Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6

Autores
Vera, Claudia M. C.; Aragon, Ricardo
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.
Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Materia
Bismuth Molybdates
Electrical Transport
Oxygen Ionic Conduction
Photoconductivity
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82041
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/82041
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6Vera, Claudia M. C.Aragon, RicardoBismuth MolybdatesElectrical TransportOxygen Ionic ConductionPhotoconductivityhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaAcademic Press Inc Elsevier Science2008-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82041Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-10790022-4596CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022459608000881info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jssc.2008.02.005info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:03:00Zoai:ri.conicet.gov.ar:11336/82041instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:03:00.657CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
title Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
spellingShingle Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
Vera, Claudia M. C.
Bismuth Molybdates
Electrical Transport
Oxygen Ionic Conduction
Photoconductivity
title_short Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
title_full Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
title_fullStr Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
title_full_unstemmed Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
title_sort Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6
dc.creator.none.fl_str_mv Vera, Claudia M. C.
Aragon, Ricardo
author Vera, Claudia M. C.
author_facet Vera, Claudia M. C.
Aragon, Ricardo
author_role author
author2 Aragon, Ricardo
author2_role author
dc.subject.none.fl_str_mv Bismuth Molybdates
Electrical Transport
Oxygen Ionic Conduction
Photoconductivity
topic Bismuth Molybdates
Electrical Transport
Oxygen Ionic Conduction
Photoconductivity
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.
Fil: Vera, Claudia M. C.. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
description The electrical conductivity of γ′-Bi2MoO6 was surveyed between 450 and 750 °C as a function of oxygen partial pressure, in the range 0.01-1 atm. A -frac(1, 6) power law dependence, consistent with a Frenkel defect model of doubly ionized oxygen vacancies and interstitials, is evidence for an n-type semiconductive component, with an optical band gap of 2.9 eV. The absence of this dependence is used to map the onset of dominant ionic conduction.
publishDate 2008
dc.date.none.fl_str_mv 2008-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82041
Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-1079
0022-4596
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82041
identifier_str_mv Vera, Claudia M. C.; Aragon, Ricardo; Oxygen partial pressure dependence of electrical conductivity in γ′-Bi2MoO6; Academic Press Inc Elsevier Science; Journal of Solid State Chemistry; 181; 5; 5-2008; 1075-1079
0022-4596
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022459608000881
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jssc.2008.02.005
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Academic Press Inc Elsevier Science
publisher.none.fl_str_mv Academic Press Inc Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846782369685569536
score 12.982451

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