Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
- Autores
- Vera, Claudia M. C.; Aragon, Ricardo
- Año de publicación
- 2008
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.
Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina - Materia
-
Bismuth Molybdates
Electrical Transport
Oxygen Ionic Conduction
Photoconductivity - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/82041
Ver los metadatos del registro completo
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Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6Vera, Claudia M. C.Aragon, RicardoBismuth MolybdatesElectrical TransportOxygen Ionic ConductionPhotoconductivityhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaAcademic Press Inc Elsevier Science2008-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82041Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-10790022-4596CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022459608000881info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jssc.2008.02.005info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:03:00Zoai:ri.conicet.gov.ar:11336/82041instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:03:00.657CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| title |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| spellingShingle |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 Vera, Claudia M. C. Bismuth Molybdates Electrical Transport Oxygen Ionic Conduction Photoconductivity |
| title_short |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| title_full |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| title_fullStr |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| title_full_unstemmed |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| title_sort |
Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6 |
| dc.creator.none.fl_str_mv |
Vera, Claudia M. C. Aragon, Ricardo |
| author |
Vera, Claudia M. C. |
| author_facet |
Vera, Claudia M. C. Aragon, Ricardo |
| author_role |
author |
| author2 |
Aragon, Ricardo |
| author2_role |
author |
| dc.subject.none.fl_str_mv |
Bismuth Molybdates Electrical Transport Oxygen Ionic Conduction Photoconductivity |
| topic |
Bismuth Molybdates Electrical Transport Oxygen Ionic Conduction Photoconductivity |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| dc.description.none.fl_txt_mv |
The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction. Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina |
| description |
The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction. |
| publishDate |
2008 |
| dc.date.none.fl_str_mv |
2008-05 |
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info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
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article |
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publishedVersion |
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http://hdl.handle.net/11336/82041 Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-1079 0022-4596 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/82041 |
| identifier_str_mv |
Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-1079 0022-4596 CONICET Digital CONICET |
| dc.language.none.fl_str_mv |
eng |
| language |
eng |
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info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022459608000881 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jssc.2008.02.005 |
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info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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openAccess |
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https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
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application/pdf application/pdf |
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Academic Press Inc Elsevier Science |
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Academic Press Inc Elsevier Science |
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reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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