Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration

Autores
Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.
Año de publicación
2003
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.
Fil: Xu, G. J.. University of Illinois at Urbana; Estados Unidos
Fil: Nakayama, Koji S.. University of Illinois at Urbana; Estados Unidos
Fil: Trenhaile, B.R.. University of Illinois at Urbana; Estados Unidos
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos
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acceso abierto
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https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
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oai:ri.conicet.gov.ar:11336/77067
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network_name_str CONICET Digital (CONICET)
spelling Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentrationXu, G. J.Nakayama, Koji S.Trenhaile, B.R.Aldao, Celso ManuelWeaver, J. H.https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.Fil: Xu, G. J.. University of Illinois at Urbana; Estados UnidosFil: Nakayama, Koji S.. University of Illinois at Urbana; Estados UnidosFil: Trenhaile, B.R.. University of Illinois at Urbana; Estados UnidosFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Weaver, J. H.. University of Illinois at Urbana; Estados UnidosAmerican Physical Society2003-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/77067Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 1253211098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.67.125321info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.67.125321info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:47:24Zoai:ri.conicet.gov.ar:11336/77067instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:47:24.621CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
title Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
spellingShingle Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
Xu, G. J.
title_short Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
title_full Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
title_fullStr Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
title_full_unstemmed Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
title_sort Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
dc.creator.none.fl_str_mv Xu, G. J.
Nakayama, Koji S.
Trenhaile, B.R.
Aldao, Celso Manuel
Weaver, J. H.
author Xu, G. J.
author_facet Xu, G. J.
Nakayama, Koji S.
Trenhaile, B.R.
Aldao, Celso Manuel
Weaver, J. H.
author_role author
author2 Nakayama, Koji S.
Trenhaile, B.R.
Aldao, Celso Manuel
Weaver, J. H.
author2_role author
author
author
author
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.
Fil: Xu, G. J.. University of Illinois at Urbana; Estados Unidos
Fil: Nakayama, Koji S.. University of Illinois at Urbana; Estados Unidos
Fil: Trenhaile, B.R.. University of Illinois at Urbana; Estados Unidos
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos
description Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.
publishDate 2003
dc.date.none.fl_str_mv 2003-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/77067
Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 125321
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/77067
identifier_str_mv Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 125321
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
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info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.67.125321
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eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
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instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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