Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations

Autores
Cedola, Ariel Pablo; Gioannini, Mariangela; Cappelluti, Federica; Cappelletti, Marcelo Ángel; Peltzer y Blanca, Eitel Leopoldo
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies.
Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
Fil: Gioannini, Mariangela. Politecnico di Torino; Italia
Fil: Cappelluti, Federica. Politecnico di Torino; Italia
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
Materia
Gallium Arsenide
Quantum Dots
Photovoltaic Cells
Photonic Band Gap
Photoconductivity
Radiative Recombination
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/32942
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/32942
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical SimulationsCedola, Ariel PabloGioannini, MariangelaCappelluti, FedericaCappelletti, Marcelo ÁngelPeltzer y Blanca, Eitel LeopoldoGallium ArsenideQuantum DotsPhotovoltaic CellsPhotonic Band GapPhotoconductivityRadiative Recombinationhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies.Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; ArgentinaFil: Gioannini, Mariangela. Politecnico di Torino; ItaliaFil: Cappelluti, Federica. Politecnico di Torino; ItaliaFil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; ArgentinaInstitute of Electrical and Electronics Engineers2014-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/32942Cedola, Ariel Pablo; Cappelletti, Marcelo Ángel; Gioannini, Mariangela; Peltzer y Blanca, Eitel Leopoldo; Cappelluti, Federica; Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 12; 5; 8-2014; 922-9271548-0992CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2014.6872907info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6872907/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-02-06T12:10:16Zoai:ri.conicet.gov.ar:11336/32942instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-02-06 12:10:16.906CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
title Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
spellingShingle Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
Cedola, Ariel Pablo
Gallium Arsenide
Quantum Dots
Photovoltaic Cells
Photonic Band Gap
Photoconductivity
Radiative Recombination
title_short Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
title_full Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
title_fullStr Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
title_full_unstemmed Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
title_sort Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations
dc.creator.none.fl_str_mv Cedola, Ariel Pablo
Gioannini, Mariangela
Cappelluti, Federica
Cappelletti, Marcelo Ángel
Peltzer y Blanca, Eitel Leopoldo
author Cedola, Ariel Pablo
author_facet Cedola, Ariel Pablo
Gioannini, Mariangela
Cappelluti, Federica
Cappelletti, Marcelo Ángel
Peltzer y Blanca, Eitel Leopoldo
author_role author
author2 Gioannini, Mariangela
Cappelluti, Federica
Cappelletti, Marcelo Ángel
Peltzer y Blanca, Eitel Leopoldo
author2_role author
author
author
author
dc.subject.none.fl_str_mv Gallium Arsenide
Quantum Dots
Photovoltaic Cells
Photonic Band Gap
Photoconductivity
Radiative Recombination
topic Gallium Arsenide
Quantum Dots
Photovoltaic Cells
Photonic Band Gap
Photoconductivity
Radiative Recombination
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies.
Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
Fil: Gioannini, Mariangela. Politecnico di Torino; Italia
Fil: Cappelluti, Federica. Politecnico di Torino; Italia
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de la Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina
description This paper presents a theoretical study about quantum dot solar cells by means of numerical simulations, considering different doping levels in the intrinsic region of the cells, with the aim of evaluating the effect on the device's power conversion efficiency. Results of simulations performed over GaAs solar cells with InAs quantum dots, based on two different fabrication processes, are reported. The donor doping density in the intrinsic region was ranged from 1013 to 1017 cm-3. It is shown that, for a doping level of 7×1015 cm-3, the contribution of larger sized quantum dots to the photocurrent is increased by 50%, a very promising result in the search for new designs with higher efficiencies.
publishDate 2014
dc.date.none.fl_str_mv 2014-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/32942
Cedola, Ariel Pablo; Cappelletti, Marcelo Ángel; Gioannini, Mariangela; Peltzer y Blanca, Eitel Leopoldo; Cappelluti, Federica; Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 12; 5; 8-2014; 922-927
1548-0992
CONICET Digital
CONICET
url http://hdl.handle.net/11336/32942
identifier_str_mv Cedola, Ariel Pablo; Cappelletti, Marcelo Ángel; Gioannini, Mariangela; Peltzer y Blanca, Eitel Leopoldo; Cappelluti, Federica; Study of Photocurrent Enhancement Dependence on Background Doping in Quantum Dot Solar Cells by Numerical Simulations; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 12; 5; 8-2014; 922-927
1548-0992
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2014.6872907
info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6872907/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.115731

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