Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties
- Autores
- Gainza, Javier; Guiñazú, Orlando Nicolás; Cesped, Eva; Falcon, Horacio; Martínez, Jose Luis; Alonso, José Antonio
- Año de publicación
- 2023
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Indium thiospinels (AIn2S4, A= transition metals) have attracted significant attention due to their potential for manipulating magnetic and optoelectronic properties through changes in chemical composition. Defined in the cubic space group Fd-3 m (No. 227), the crystal structure consists of a framework of edge-sharing InS6 octahedra (Oh symmetry), with A cations coordinated tetrahedrally (Td symmetry) to sulfur. In this study, we describe a rapid high-pressure synthetic method (3.5 GPa) to prepare MnIn2S4 polycrystalline samples, with tunable degree of inversion (λ) or Mn-In antisite, meaning that some Mn occupy the octahedral sites and some In atoms are located at the tetrahedral positions. We found that λ closely depends on the synthesis temperature. Notably, therefinement of the crystal structure from X-ray diffraction data reveals positive correlations between the inversion degree and different properties such as the band gap, expanding its spectral coverage, and the magnetic behavior, depending on the occupancy rate of the octahedral or tetrahedral sites by the strongly magnetic Mn2+ ions. Whereas the paramagnetic behavior is not affected by the inversion degree, for higher λ values (30%<λ < 38%), achieved at synthesis temperatures as high of 800ºC, the random distribution of Mn2+ ions between Td and Oh sites accounts for a spin-glass state with a clear cusp in the magnetic susceptibility (ac and dc), based on the strong short-range antiferromagnetic interactions.
Fil: Gainza, Javier. Instituto de Ciencia de Materiales de Madrid; España
Fil: Guiñazú, Orlando Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; Argentina
Fil: Cesped, Eva. Instituto de Ciencia de Materiales de Madrid; España
Fil: Falcon, Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; Argentina
Fil: Martínez, Jose Luis. Instituto de Ciencia de Materiales de Madrid; España
Fil: Alonso, José Antonio. Instituto de Ciencia de Materiales de Madrid; España - Materia
-
Thiospinel
InMn2S4
Inversion degree
Band gap
Magnetic interactions - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/244282
Ver los metadatos del registro completo
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Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic propertiesGainza, JavierGuiñazú, Orlando NicolásCesped, EvaFalcon, HoracioMartínez, Jose LuisAlonso, José AntonioThiospinelInMn2S4Inversion degreeBand gapMagnetic interactionshttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1Indium thiospinels (AIn2S4, A= transition metals) have attracted significant attention due to their potential for manipulating magnetic and optoelectronic properties through changes in chemical composition. Defined in the cubic space group Fd-3 m (No. 227), the crystal structure consists of a framework of edge-sharing InS6 octahedra (Oh symmetry), with A cations coordinated tetrahedrally (Td symmetry) to sulfur. In this study, we describe a rapid high-pressure synthetic method (3.5 GPa) to prepare MnIn2S4 polycrystalline samples, with tunable degree of inversion (λ) or Mn-In antisite, meaning that some Mn occupy the octahedral sites and some In atoms are located at the tetrahedral positions. We found that λ closely depends on the synthesis temperature. Notably, therefinement of the crystal structure from X-ray diffraction data reveals positive correlations between the inversion degree and different properties such as the band gap, expanding its spectral coverage, and the magnetic behavior, depending on the occupancy rate of the octahedral or tetrahedral sites by the strongly magnetic Mn2+ ions. Whereas the paramagnetic behavior is not affected by the inversion degree, for higher λ values (30%<λ < 38%), achieved at synthesis temperatures as high of 800ºC, the random distribution of Mn2+ ions between Td and Oh sites accounts for a spin-glass state with a clear cusp in the magnetic susceptibility (ac and dc), based on the strong short-range antiferromagnetic interactions.Fil: Gainza, Javier. Instituto de Ciencia de Materiales de Madrid; EspañaFil: Guiñazú, Orlando Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; ArgentinaFil: Cesped, Eva. Instituto de Ciencia de Materiales de Madrid; EspañaFil: Falcon, Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; ArgentinaFil: Martínez, Jose Luis. Instituto de Ciencia de Materiales de Madrid; EspañaFil: Alonso, José Antonio. Instituto de Ciencia de Materiales de Madrid; EspañaElsevier Science SA2023-12-25info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/244282Gainza, Javier; Guiñazú, Orlando Nicolás; Cesped, Eva; Falcon, Horacio; Martínez, Jose Luis; et al.; Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties; Elsevier Science SA; Journal of Alloys and Compounds; 969; 172413; 25-12-2023; 1-90925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2023.172413info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925838823037167info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-02-06T12:31:32Zoai:ri.conicet.gov.ar:11336/244282instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-02-06 12:31:32.389CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| title |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| spellingShingle |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties Gainza, Javier Thiospinel InMn2S4 Inversion degree Band gap Magnetic interactions |
