Sulfurization of electrodeposited CuInSe2-based solar cells

Autores
Valdes, Matias Hernan; Goossens, Alain; Vazquez, Marcela Vivian
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
CuInSe2 (CISe) thin films have been prepared by single-step electrodeposition on top of TCO/TiO2 and TCO/TiO2/In2S3 coated electrodes. TiO2 and In2S3 have been deposited by spray–pyrolysis. The electrodeposition step is studied using cyclic voltammetry in an acidic electrolyte. Electrodeposited CISe is then subjected to two different thermal treatments. The first treatment is an annealing step under argon atmosphere, carried out to enhance the crystallinity of the film. The second consists of a sulfurization process, where sulfur is vaporized and mixed with the argon flux, leading to substantial changes in the composition of the chalcogenide. The crystallinity, morphology and stoichiometry of the annealed films are characterized by XRD, micro-Raman spectroscopy and SEM/EDX. Raman spectra and EDX show an almost complete replacement of the Se atoms by S atoms. Etching the films in KCN solution is a key step, enabling a final adjustment in the stoichiometry. The incorporation of In2S3 buffer layer in TiO2/CuIn(SeS)2 solar cells produces a marked improvement in the cell efficiency. Despite this improvement, the values of Jsc and the fill factor (FF) are relatively low, showing efficiencies below 1%, most likely associated to the resistances present in the multi-layered cell.
Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Goossens, Alain. Delft University of Technology; Países Bajos
Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Materia
Chalcogenides
Annealing
Semiconductors
Electrical Properties
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/76569
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/76569
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Sulfurization of electrodeposited CuInSe2-based solar cellsValdes, Matias HernanGoossens, AlainVazquez, Marcela VivianChalcogenidesAnnealingSemiconductorsElectrical Propertieshttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1CuInSe2 (CISe) thin films have been prepared by single-step electrodeposition on top of TCO/TiO2 and TCO/TiO2/In2S3 coated electrodes. TiO2 and In2S3 have been deposited by spray–pyrolysis. The electrodeposition step is studied using cyclic voltammetry in an acidic electrolyte. Electrodeposited CISe is then subjected to two different thermal treatments. The first treatment is an annealing step under argon atmosphere, carried out to enhance the crystallinity of the film. The second consists of a sulfurization process, where sulfur is vaporized and mixed with the argon flux, leading to substantial changes in the composition of the chalcogenide. The crystallinity, morphology and stoichiometry of the annealed films are characterized by XRD, micro-Raman spectroscopy and SEM/EDX. Raman spectra and EDX show an almost complete replacement of the Se atoms by S atoms. Etching the films in KCN solution is a key step, enabling a final adjustment in the stoichiometry. The incorporation of In2S3 buffer layer in TiO2/CuIn(SeS)2 solar cells produces a marked improvement in the cell efficiency. Despite this improvement, the values of Jsc and the fill factor (FF) are relatively low, showing efficiencies below 1%, most likely associated to the resistances present in the multi-layered cell.Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Goossens, Alain. Delft University of Technology; Países BajosFil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaElsevier Science Sa2010-09-20info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/76569Valdes, Matias Hernan; Goossens, Alain; Vazquez, Marcela Vivian; Sulfurization of electrodeposited CuInSe2-based solar cells; Elsevier Science Sa; Materials Chemistry and Physics; 125; 3; 20-9-2010; 860-8650254-0584CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0254058410007595info:eu-repo/semantics/altIdentifier/doi/10.1016/j.matchemphys.2010.09.032info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:55:46Zoai:ri.conicet.gov.ar:11336/76569instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:55:46.668CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Sulfurization of electrodeposited CuInSe2-based solar cells
title Sulfurization of electrodeposited CuInSe2-based solar cells
spellingShingle Sulfurization of electrodeposited CuInSe2-based solar cells
Valdes, Matias Hernan
Chalcogenides
Annealing
Semiconductors
Electrical Properties
