Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response

Autores
Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José
Año de publicación
2019
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.
Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Gay, Ralph. No especifíca;
Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Materia
MEMRISTORS
OXYGEN VACANCIES DYNAMIC
REDOX INTERFACES
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/121694
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive responseFerreyra, Cristian DanielRoman Acevedo, Wilson StibensGay, RalphRubi, DiegoSánchez, María JoséMEMRISTORSOXYGEN VACANCIES DYNAMICREDOX INTERFACEShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Gay, Ralph. No especifíca;Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaFil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; ArgentinaIOP Publishing2019-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/121694Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-110022-37271361-6463CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/ab46d3info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/ab46d3info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:41:55Zoai:ri.conicet.gov.ar:11336/121694instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:41:56.079CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
title Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
spellingShingle Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
Ferreyra, Cristian Daniel
MEMRISTORS
OXYGEN VACANCIES DYNAMIC
REDOX INTERFACES
title_short Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
title_full Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
title_fullStr Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
title_full_unstemmed Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
title_sort Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response
dc.creator.none.fl_str_mv Ferreyra, Cristian Daniel
Roman Acevedo, Wilson Stibens
Gay, Ralph
Rubi, Diego
Sánchez, María José
author Ferreyra, Cristian Daniel
author_facet Ferreyra, Cristian Daniel
Roman Acevedo, Wilson Stibens
Gay, Ralph
Rubi, Diego
Sánchez, María José
author_role author
author2 Roman Acevedo, Wilson Stibens
Gay, Ralph
Rubi, Diego
Sánchez, María José
author2_role author
author
author
author
dc.subject.none.fl_str_mv MEMRISTORS
OXYGEN VACANCIES DYNAMIC
REDOX INTERFACES
topic MEMRISTORS
OXYGEN VACANCIES DYNAMIC
REDOX INTERFACES
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.
Fil: Ferreyra, Cristian Daniel. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Gay, Ralph. No especifíca;
Fil: Rubi, Diego. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
Fil: Sánchez, María José. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. - Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología; Argentina
description Redox-based memristive devices are among the alternatives for the next generation of non-volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing de- vices. Nowadays it is well established that the motion of oxygen vacancies at the nanoscale is the key mechanism to reversibly switch metal/insulator/metal structures from insulating to con- ducting, i.e. to accomplish the resistive switching effect. The control of oxygen vacancies dynamics has direct effects on the resistance changes, and therefore on different factors of memristive devices such as switching speed, retention, endurance or energy consumption. Advances in this direction demand not only experimental techniques that allow measuring oxygen vacancies profiles, but also theoretical studies that shed light on the involved mechanisms. Along these goals, we analize the oxygen vacancies dynamics in redox interfaces formed when an oxidizable metallic electrode is in contact with the insulating oxide. We show how the transfer of oxygen vacancies can be manipulated by using different electrical stimuli protocols that allow optimizing device figures such as ON/OFF ratio or writing energy dissipation. Analytical expressions for both high and low resistance states are derived in terms of total oxygen vacancies transferred at the interface. Our predictions are validated with experiments performed in Ti/La 1/3 Ca 2/3 MnO 3 redox memristive devices.
publishDate 2019
dc.date.none.fl_str_mv 2019-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/121694
Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-11
0022-3727
1361-6463
CONICET Digital
CONICET
url http://hdl.handle.net/11336/121694
identifier_str_mv Ferreyra, Cristian Daniel; Roman Acevedo, Wilson Stibens; Gay, Ralph; Rubi, Diego; Sánchez, María José; Oxygen vacancies dynamics in redox-based interfaces: Tailoring the memristive response; IOP Publishing; Journal of Physics D: Applied Physics; 53; 1; 9-2019; 1-11
0022-3727
1361-6463
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/ab46d3
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/ab46d3
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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