Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces

Autores
Gayone, Julio Esteban; Sánchez, Esteban Alejandro; Grizzi, Oscar; Vergara, L.I.; Passeggi, Mario Cesar Guillermo; Vidal, Ricardo Alberto; Ferron, Julio
Año de publicación
2002
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Ion scattering and recoiling spectroscopy with time of flight analysis is used to study the ion fractions of Ga and As atoms recoiled in collisions of 5 keV Ar+ and Kr+ with clean GaAs(1 1 0) and with GaAs(1 1 0) covered with H, alkali metals (K and Cs) and fluorides (AlF3). For the case of the clean surface, the Ga ion fraction is positive, large (∼50%) and independent of the projectile type. The As ion fraction is also positive, low for Ar+ (<10%) and relatively large (25%) for Kr+ projectiles. The adsorption of H produces slight changes in both the As and Ga ion fractions, which is in agreement with the adsorption model where H reacts with both As and Ga atoms. The adsorption of alkalis produces strong changes in the ion fractions. At the beginning of the alkali adsorption the neutralization of Ga recoils increases fast with the coverage and follows approximately the variation of the work function. At coverages above half of the saturation value, where the work function has attained a stable value, the ion fraction in Ga remains low (∼10%) and stable while that in As changes, the positive ion fraction decreases and the negative ion fraction increases. This behavior is related to the preferential adsorption sites and the modification of the electronic structure at the surface. The adsorption of AlF3 produces no change in the Ga and As ion fractions for the whole range of coverages investigated (up to full coverage), supporting a non-dissociative and weak reacting model for adsorption.
Fil: Gayone, Julio Esteban. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Sánchez, Esteban Alejandro. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Grizzi, Oscar. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Vergara, L.I.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Passeggi, Mario Cesar Guillermo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Vidal, Ricardo Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Ion
Fraction
Recoil
Bombardment
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/30086
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/30086
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfacesGayone, Julio EstebanSánchez, Esteban AlejandroGrizzi, OscarVergara, L.I.Passeggi, Mario Cesar GuillermoVidal, Ricardo AlbertoFerron, JulioIonFractionRecoilBombardmenthttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Ion scattering and recoiling spectroscopy with time of flight analysis is used to study the ion fractions of Ga and As atoms recoiled in collisions of 5 keV Ar+ and Kr+ with clean GaAs(1 1 0) and with GaAs(1 1 0) covered with H, alkali metals (K and Cs) and fluorides (AlF3). For the case of the clean surface, the Ga ion fraction is positive, large (∼50%) and independent of the projectile type. The As ion fraction is also positive, low for Ar+ (<10%) and relatively large (25%) for Kr+ projectiles. The adsorption of H produces slight changes in both the As and Ga ion fractions, which is in agreement with the adsorption model where H reacts with both As and Ga atoms. The adsorption of alkalis produces strong changes in the ion fractions. At the beginning of the alkali adsorption the neutralization of Ga recoils increases fast with the coverage and follows approximately the variation of the work function. At coverages above half of the saturation value, where the work function has attained a stable value, the ion fraction in Ga remains low (∼10%) and stable while that in As changes, the positive ion fraction decreases and the negative ion fraction increases. This behavior is related to the preferential adsorption sites and the modification of the electronic structure at the surface. The adsorption of AlF3 produces no change in the Ga and As ion fractions for the whole range of coverages investigated (up to full coverage), supporting a non-dissociative and weak reacting model for adsorption.Fil: Gayone, Julio Esteban. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); ArgentinaFil: Sánchez, Esteban Alejandro. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); ArgentinaFil: Grizzi, Oscar. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); ArgentinaFil: Vergara, L.I.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Passeggi, Mario Cesar Guillermo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Vidal, Ricardo Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science2002-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/30086Gayone, Julio Esteban; Sánchez, Esteban Alejandro; Grizzi, Oscar; Vergara, L.I.; Passeggi, Mario Cesar Guillermo; et al.; Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces; Elsevier Science; Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms; 193; 12-2002; 440-4480168-583XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/S0168-583X(02)00817-0info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:53:43Zoai:ri.conicet.gov.ar:11336/30086instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:53:43.405CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
title Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
spellingShingle Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
Gayone, Julio Esteban
Ion
Fraction
Recoil
Bombardment
title_short Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
title_full Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
title_fullStr Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
title_full_unstemmed Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
title_sort Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces
dc.creator.none.fl_str_mv Gayone, Julio Esteban
Sánchez, Esteban Alejandro
Grizzi, Oscar
Vergara, L.I.