title_short Sulfurization of electrodeposited CuInSe2-based solar cells
title_full Sulfurization of electrodeposited CuInSe2-based solar cells
title_fullStr Sulfurization of electrodeposited CuInSe2-based solar cells
title_full_unstemmed Sulfurization of electrodeposited CuInSe2-based solar cells
title_sort Sulfurization of electrodeposited CuInSe2-based solar cells
dc.creator.none.fl_str_mv Valdes, Matias Hernan
Goossens, Alain
Vazquez, Marcela Vivian
author Valdes, Matias Hernan
author_facet Valdes, Matias Hernan
Goossens, Alain
Vazquez, Marcela Vivian
author_role author
author2 Goossens, Alain
Vazquez, Marcela Vivian
author2_role author
author
dc.subject.none.fl_str_mv Chalcogenides
Annealing
Semiconductors
Electrical Properties
topic Chalcogenides
Annealing
Semiconductors
Electrical Properties
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv CuInSe2 (CISe) thin films have been prepared by single-step electrodeposition on top of TCO/TiO2 and TCO/TiO2/In2S3 coated electrodes. TiO2 and In2S3 have been deposited by spray–pyrolysis. The electrodeposition step is studied using cyclic voltammetry in an acidic electrolyte. Electrodeposited CISe is then subjected to two different thermal treatments. The first treatment is an annealing step under argon atmosphere, carried out to enhance the crystallinity of the film. The second consists of a sulfurization process, where sulfur is vaporized and mixed with the argon flux, leading to substantial changes in the composition of the chalcogenide. The crystallinity, morphology and stoichiometry of the annealed films are characterized by XRD, micro-Raman spectroscopy and SEM/EDX. Raman spectra and EDX show an almost complete replacement of the Se atoms by S atoms. Etching the films in KCN solution is a key step, enabling a final adjustment in the stoichiometry. The incorporation of In2S3 buffer layer in TiO2/CuIn(SeS)2 solar cells produces a marked improvement in the cell efficiency. Despite this improvement, the values of Jsc and the fill factor (FF) are relatively low, showing efficiencies below 1%, most likely associated to the resistances present in the multi-layered cell.
Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Goossens, Alain. Delft University of Technology; Países Bajos
Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
description CuInSe2 (CISe) thin films have been prepared by single-step electrodeposition on top of TCO/TiO2 and TCO/TiO2/In2S3 coated electrodes. TiO2 and In2S3 have been deposited by spray–pyrolysis. The electrodeposition step is studied using cyclic voltammetry in an acidic electrolyte. Electrodeposited CISe is then subjected to two different thermal treatments. The first treatment is an annealing step under argon atmosphere, carried out to enhance the crystallinity of the film. The second consists of a sulfurization process, where sulfur is vaporized and mixed with the argon flux, leading to substantial changes in the composition of the chalcogenide. The crystallinity, morphology and stoichiometry of the annealed films are characterized by XRD, micro-Raman spectroscopy and SEM/EDX. Raman spectra and EDX show an almost complete replacement of the Se atoms by S atoms. Etching the films in KCN solution is a key step, enabling a final adjustment in the stoichiometry. The incorporation of In2S3 buffer layer in TiO2/CuIn(SeS)2 solar cells produces a marked improvement in the cell efficiency. Despite this improvement, the values of Jsc and the fill factor (FF) are relatively low, showing efficiencies below 1%, most likely associated to the resistances present in the multi-layered cell.
publishDate 2010
dc.date.none.fl_str_mv 2010-09-20
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/76569
Valdes, Matias Hernan; Goossens, Alain; Vazquez, Marcela Vivian; Sulfurization of electrodeposited CuInSe2-based solar cells; Elsevier Science Sa; Materials Chemistry and Physics; 125; 3; 20-9-2010; 860-865
0254-0584
CONICET Digital
CONICET
url http://hdl.handle.net/11336/76569
identifier_str_mv Valdes, Matias Hernan; Goossens, Alain; Vazquez, Marcela Vivian; Sulfurization of electrodeposited CuInSe2-based solar cells; Elsevier Science Sa; Materials Chemistry and Physics; 125; 3; 20-9-2010; 860-865
0254-0584
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0254058410007595
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.matchemphys.2010.09.032
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269365930557440
score 13.13397

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