Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon

Autores
Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; Argentina. Universidad Nacional de Tucumán; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Materia
Metal/Semiconductor Interfaces
Porous Silicon (Ps)
Switchable Diode Effect
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/6542
Acceder
id CONICETDig_67c39f069efc86aef727634d43b2d328
oai_identifier_str oai:ri.conicet.gov.ar:11336/6542
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Switchable Electric Field Induced Diode Effect in Nanostructured Porous SiliconMarín Ramírez, Oscar AlonsoUrteaga, RaulComedi, David MarioKoropecki, Roberto RomanMetal/Semiconductor InterfacesPorous Silicon (Ps)Switchable Diode Effecthttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1https://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); ArgentinaFil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); ArgentinaFil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; Argentina. Universidad Nacional de Tucumán; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); ArgentinaInstitute of Electrical and Electronics Engineers2013-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/6542Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 34; 5; 4-2013; 590-5920741-3106enginfo:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6502196info:eu-repo/semantics/altIdentifier/doi/info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2013.2253754info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:05:47Zoai:ri.conicet.gov.ar:11336/6542instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:05:48.278CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
title Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
spellingShingle Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
Marín Ramírez, Oscar Alonso
Metal/Semiconductor Interfaces
Porous Silicon (Ps)
Switchable Diode Effect
title_short Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
title_full Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
title_fullStr Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
title_full_unstemmed Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
title_sort Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon
dc.creator.none.fl_str_mv Marín Ramírez, Oscar Alonso
Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author Marín Ramírez, Oscar Alonso
author_facet Marín Ramírez, Oscar Alonso
Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author_role author
author2 Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author2_role author
author
author
dc.subject.none.fl_str_mv Metal/Semiconductor Interfaces
Porous Silicon (Ps)
Switchable Diode Effect
topic Metal/Semiconductor Interfaces
Porous Silicon (Ps)
Switchable Diode Effect
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; Argentina. Universidad Nacional de Tucumán; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina
description Unidirectional current flow (diode-like behavior) is observed in Al/Nanostructured Porous Silicon/Al structures (Al/SP/Al) after applying a forming electric field (E) for a long time. We found that rectifying characteristics depend on the direction of E. The forward direction coincides with the direction of E. The diode direction switches when E is inverted. The rectification factor passes from 200 to 26 from one direction to the other, the effect is reversible and can be repeated several times.
publishDate 2013
dc.date.none.fl_str_mv 2013-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/6542
Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 34; 5; 4-2013; 590-592
0741-3106
url http://hdl.handle.net/11336/6542
identifier_str_mv Marín Ramírez, Oscar Alonso; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Switchable Electric Field Induced Diode Effect in Nanostructured Porous Silicon; Institute of Electrical and Electronics Engineers; IEEE Electron Device Letters; 34; 5; 4-2013; 590-592
0741-3106
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6502196
info:eu-repo/semantics/altIdentifier/doi/
info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2013.2253754
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613898843455488
score 13.070432

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