Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation

Autores
Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario; Sanfilippo, D.; Valvo, G.; Fallica, G.; Libertino, S.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Fil: Pagano, R.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Lombardo, S.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; Israel
Fil: Sanfilippo, D.. STMicroelectronics. Catania; Italia
Fil: Valvo, G.. STMicroelectronics. Catania; Italia
Fil: Fallica, G.. STMicroelectronics. Catania; Italia
Fil: Libertino, S.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Materia
Silicon Photomultiplier
Radiation Damage
Radiation Hardness
Gamma Rays
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/35926
Acceder
id CONICETDig_c09b48628b646e70e46d8fd5cf6a5986
oai_identifier_str oai:ri.conicet.gov.ar:11336/35926
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiationPagano, R.Lombardo, S.Palumbo, Félix Roberto MarioSanfilippo, D.Valvo, G.Fallica, G.Libertino, S.Silicon PhotomultiplierRadiation DamageRadiation HardnessGamma Rayshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.Fil: Pagano, R.. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaFil: Lombardo, S.. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; IsraelFil: Sanfilippo, D.. STMicroelectronics. Catania; ItaliaFil: Valvo, G.. STMicroelectronics. Catania; ItaliaFil: Fallica, G.. STMicroelectronics. Catania; ItaliaFil: Libertino, S.. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaElsevier Science2014-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/35926Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario; Sanfilippo, D.; Valvo, G. ; et al.; Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation; Elsevier Science; Nuclear Instruments And Methods In Physics Research A: Accelerators, Spectrometers, Detectors And Associated Equipament; 767; 9-2014; 347-3520168-9002CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.nima.2014.08.028info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0168900214009577info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:40:16Zoai:ri.conicet.gov.ar:11336/35926instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:40:16.289CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
title Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
spellingShingle Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
Pagano, R.
Silicon Photomultiplier
Radiation Damage
Radiation Hardness
Gamma Rays
title_short Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
title_full Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
title_fullStr Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
title_full_unstemmed Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
title_sort Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation
dc.creator.none.fl_str_mv Pagano, R.
Lombardo, S.
Palumbo, Félix Roberto Mario
Sanfilippo, D.
Valvo, G.
Fallica, G.
Libertino, S.
author Pagano, R.
author_facet Pagano, R.
Lombardo, S.
Palumbo, Félix Roberto Mario
Sanfilippo, D.
Valvo, G.
Fallica, G.
Libertino, S.
author_role author
author2 Lombardo, S.
Palumbo, Félix Roberto Mario
Sanfilippo, D.
Valvo, G.
Fallica, G.
Libertino, S.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Silicon Photomultiplier
Radiation Damage
Radiation Hardness
Gamma Rays
topic Silicon Photomultiplier
Radiation Damage
Radiation Hardness
Gamma Rays
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
Fil: Pagano, R.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Lombardo, S.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Technion - Israel Institute of Technology; Israel
Fil: Sanfilippo, D.. STMicroelectronics. Catania; Italia
Fil: Valvo, G.. STMicroelectronics. Catania; Italia
Fil: Fallica, G.. STMicroelectronics. Catania; Italia
Fil: Libertino, S.. Istituto per la Microelettronica e Microsistemi. Catania; Italia
description Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated as a function of irradiation dose.
publishDate 2014
dc.date.none.fl_str_mv 2014-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/35926
Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario; Sanfilippo, D.; Valvo, G. ; et al.; Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation; Elsevier Science; Nuclear Instruments And Methods In Physics Research A: Accelerators, Spectrometers, Detectors And Associated Equipament; 767; 9-2014; 347-352
0168-9002
CONICET Digital
CONICET
url http://hdl.handle.net/11336/35926
identifier_str_mv Pagano, R.; Lombardo, S.; Palumbo, Félix Roberto Mario; Sanfilippo, D.; Valvo, G. ; et al.; Radiation hardness of silicon Photomultipliers under 60Co γ-ray irradiation; Elsevier Science; Nuclear Instruments And Methods In Physics Research A: Accelerators, Spectrometers, Detectors And Associated Equipament; 767; 9-2014; 347-352
0168-9002
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.nima.2014.08.028
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0168900214009577
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614430015356928
score 13.070432

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