Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe

Autores
Di Stefano, María Cristina; Heredia, Eduardo Armando; Gilabert, Ulises Eduardo; Trigubo, Alicia Beatriz
Año de publicación
2004
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Hg 1-xCd xTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96Zn 0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and x ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films.
Fil: Di Stefano, María Cristina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Heredia, Eduardo Armando. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; Argentina
Fil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Materia
Epitaxial Films
Hg 1-Xcd Xte
Isovpe
Mct
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82754
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTeDi Stefano, María CristinaHeredia, Eduardo ArmandoGilabert, Ulises EduardoTrigubo, Alicia BeatrizEpitaxial FilmsHg 1-Xcd XteIsovpeMcthttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Hg 1-xCd xTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96Zn 0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and x ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films.Fil: Di Stefano, María Cristina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Heredia, Eduardo Armando. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; ArgentinaFil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaWiley VCH Verlag2004-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82754Di Stefano, María Cristina; Heredia, Eduardo Armando; Gilabert, Ulises Eduardo; Trigubo, Alicia Beatriz; Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe; Wiley VCH Verlag; Crystal Research And Technology; 39; 10; 10-2004; 881-8850232-1300CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1002/crat.200410271info:eu-repo/semantics/altIdentifier/url/https://onlinelibrary.wiley.com/doi/abs/10.1002/crat.200410271info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:25:55Zoai:ri.conicet.gov.ar:11336/82754instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:25:55.705CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
title Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
spellingShingle Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
Di Stefano, María Cristina
Epitaxial Films
Hg 1-Xcd Xte
Isovpe
Mct
title_short Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
title_full Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
title_fullStr Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
title_full_unstemmed Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
title_sort Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe
dc.creator.none.fl_str_mv Di Stefano, María Cristina
Heredia, Eduardo Armando
Gilabert, Ulises Eduardo
Trigubo, Alicia Beatriz
author Di Stefano, María Cristina
author_facet Di Stefano, María Cristina
Heredia, Eduardo Armando
Gilabert, Ulises Eduardo
Trigubo, Alicia Beatriz
author_role author
author2 Heredia, Eduardo Armando
Gilabert, Ulises Eduardo
Trigubo, Alicia Beatriz
author2_role author
author
author
dc.subject.none.fl_str_mv Epitaxial Films
Hg 1-Xcd Xte
Isovpe
Mct
topic Epitaxial Films
Hg 1-Xcd Xte
Isovpe
Mct
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Hg 1-xCd xTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96Zn 0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and x ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films.
Fil: Di Stefano, María Cristina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Heredia, Eduardo Armando. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas; Argentina
Fil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
description Hg 1-xCd xTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96Zn 0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and x ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films.
publishDate 2004
dc.date.none.fl_str_mv 2004-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82754
Di Stefano, María Cristina; Heredia, Eduardo Armando; Gilabert, Ulises Eduardo; Trigubo, Alicia Beatriz; Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe; Wiley VCH Verlag; Crystal Research And Technology; 39; 10; 10-2004; 881-885
0232-1300
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82754
identifier_str_mv Di Stefano, María Cristina; Heredia, Eduardo Armando; Gilabert, Ulises Eduardo; Trigubo, Alicia Beatriz; Properties of Hg 1-xCd xTe epitaxial films grown on (211)CdTe and (211)CdZnTe; Wiley VCH Verlag; Crystal Research And Technology; 39; 10; 10-2004; 881-885
0232-1300
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/crat.200410271
info:eu-repo/semantics/altIdentifier/url/https://onlinelibrary.wiley.com/doi/abs/10.1002/crat.200410271
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley VCH Verlag
publisher.none.fl_str_mv Wiley VCH Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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