Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration
- Autores
- Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.
- Año de publicación
- 2003
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.
Fil: Xu, G. J.. University of Illinois at Urbana; Estados Unidos
Fil: Nakayama, Koji S.. University of Illinois at Urbana; Estados Unidos
Fil: Trenhaile, B.R.. University of Illinois at Urbana; Estados Unidos
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/77067
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Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentrationXu, G. J.Nakayama, Koji S.Trenhaile, B.R.Aldao, Celso ManuelWeaver, J. H.https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions.Fil: Xu, G. J.. University of Illinois at Urbana; Estados UnidosFil: Nakayama, Koji S.. University of Illinois at Urbana; Estados UnidosFil: Trenhaile, B.R.. University of Illinois at Urbana; Estados UnidosFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Weaver, J. H.. University of Illinois at Urbana; Estados UnidosAmerican Physical Society2003-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/77067Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 1253211098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.67.125321info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.67.125321info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:17:15Zoai:ri.conicet.gov.ar:11336/77067instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:17:15.931CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
title |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
spellingShingle |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration Xu, G. J. |
title_short |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
title_full |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
title_fullStr |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
title_full_unstemmed |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
title_sort |
Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration |
dc.creator.none.fl_str_mv |
Xu, G. J. Nakayama, Koji S. Trenhaile, B.R. Aldao, Celso Manuel Weaver, J. H. |
author |
Xu, G. J. |
author_facet |
Xu, G. J. Nakayama, Koji S. Trenhaile, B.R. Aldao, Celso Manuel Weaver, J. H. |
author_role |
author |
author2 |
Nakayama, Koji S. Trenhaile, B.R. Aldao, Celso Manuel Weaver, J. H. |
author2_role |
author author author author |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions. Fil: Xu, G. J.. University of Illinois at Urbana; Estados Unidos Fil: Nakayama, Koji S.. University of Illinois at Urbana; Estados Unidos Fil: Trenhaile, B.R.. University of Illinois at Urbana; Estados Unidos Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos |
description |
Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 ML of Cl. Dimer vacancies and Si adatoms were observed at short times, and at longer times the progression toward a state of dynamic equilibrium was traced. Once dynamic equilibrium was reached, the appearance of individual pits and regrowth islands changed but their densities and mean sizes did not. The results show that the roughness depends nonlinearly on Cl coverage with surfaces having 0.3 ML being nearly ten times rougher than those with 0.1 ML. The importance of Cl-free dimers is stressed, and the role of Cl as an impediment for vacancy and adatom diffusion is demonstrated. Roughening is attributed mainly to adsorbate-adsorbate repulsive interactions. |
publishDate |
2003 |
dc.date.none.fl_str_mv |
2003-03 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/77067 Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 125321 1098-0121 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/77067 |
identifier_str_mv |
Xu, G. J.; Nakayama, Koji S.; Trenhaile, B.R.; Aldao, Celso Manuel; Weaver, J. H.; Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 67; 12; 3-2003; 1-6; 125321 1098-0121 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.67.125321 info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.67.125321 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Physical Society |
publisher.none.fl_str_mv |
American Physical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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13.070432 |