Simulation of Single Crystalline CdZnTe Solidification Process

Autores
Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.
Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; Argentina
Fil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; Argentina
Fil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
Fil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; Argentina
Materia
CdZnTe
Bridgman method
numerical simulation
finite element method
single crystal growth
II-VI Semiconductors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/9765
Acceder
id CONICETDig_7a25f33b7c7c11062f004ecaa497c6a5
oai_identifier_str oai:ri.conicet.gov.ar:11336/9765
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Simulation of Single Crystalline CdZnTe Solidification ProcessMartinez, Ana MariaRosenberger, Mario RobertoTrigubo, Alicia BeatrizD'elia, Raul LuisHeredia, Eduardo ArmandoCdZnTeBridgman methodnumerical simulationfinite element methodsingle crystal growthII-VI Semiconductorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; ArgentinaFil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; ArgentinaFil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; ArgentinaFil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; ArgentinaFil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; ArgentinaScience and Education Publishing2014-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/9765Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-142333-4436enginfo:eu-repo/semantics/altIdentifier/url/http://pubs.sciepub.com/jmpc/2/1/2/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:44:14Zoai:ri.conicet.gov.ar:11336/9765instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:44:14.589CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Simulation of Single Crystalline CdZnTe Solidification Process
title Simulation of Single Crystalline CdZnTe Solidification Process
spellingShingle Simulation of Single Crystalline CdZnTe Solidification Process
Martinez, Ana Maria
CdZnTe
Bridgman method
numerical simulation
finite element method
single crystal growth
II-VI Semiconductors
title_short Simulation of Single Crystalline CdZnTe Solidification Process
title_full Simulation of Single Crystalline CdZnTe Solidification Process
title_fullStr Simulation of Single Crystalline CdZnTe Solidification Process
title_full_unstemmed Simulation of Single Crystalline CdZnTe Solidification Process
title_sort Simulation of Single Crystalline CdZnTe Solidification Process
dc.creator.none.fl_str_mv Martinez, Ana Maria
Rosenberger, Mario Roberto
Trigubo, Alicia Beatriz
D'elia, Raul Luis
Heredia, Eduardo Armando
author Martinez, Ana Maria
author_facet Martinez, Ana Maria
Rosenberger, Mario Roberto
Trigubo, Alicia Beatriz
D'elia, Raul Luis
Heredia, Eduardo Armando
author_role author
author2 Rosenberger, Mario Roberto
Trigubo, Alicia Beatriz
D'elia, Raul Luis
Heredia, Eduardo Armando
author2_role author
author
author
author
dc.subject.none.fl_str_mv CdZnTe
Bridgman method
numerical simulation
finite element method
single crystal growth
II-VI Semiconductors
topic CdZnTe
Bridgman method
numerical simulation
finite element method
single crystal growth
II-VI Semiconductors
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.
Fil: Martinez, Ana Maria. Provincia de Misiones. Comite de Desarrollo E Innovacion Tecnologica; Argentina
Fil: Rosenberger, Mario Roberto. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Centro Cientifico Tecnológico Nordeste. Instituto de Materiales de Misiones; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégicos Para la Defensa; Argentina. Universidad Tecnologica Nacional; Argentina
Fil: D'elia, Raul Luis. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
Fil: Heredia, Eduardo Armando. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas Para la Defensa; Argentina
description Single crystals of Cd1-xZnxTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.
publishDate 2014
dc.date.none.fl_str_mv 2014-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/9765
Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-14
2333-4436
url http://hdl.handle.net/11336/9765
identifier_str_mv Martinez, Ana Maria; Rosenberger, Mario Roberto; Trigubo, Alicia Beatriz; D'elia, Raul Luis; Heredia, Eduardo Armando; Simulation of Single Crystalline CdZnTe Solidification Process; Science and Education Publishing; Journal of Materials Physics an Chemistry; 2; 1; 1-2014; 9-14
2333-4436
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://pubs.sciepub.com/jmpc/2/1/2/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Science and Education Publishing
publisher.none.fl_str_mv Science and Education Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782136591319040
score 12.982451

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