Simulation of Single Crystalline CdZnTe Solidification Process
- Autores
- Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando
- Año de publicación
- 2014
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.
Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; Argentina
Fil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; Argentina
Fil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
Fil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; Argentina - Materia
-
CdZnTe
Bridgman method
numerical simulation
finite element method
single crystal growth
II-VI Semiconductors - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/9765
Ver los metadatos del registro completo
id |
CONICETDig_7a25f33b7c7c11062f004ecaa497c6a5 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/9765 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Simulation of Single Crystalline CdZnTe Solidification ProcessMartinez, Ana MariaRosenberger, Mario RobertoTrigubo, Alicia BeatrizD'elia, Raul LuisHeredia, Eduardo ArmandoCdZnTeBridgman methodnumerical simulationfinite element methodsingle crystal growthII-VI Semiconductorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; ArgentinaFil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; ArgentinaFil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; ArgentinaFil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; ArgentinaFil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; ArgentinaScience and Education Publishing2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/9765Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-142333-4436enginfo:eu-repo/semantics/altIdentifier/url/http://pubs.sciepub.com/jmpc/2/1/2/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:14:11Zoai:ri.conicet.gov.ar:11336/9765instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:14:11.922CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Simulation of Single Crystalline CdZnTe Solidification Process |
title |
Simulation of Single Crystalline CdZnTe Solidification Process |
spellingShingle |
Simulation of Single Crystalline CdZnTe Solidification Process Martinez, Ana Maria CdZnTe Bridgman method numerical simulation finite element method single crystal growth II-VI Semiconductors |
title_short |
Simulation of Single Crystalline CdZnTe Solidification Process |
title_full |
Simulation of Single Crystalline CdZnTe Solidification Process |
title_fullStr |
Simulation of Single Crystalline CdZnTe Solidification Process |
title_full_unstemmed |
Simulation of Single Crystalline CdZnTe Solidification Process |
title_sort |
Simulation of Single Crystalline CdZnTe Solidification Process |
dc.creator.none.fl_str_mv |
Martinez, Ana Maria Rosenberger, Mario Roberto Trigubo, Alicia Beatriz D'elia, Raul Luis Heredia, Eduardo Armando |
author |
Martinez, Ana Maria |
author_facet |
Martinez, Ana Maria Rosenberger, Mario Roberto Trigubo, Alicia Beatriz D'elia, Raul Luis Heredia, Eduardo Armando |
author_role |
author |
author2 |
Rosenberger, Mario Roberto Trigubo, Alicia Beatriz D'elia, Raul Luis Heredia, Eduardo Armando |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
CdZnTe Bridgman method numerical simulation finite element method single crystal growth II-VI Semiconductors |
topic |
CdZnTe Bridgman method numerical simulation finite element method single crystal growth II-VI Semiconductors |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot. Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; Argentina Fil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; Argentina Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; Argentina Fil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina Fil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; Argentina |
description |
Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-01 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/9765 Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-14 2333-4436 |
url |
http://hdl.handle.net/11336/9765 |
identifier_str_mv |
Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-14 2333-4436 |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://pubs.sciepub.com/jmpc/2/1/2/ |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Science and Education Publishing |
publisher.none.fl_str_mv |
Science and Education Publishing |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844614067113689088 |
score |
13.070432 |