
title_fullStr |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
title_full_unstemmed |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
title_sort |
Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon |
dc.creator.none.fl_str_mv |
Ruano Sandoval, Gustavo Daniel Ferron, Julio Koropecki, Roberto Roman |
author |
Ruano Sandoval, Gustavo Daniel |
author_facet |
Ruano Sandoval, Gustavo Daniel Ferron, Julio Koropecki, Roberto Roman |
author_role |
author |
author2 |
Ferron, Julio Koropecki, Roberto Roman |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Secondary electrons Porous silicon Ion bombardment nanostructure |
topic |
Secondary electrons Porous silicon Ion bombardment nanostructure |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy. Fil: Ruano Sandoval, Gustavo Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina |
description |
We report measurements of secondary electron emission (SEE) induced by electron and ion bombardment on porous silicon (PS). We found that electron induced emission is strongly reduced by ion bombardment, and that this reduction is reversible. The reduction effect is large even for ion fluxes much lower compared to that of the electron beam.<br />We attribute this effect to changes in the charge distribution of the surface dipole originated in the difference between ion and electron charge deposition depths. The nanostructure of PS plays an important role in this effect as well as in the reversibility of the process. We think that this effect could be useful in the dynamic centering and monitoring of ion and electron beams in electron spectroscopy. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-12 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/26159 Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-49 1876-5319 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/26159 |
identifier_str_mv |
Ruano Sandoval, Gustavo Daniel; Ferron, Julio; Koropecki, Roberto Roman; Reversible Ion Induced Modification of Consequent Secondary Electron Emission in Porous Silicon; Bentham Science Publishers Ltd.; The Open Surface Science Journal; 1; 12-2009; 46-49 1876-5319 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://benthamopen.com/ABSTRACT/TOSURSJ-1-46 info:eu-repo/semantics/altIdentifier/doi/10.2174/1876531900901010046 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Bentham Science Publishers Ltd. |
publisher.none.fl_str_mv |
Bentham Science Publishers Ltd. |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614163103481856 |
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13.070432 |