Characterization of CuInS2 thin films prepared by one-step electrodeposition

Autores
Di Iorio, Yesica Dolores; Berruet, Mariana; Schreiner, W.; Vazquez, Marcela Vivian
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
CuInS2 thin films were fabricated by one-step electrochemical deposition from a single alkaline aqueous solution and using conductive glass as the substrate. The electrolyte consisted in 0.01 mol L-1 CuCl2, 0.01 mol L-1 InCl3, 0.5 mol L-1 Na2SO3 and 0.2 mol L-1 Na3C3H5- O(COO)3 (CitNa) at pH 8. The films were analyzed using a variety of techniques such as X-ray diffractometry, micro- Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy and photoelectrochemistry. After carrying out a thermal treatment in sulfur vapor, chalcopyrite CuInS2 thin films were obtained. Etching the films in KCN solution was found to be a key step, enabling a final adjustment in the stoichiometry. These thin films exhibited p-type semiconductor behavior with the bandgap of 1.43 eV. The results show that electrodeposition provides a cost-effective and versatile method for the preparation of thin films of CuInS2, even when acidic precursors need to be avoided.
Fil: Di Iorio, Yesica Dolores. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Schreiner, W.. Universidade Federal do Parana; Brasil
Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Materia
Semiconductors
Cuins2
Electrodeposition
Thin Films
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/5183

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network_name_str CONICET Digital (CONICET)
spelling Characterization of CuInS2 thin films prepared by one-step electrodepositionDi Iorio, Yesica DoloresBerruet, MarianaSchreiner, W.Vazquez, Marcela VivianSemiconductorsCuins2ElectrodepositionThin Filmshttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1CuInS2 thin films were fabricated by one-step electrochemical deposition from a single alkaline aqueous solution and using conductive glass as the substrate. The electrolyte consisted in 0.01 mol L-1 CuCl2, 0.01 mol L-1 InCl3, 0.5 mol L-1 Na2SO3 and 0.2 mol L-1 Na3C3H5- O(COO)3 (CitNa) at pH 8. The films were analyzed using a variety of techniques such as X-ray diffractometry, micro- Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy and photoelectrochemistry. After carrying out a thermal treatment in sulfur vapor, chalcopyrite CuInS2 thin films were obtained. Etching the films in KCN solution was found to be a key step, enabling a final adjustment in the stoichiometry. These thin films exhibited p-type semiconductor behavior with the bandgap of 1.43 eV. The results show that electrodeposition provides a cost-effective and versatile method for the preparation of thin films of CuInS2, even when acidic precursors need to be avoided.Fil: Di Iorio, Yesica Dolores. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Schreiner, W.. Universidade Federal do Parana; BrasilFil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaSpringer2014-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/5183Di Iorio, Yesica Dolores; Berruet, Mariana; Schreiner, W.; Vazquez, Marcela Vivian; Characterization of CuInS2 thin films prepared by one-step electrodeposition; Springer; Journal of Applied Electrochemistry; 44; 12; 12-2014; 1279-12870021-891Xenginfo:eu-repo/semantics/altIdentifier/issn/0021-891Xinfo:eu-repo/semantics/altIdentifier/url/http://link.springer.com/article/10.1007%2Fs10800-014-0752-5info:eu-repo/semantics/altIdentifier/doi/10.1007/s10800-014-0752-5info:eu-repo/semantics/altIdentifier/doi/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:59:58Zoai:ri.conicet.gov.ar:11336/5183instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:59:58.3CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characterization of CuInS2 thin films prepared by one-step electrodeposition
title Characterization of CuInS2 thin films prepared by one-step electrodeposition
spellingShingle Characterization of CuInS2 thin films prepared by one-step electrodeposition
Di Iorio, Yesica Dolores
Semiconductors
Cuins2
Electrodeposition
Thin Films
title_short Characterization of CuInS2 thin films prepared by one-step electrodeposition
title_full Characterization of CuInS2 thin films prepared by one-step electrodeposition
title_fullStr Characterization of CuInS2 thin films prepared by one-step electrodeposition
title_full_unstemmed Characterization of CuInS2 thin films prepared by one-step electrodeposition
title_sort Characterization of CuInS2 thin films prepared by one-step electrodeposition
dc.creator.none.fl_str_mv Di Iorio, Yesica Dolores
Berruet, Mariana
Schreiner, W.
