Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
- Autores
- Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.
- Año de publicación
- 2018
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.
Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; India - Materia
-
ABINIT
BAND STRUCTURE CALCULATIONS
REFRACTIVE INDEX
RESIDUAL STRESS
THIN FILMS - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/85863
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Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphideZandalazini, Carlos IvanNavarro Sánchez, Jorge LuisAlbanesi, Eduardo AldoGupta, YashikaArun, P.ABINITBAND STRUCTURE CALCULATIONSREFRACTIVE INDEXRESIDUAL STRESSTHIN FILMShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; IndiaElsevier Science Sa2018-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85863Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-180925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://linkinghub.elsevier.com/retrieve/pii/S0925838818307515info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2018.02.262info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:49:40Zoai:ri.conicet.gov.ar:11336/85863instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:49:41.126CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
title |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
spellingShingle |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide Zandalazini, Carlos Ivan ABINIT BAND STRUCTURE CALCULATIONS REFRACTIVE INDEX RESIDUAL STRESS THIN FILMS |
title_short |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
title_full |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
title_fullStr |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
title_full_unstemmed |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
title_sort |
Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide |
dc.creator.none.fl_str_mv |
Zandalazini, Carlos Ivan Navarro Sánchez, Jorge Luis Albanesi, Eduardo Aldo Gupta, Yashika Arun, P. |
author |
Zandalazini, Carlos Ivan |
author_facet |
Zandalazini, Carlos Ivan Navarro Sánchez, Jorge Luis Albanesi, Eduardo Aldo Gupta, Yashika Arun, P. |
author_role |
author |
author2 |
Navarro Sánchez, Jorge Luis Albanesi, Eduardo Aldo Gupta, Yashika Arun, P. |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
ABINIT BAND STRUCTURE CALCULATIONS REFRACTIVE INDEX RESIDUAL STRESS THIN FILMS |
topic |
ABINIT BAND STRUCTURE CALCULATIONS REFRACTIVE INDEX RESIDUAL STRESS THIN FILMS |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results. Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina Fil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina Fil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina Fil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; India |
description |
Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-05 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/85863 Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-18 0925-8388 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/85863 |
identifier_str_mv |
Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-18 0925-8388 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://linkinghub.elsevier.com/retrieve/pii/S0925838818307515 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2018.02.262 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
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dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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13.070432 |