Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models

Autores
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Marí Soucase, B.
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J 0 ) and the series resistance (R s ) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu 2 O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J 0 and R s has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J 01 and J 02 ). The power conversion efficiency (PCE) has shown to be more strongly dependent on J 02 than on J 01 . Results obtained in this work can be used to improve the manufacturing process of these devices.
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional Arturo Jauretche; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina
Fil: Marí Soucase, B.. Universidad Politécnica de Valencia; España
Materia
Genetic Algorithm
Hole Transporting Material (Htm)
One And Two-Diode Models
Parameters Extraction
Perovskite Solar Cells
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82548
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/82548
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode modelsCappelletti, Marcelo ÁngelCasas, GuillermoCedola, Ariel PabloPeltzer y Blanca, Eitel LeopoldoMarí Soucase, B.Genetic AlgorithmHole Transporting Material (Htm)One And Two-Diode ModelsParameters ExtractionPerovskite Solar CellsThe effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J 0 ) and the series resistance (R s ) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu 2 O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J 0 and R s has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J 01 and J 02 ). The power conversion efficiency (PCE) has shown to be more strongly dependent on J 02 than on J 01 . Results obtained in this work can be used to improve the manufacturing process of these devices.Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional Arturo Jauretche; ArgentinaFil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; ArgentinaFil: Cedola, Ariel Pablo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; ArgentinaFil: Marí Soucase, B.. Universidad Politécnica de Valencia; EspañaAcademic Press Ltd - Elsevier Science Ltd2018-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82548Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Marí Soucase, B.; Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models; Academic Press Ltd - Elsevier Science Ltd; Superlattices And Microstructures; 123; 11-2018; 338-3480749-6036CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.spmi.2018.09.023info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0749603618314241info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:36:05Zoai:ri.conicet.gov.ar:11336/82548instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:36:05.812CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
title Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
spellingShingle Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
Cappelletti, Marcelo Ángel
Genetic Algorithm
Hole Transporting Material (Htm)
One And Two-Diode Models
Parameters Extraction
Perovskite Solar Cells
title_short Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
title_full Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
title_fullStr Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
title_full_unstemmed Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
title_sort Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models
dc.creator.none.fl_str_mv Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
Marí Soucase, B.
author Cappelletti, Marcelo Ángel
author_facet Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
Marí Soucase, B.
author_role author
author2 Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
Marí Soucase, B.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Genetic Algorithm
Hole Transporting Material (Htm)
One And Two-Diode Models
Parameters Extraction
Perovskite Solar Cells
topic Genetic Algorithm
Hole Transporting Material (Htm)
One And Two-Diode Models
Parameters Extraction
Perovskite Solar Cells
dc.description.none.fl_txt_mv The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J 0 ) and the series resistance (R s ) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu 2 O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J 0 and R s has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J 01 and J 02 ). The power conversion efficiency (PCE) has shown to be more strongly dependent on J 02 than on J 01 . Results obtained in this work can be used to improve the manufacturing process of these devices.
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional Arturo Jauretche; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina
Fil: Marí Soucase, B.. Universidad Politécnica de Valencia; España
description The effects of the offset level and of the doping level in the perovskite layer upon both the reverse saturation current (J 0 ) and the series resistance (R s ) of p-p-n perovskite solar cells have been researched in this paper, using five different materials such as spiro-OMeTAD, Cu 2 O, CuSCN, NiO and CuI, as Hole Transporting Material (HTM). The analysis was carried out by means of the single and double-diode models of a solar cell and of genetic algorithms based on optimization technique, in order to extract the desired parameters. The minor degradation of J 0 and R s has been found for the condition offset equal to zero and for the highest doping level in p-type perovskite layer. Also, a comparison has been made of the behavior of two reverse saturation currents (J 01 and J 02 ). The power conversion efficiency (PCE) has shown to be more strongly dependent on J 02 than on J 01 . Results obtained in this work can be used to improve the manufacturing process of these devices.
publishDate 2018
dc.date.none.fl_str_mv 2018-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82548
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Marí Soucase, B.; Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models; Academic Press Ltd - Elsevier Science Ltd; Superlattices And Microstructures; 123; 11-2018; 338-348
0749-6036
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82548
identifier_str_mv Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Marí Soucase, B.; Study of the reverse saturation current and series resistance of p-p-n perovskite solar cells using the single and double-diode models; Academic Press Ltd - Elsevier Science Ltd; Superlattices And Microstructures; 123; 11-2018; 338-348
0749-6036
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.spmi.2018.09.023
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0749603618314241
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Academic Press Ltd - Elsevier Science Ltd
publisher.none.fl_str_mv Academic Press Ltd - Elsevier Science Ltd
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846082824751284224
score 13.22299

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