Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide

Autores
Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.
Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; India
Materia
ABINIT
BAND STRUCTURE CALCULATIONS
REFRACTIVE INDEX
RESIDUAL STRESS
THIN FILMS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/85863

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network_name_str CONICET Digital (CONICET)
spelling Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphideZandalazini, Carlos IvanNavarro Sánchez, Jorge LuisAlbanesi, Eduardo AldoGupta, YashikaArun, P.ABINITBAND STRUCTURE CALCULATIONSREFRACTIVE INDEXRESIDUAL STRESSTHIN FILMShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; IndiaElsevier Science Sa2018-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/85863Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-180925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://linkinghub.elsevier.com/retrieve/pii/S0925838818307515info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2018.02.262info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:49:40Zoai:ri.conicet.gov.ar:11336/85863instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:49:41.126CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
title Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
spellingShingle Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
Zandalazini, Carlos Ivan
ABINIT
BAND STRUCTURE CALCULATIONS
REFRACTIVE INDEX
RESIDUAL STRESS
THIN FILMS
title_short Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
title_full Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
title_fullStr Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
title_full_unstemmed Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
title_sort Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide
dc.creator.none.fl_str_mv Zandalazini, Carlos Ivan
Navarro Sánchez, Jorge Luis
Albanesi, Eduardo Aldo
Gupta, Yashika
Arun, P.
author Zandalazini, Carlos Ivan
author_facet Zandalazini, Carlos Ivan
Navarro Sánchez, Jorge Luis
Albanesi, Eduardo Aldo
Gupta, Yashika
Arun, P.
author_role author
author2 Navarro Sánchez, Jorge Luis
Albanesi, Eduardo Aldo
Gupta, Yashika
Arun, P.
author2_role author
author
author
author
dc.subject.none.fl_str_mv ABINIT
BAND STRUCTURE CALCULATIONS
REFRACTIVE INDEX
RESIDUAL STRESS
THIN FILMS
topic ABINIT
BAND STRUCTURE CALCULATIONS
REFRACTIVE INDEX
RESIDUAL STRESS
THIN FILMS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.
Fil: Zandalazini, Carlos Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Navarro Sánchez, Jorge Luis. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Albanesi, Eduardo Aldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Gupta, Yashika. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Arun, P.. Material Science Research Lab, S.g.t.b. Khalsa College,; India
description Theoretical investigations were made into the band gap, band structure and optical properties of tin sulphide (SnS) crystal with C2mb symmetry. The SnS crystal with this symmetry though has many properties similar to the well documented SnS crystal with Pnma symmetry, it does exhibit some uniqueness in band structure. The purpose of this study was to verify and confirm the recent experimental results of p-SnS thin films with C2mb symmetry. The p-type conductivity in SnS films is obtained due to Tin vacancies. These defects invariably gives rise to residual stress in the crystal. Theoretical investigations allow to address the question as to which of the two factors, stress or vacancies with stress, influences the electrical and optical properties more. Results of our calculations confirm that reported p-SnS films were oriented such that the incident light of UV–visible spectroscope fell perpendicular to the ‘ab’ plane and that shallow levels appear just above the valence band edge along with a spread in the conduction band edge on introduction of defects in the lattice. The spread in conduction band edge and appearance of shallow levels manifest themselves as Urbach spread or tail in UV–visible absorption spectra, which results in a decrease in band-gap with increasing number of Tin vacancies. Calculations also show that while optical properties are essentially due to the Tin vacancies, the residual stress also affects the p-SnS optical properties. The theoretical results are in good agreement with the experimental results.
publishDate 2018
dc.date.none.fl_str_mv 2018-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/85863
Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-18
0925-8388
CONICET Digital
CONICET
url http://hdl.handle.net/11336/85863
identifier_str_mv Zandalazini, Carlos Ivan; Navarro Sánchez, Jorge Luis; Albanesi, Eduardo Aldo; Gupta, Yashika; Arun, P.; Contribution of lattice parameter and vacancies on anisotropic optical properties of tin sulphide; Elsevier Science Sa; Journal of Alloys and Compounds; 746; 5-2018; 9-18
0925-8388
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://linkinghub.elsevier.com/retrieve/pii/S0925838818307515
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2018.02.262
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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