| title_short |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| title_full |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| title_fullStr |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| title_full_unstemmed |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| title_sort |
Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties |
| dc.creator.none.fl_str_mv |
Gainza, Javier Guiñazú, Orlando Nicolás Cesped, Eva Falcon, Horacio Martínez, Jose Luis Alonso, José Antonio |
| author |
Gainza, Javier |
| author_facet |
Gainza, Javier Guiñazú, Orlando Nicolás Cesped, Eva Falcon, Horacio Martínez, Jose Luis Alonso, José Antonio |
| author_role |
author |
| author2 |
Guiñazú, Orlando Nicolás Cesped, Eva Falcon, Horacio Martínez, Jose Luis Alonso, José Antonio |
| author2_role |
author author author author author |
| dc.subject.none.fl_str_mv |
Thiospinel InMn2S4 Inversion degree Band gap Magnetic interactions |
| topic |
Thiospinel InMn2S4 Inversion degree Band gap Magnetic interactions |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
Indium thiospinels (AIn2S4, A= transition metals) have attracted significant attention due to their potential for manipulating magnetic and optoelectronic properties through changes in chemical composition. Defined in the cubic space group Fd-3 m (No. 227), the crystal structure consists of a framework of edge-sharing InS6 octahedra (Oh symmetry), with A cations coordinated tetrahedrally (Td symmetry) to sulfur. In this study, we describe a rapid high-pressure synthetic method (3.5 GPa) to prepare MnIn2S4 polycrystalline samples, with tunable degree of inversion (λ) or Mn-In antisite, meaning that some Mn occupy the octahedral sites and some In atoms are located at the tetrahedral positions. We found that λ closely depends on the synthesis temperature. Notably, therefinement of the crystal structure from X-ray diffraction data reveals positive correlations between the inversion degree and different properties such as the band gap, expanding its spectral coverage, and the magnetic behavior, depending on the occupancy rate of the octahedral or tetrahedral sites by the strongly magnetic Mn2+ ions. Whereas the paramagnetic behavior is not affected by the inversion degree, for higher λ values (30%<λ < 38%), achieved at synthesis temperatures as high of 800ºC, the random distribution of Mn2+ ions between Td and Oh sites accounts for a spin-glass state with a clear cusp in the magnetic susceptibility (ac and dc), based on the strong short-range antiferromagnetic interactions. Fil: Gainza, Javier. Instituto de Ciencia de Materiales de Madrid; España Fil: Guiñazú, Orlando Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; Argentina Fil: Cesped, Eva. Instituto de Ciencia de Materiales de Madrid; España Fil: Falcon, Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Centro de Investigación y Tecnología Química. Universidad Tecnológica Nacional. Facultad Regional Córdoba. Centro de Investigación y Tecnología Química; Argentina Fil: Martínez, Jose Luis. Instituto de Ciencia de Materiales de Madrid; España Fil: Alonso, José Antonio. Instituto de Ciencia de Materiales de Madrid; España |
| description |
Indium thiospinels (AIn2S4, A= transition metals) have attracted significant attention due to their potential for manipulating magnetic and optoelectronic properties through changes in chemical composition. Defined in the cubic space group Fd-3 m (No. 227), the crystal structure consists of a framework of edge-sharing InS6 octahedra (Oh symmetry), with A cations coordinated tetrahedrally (Td symmetry) to sulfur. In this study, we describe a rapid high-pressure synthetic method (3.5 GPa) to prepare MnIn2S4 polycrystalline samples, with tunable degree of inversion (λ) or Mn-In antisite, meaning that some Mn occupy the octahedral sites and some In atoms are located at the tetrahedral positions. We found that λ closely depends on the synthesis temperature. Notably, therefinement of the crystal structure from X-ray diffraction data reveals positive correlations between the inversion degree and different properties such as the band gap, expanding its spectral coverage, and the magnetic behavior, depending on the occupancy rate of the octahedral or tetrahedral sites by the strongly magnetic Mn2+ ions. Whereas the paramagnetic behavior is not affected by the inversion degree, for higher λ values (30%<λ < 38%), achieved at synthesis temperatures as high of 800ºC, the random distribution of Mn2+ ions between Td and Oh sites accounts for a spin-glass state with a clear cusp in the magnetic susceptibility (ac and dc), based on the strong short-range antiferromagnetic interactions. |
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2023 |
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2023-12-25 |
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info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
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http://hdl.handle.net/11336/244282 Gainza, Javier; Guiñazú, Orlando Nicolás; Cesped, Eva; Falcon, Horacio; Martínez, Jose Luis; et al.; Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties; Elsevier Science SA; Journal of Alloys and Compounds; 969; 172413; 25-12-2023; 1-9 0925-8388 CONICET Digital CONICET |
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http://hdl.handle.net/11336/244282 |
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Gainza, Javier; Guiñazú, Orlando Nicolás; Cesped, Eva; Falcon, Horacio; Martínez, Jose Luis; et al.; Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties; Elsevier Science SA; Journal of Alloys and Compounds; 969; 172413; 25-12-2023; 1-9 0925-8388 CONICET Digital CONICET |
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eng |
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