Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale

Autores
Ferreyra, Cristian Daniel; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique; Bengió, Silvina; Lecourt, J.; Lüders, U.; Rubi, Diego
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide - Ta-oxide - and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple - analogic - intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; Argentina
Fil: Sánchez, M.J.. Comisión Nacional de Energía Atómica; Argentina
Fil: Aguirre, Myriam. Universidad de Zaragoza; España
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Bengió, Silvina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina
Fil: Lecourt, J.. Centre National de la Recherche Scientifique; Francia
Fil: Lüders, U.. Centre National de la Recherche Scientifique; Francia
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; Argentina
Materia
MEMRISTIVE SYSTEMS
OXIDE ELECTRONICS
OXYGEN VACANCIES DYNAMICS AT THE NANOSCALE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/123898
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscaleFerreyra, Cristian DanielSánchez, M.J.Aguirre, MyriamAcha, Carlos EnriqueBengió, SilvinaLecourt, J.Lüders, U.Rubi, DiegoMEMRISTIVE SYSTEMSOXIDE ELECTRONICSOXYGEN VACANCIES DYNAMICS AT THE NANOSCALEhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide - Ta-oxide - and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple - analogic - intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; ArgentinaFil: Sánchez, M.J.. Comisión Nacional de Energía Atómica; ArgentinaFil: Aguirre, Myriam. Universidad de Zaragoza; EspañaFil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Bengió, Silvina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; ArgentinaFil: Lecourt, J.. Centre National de la Recherche Scientifique; FranciaFil: Lüders, U.. Centre National de la Recherche Scientifique; FranciaFil: Rubi, Diego. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; ArgentinaIOP Publishing2020-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/123898Ferreyra, Cristian Daniel; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique; Bengió, Silvina; et al.; Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale; IOP Publishing; Nanotechnology; 31; 15; 1-2020; 1-240957-4484CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-6528/ab6476info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6528/ab6476info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:54:54Zoai:ri.conicet.gov.ar:11336/123898instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:54:54.986CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
title Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
spellingShingle Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
Ferreyra, Cristian Daniel
MEMRISTIVE SYSTEMS
OXIDE ELECTRONICS
OXYGEN VACANCIES DYNAMICS AT THE NANOSCALE
title_short Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
title_full Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
title_fullStr Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
title_full_unstemmed Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
title_sort Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
dc.creator.none.fl_str_mv Ferreyra, Cristian Daniel
Sánchez, M.J.
Aguirre, Myriam
Acha, Carlos Enrique
Bengió, Silvina
Lecourt, J.
Lüders, U.
Rubi, Diego
author Ferreyra, Cristian Daniel
author_facet Ferreyra, Cristian Daniel
Sánchez, M.J.
Aguirre, Myriam
Acha, Carlos Enrique
Bengió, Silvina
Lecourt, J.
Lüders, U.
Rubi, Diego
author_role author
author2 Sánchez, M.J.
Aguirre, Myriam
Acha, Carlos Enrique
Bengió, Silvina
Lecourt, J.
Lüders, U.
Rubi, Diego
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv MEMRISTIVE SYSTEMS
OXIDE ELECTRONICS
OXYGEN VACANCIES DYNAMICS AT THE NANOSCALE
topic MEMRISTIVE SYSTEMS
OXIDE ELECTRONICS
OXYGEN VACANCIES DYNAMICS AT THE NANOSCALE
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide - Ta-oxide - and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple - analogic - intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; Argentina
Fil: Sánchez, M.J.. Comisión Nacional de Energía Atómica; Argentina
Fil: Aguirre, Myriam. Universidad de Zaragoza; España
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Bengió, Silvina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina
Fil: Lecourt, J.. Centre National de la Recherche Scientifique; Francia
Fil: Lüders, U.. Centre National de la Recherche Scientifique; Francia
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; Argentina
description The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta2O5-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta2O5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide - Ta-oxide - and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple - analogic - intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.
publishDate 2020
dc.date.none.fl_str_mv 2020-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/123898
Ferreyra, Cristian Daniel; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique; Bengió, Silvina; et al.; Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale; IOP Publishing; Nanotechnology; 31; 15; 1-2020; 1-24
0957-4484
CONICET Digital
CONICET
url http://hdl.handle.net/11336/123898
identifier_str_mv Ferreyra, Cristian Daniel; Sánchez, M.J.; Aguirre, Myriam; Acha, Carlos Enrique; Bengió, Silvina; et al.; Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale; IOP Publishing; Nanotechnology; 31; 15; 1-2020; 1-24
0957-4484
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/1361-6528/ab6476
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6528/ab6476
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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