Passeggi, Mario Cesar Guillermo
Vidal, Ricardo Alberto
Ferron, Julio
author Gayone, Julio Esteban
author_facet Gayone, Julio Esteban
Sánchez, Esteban Alejandro
Grizzi, Oscar
Vergara, L.I.
Passeggi, Mario Cesar Guillermo
Vidal, Ricardo Alberto
Ferron, Julio
author_role author
author2 Sánchez, Esteban Alejandro
Grizzi, Oscar
Vergara, L.I.
Passeggi, Mario Cesar Guillermo
Vidal, Ricardo Alberto
Ferron, Julio
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Ion
Fraction
Recoil
Bombardment
topic Ion
Fraction
Recoil
Bombardment
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Ion scattering and recoiling spectroscopy with time of flight analysis is used to study the ion fractions of Ga and As atoms recoiled in collisions of 5 keV Ar+ and Kr+ with clean GaAs(1 1 0) and with GaAs(1 1 0) covered with H, alkali metals (K and Cs) and fluorides (AlF3). For the case of the clean surface, the Ga ion fraction is positive, large (∼50%) and independent of the projectile type. The As ion fraction is also positive, low for Ar+ (<10%) and relatively large (25%) for Kr+ projectiles. The adsorption of H produces slight changes in both the As and Ga ion fractions, which is in agreement with the adsorption model where H reacts with both As and Ga atoms. The adsorption of alkalis produces strong changes in the ion fractions. At the beginning of the alkali adsorption the neutralization of Ga recoils increases fast with the coverage and follows approximately the variation of the work function. At coverages above half of the saturation value, where the work function has attained a stable value, the ion fraction in Ga remains low (∼10%) and stable while that in As changes, the positive ion fraction decreases and the negative ion fraction increases. This behavior is related to the preferential adsorption sites and the modification of the electronic structure at the surface. The adsorption of AlF3 produces no change in the Ga and As ion fractions for the whole range of coverages investigated (up to full coverage), supporting a non-dissociative and weak reacting model for adsorption.
Fil: Gayone, Julio Esteban. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Sánchez, Esteban Alejandro. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Grizzi, Oscar. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); Argentina
Fil: Vergara, L.I.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Passeggi, Mario Cesar Guillermo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Vidal, Ricardo Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ferron, Julio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description Ion scattering and recoiling spectroscopy with time of flight analysis is used to study the ion fractions of Ga and As atoms recoiled in collisions of 5 keV Ar+ and Kr+ with clean GaAs(1 1 0) and with GaAs(1 1 0) covered with H, alkali metals (K and Cs) and fluorides (AlF3). For the case of the clean surface, the Ga ion fraction is positive, large (∼50%) and independent of the projectile type. The As ion fraction is also positive, low for Ar+ (<10%) and relatively large (25%) for Kr+ projectiles. The adsorption of H produces slight changes in both the As and Ga ion fractions, which is in agreement with the adsorption model where H reacts with both As and Ga atoms. The adsorption of alkalis produces strong changes in the ion fractions. At the beginning of the alkali adsorption the neutralization of Ga recoils increases fast with the coverage and follows approximately the variation of the work function. At coverages above half of the saturation value, where the work function has attained a stable value, the ion fraction in Ga remains low (∼10%) and stable while that in As changes, the positive ion fraction decreases and the negative ion fraction increases. This behavior is related to the preferential adsorption sites and the modification of the electronic structure at the surface. The adsorption of AlF3 produces no change in the Ga and As ion fractions for the whole range of coverages investigated (up to full coverage), supporting a non-dissociative and weak reacting model for adsorption.
publishDate 2002
dc.date.none.fl_str_mv 2002-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/30086
Gayone, Julio Esteban; Sánchez, Esteban Alejandro; Grizzi, Oscar; Vergara, L.I.; Passeggi, Mario Cesar Guillermo; et al.; Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces; Elsevier Science; Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms; 193; 12-2002; 440-448
0168-583X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/30086
identifier_str_mv Gayone, Julio Esteban; Sánchez, Esteban Alejandro; Grizzi, Oscar; Vergara, L.I.; Passeggi, Mario Cesar Guillermo; et al.; Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(1 1 0) surfaces; Elsevier Science; Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms; 193; 12-2002; 440-448
0168-583X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/S0168-583X(02)00817-0
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.885934

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