Vazquez, Marcela Vivian
author Di Iorio, Yesica Dolores
author_facet Di Iorio, Yesica Dolores
Berruet, Mariana
Schreiner, W.
Vazquez, Marcela Vivian
author_role author
author2 Berruet, Mariana
Schreiner, W.
Vazquez, Marcela Vivian
author2_role author
author
author
dc.subject.none.fl_str_mv Semiconductors
Cuins2
Electrodeposition
Thin Films
topic Semiconductors
Cuins2
Electrodeposition
Thin Films
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv CuInS2 thin films were fabricated by one-step electrochemical deposition from a single alkaline aqueous solution and using conductive glass as the substrate. The electrolyte consisted in 0.01 mol L-1 CuCl2, 0.01 mol L-1 InCl3, 0.5 mol L-1 Na2SO3 and 0.2 mol L-1 Na3C3H5- O(COO)3 (CitNa) at pH 8. The films were analyzed using a variety of techniques such as X-ray diffractometry, micro- Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy and photoelectrochemistry. After carrying out a thermal treatment in sulfur vapor, chalcopyrite CuInS2 thin films were obtained. Etching the films in KCN solution was found to be a key step, enabling a final adjustment in the stoichiometry. These thin films exhibited p-type semiconductor behavior with the bandgap of 1.43 eV. The results show that electrodeposition provides a cost-effective and versatile method for the preparation of thin films of CuInS2, even when acidic precursors need to be avoided.
Fil: Di Iorio, Yesica Dolores. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Berruet, Mariana. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Schreiner, W.. Universidade Federal do Parana; Brasil
Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
description CuInS2 thin films were fabricated by one-step electrochemical deposition from a single alkaline aqueous solution and using conductive glass as the substrate. The electrolyte consisted in 0.01 mol L-1 CuCl2, 0.01 mol L-1 InCl3, 0.5 mol L-1 Na2SO3 and 0.2 mol L-1 Na3C3H5- O(COO)3 (CitNa) at pH 8. The films were analyzed using a variety of techniques such as X-ray diffractometry, micro- Raman spectroscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy and photoelectrochemistry. After carrying out a thermal treatment in sulfur vapor, chalcopyrite CuInS2 thin films were obtained. Etching the films in KCN solution was found to be a key step, enabling a final adjustment in the stoichiometry. These thin films exhibited p-type semiconductor behavior with the bandgap of 1.43 eV. The results show that electrodeposition provides a cost-effective and versatile method for the preparation of thin films of CuInS2, even when acidic precursors need to be avoided.
publishDate 2014
dc.date.none.fl_str_mv 2014-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/5183
Di Iorio, Yesica Dolores; Berruet, Mariana; Schreiner, W.; Vazquez, Marcela Vivian; Characterization of CuInS2 thin films prepared by one-step electrodeposition; Springer; Journal of Applied Electrochemistry; 44; 12; 12-2014; 1279-1287
0021-891X
url http://hdl.handle.net/11336/5183
identifier_str_mv Di Iorio, Yesica Dolores; Berruet, Mariana; Schreiner, W.; Vazquez, Marcela Vivian; Characterization of CuInS2 thin films prepared by one-step electrodeposition; Springer; Journal of Applied Electrochemistry; 44; 12; 12-2014; 1279-1287
0021-891X
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/issn/0021-891X
info:eu-repo/semantics/altIdentifier/url/http://link.springer.com/article/10.1007%2Fs10800-014-0752-5
info:eu-repo/semantics/altIdentifier/doi/10.1007/s10800-014-0752-5
info:eu-repo/semantics/altIdentifier/doi/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
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dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
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repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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