Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
- Autores
- Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José
- Año de publicación
- 2019
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.
Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Gay, Ralph. No especifíca;
Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina - Materia
-
MEMRISTORS
OXYGEN VACANCIES DYNAMIC
REDOX INTERFACES - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/121694
Ver los metadatos del registro completo
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Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive responseFerreyra, Cristian DanielRoman Acevedo, Wilson StibensGay, RalphRubi, DiegoSánchez, María JoséMEMRISTORSOXYGEN VACANCIES DYNAMICREDOX INTERFACEShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Gay, Ralph. No especifíca;Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaIOP Publishing2019-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/121694Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-110022-37271361-6463CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/ab46d3info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/ab46d3info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:12:00Zoai:ri.conicet.gov.ar:11336/121694instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:12:00.304CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
title |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
spellingShingle |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response Ferreyra, Cristian Daniel MEMRISTORS OXYGEN VACANCIES DYNAMIC REDOX INTERFACES |
title_short |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
title_full |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
title_fullStr |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
title_full_unstemmed |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
title_sort |
Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response |
dc.creator.none.fl_str_mv |
Ferreyra, Cristian Daniel Roman Acevedo, Wilson Stibens Gay, Ralph Rubi, Diego Sánchez, María José |
author |
Ferreyra, Cristian Daniel |
author_facet |
Ferreyra, Cristian Daniel Roman Acevedo, Wilson Stibens Gay, Ralph Rubi, Diego Sánchez, María José |
author_role |
author |
author2 |
Roman Acevedo, Wilson Stibens Gay, Ralph Rubi, Diego Sánchez, María José |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
MEMRISTORS OXYGEN VACANCIES DYNAMIC REDOX INTERFACES |
topic |
MEMRISTORS OXYGEN VACANCIES DYNAMIC REDOX INTERFACES |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices. Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina Fil: Gay, Ralph. No especifíca; Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina Fil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina |
description |
Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/121694 Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-11 0022-3727 1361-6463 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/121694 |
identifier_str_mv |
Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-11 0022-3727 1361-6463 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/ab46d3 info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/ab46d3 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
IOP Publishing |
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IOP Publishing |
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reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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13.070432 |