Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates
- Autores
- Valdes, Matias Hernan; Vazquez, Marcela Vivian; Goossens, A.
- Año de publicación
- 2008
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- In2Se3 and CuInSe2 films have been prepared by potentiostatic electrodeposition from deareated aqueous solutions. The substrate consisted of a duplex layer of dense and nanoporous TiO2 obtained by spray pyrolysis deposition (SPD) and doctor blading. In2Se3 thin films are electrodeposited in between the TiO2/CuInSe2 pn heterojunction to block the electron back flow and lower the interfacial recombination produced upon illumination. The films have been characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and optical transmission. Annealing the samples in Se atmosphere is essential to improve the crystallinity of the In2Se3 and CuInSe2 films. The combination of TiO2/In2Se3/CuInSe2 shows very good diode behavior with a rectification ratio higher than 100 at ±1 V.
Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Goossens, A.. Delft University of Technology; Países Bajos - Materia
-
Buffer Layer
Cuinse2
Electrodeposition
Heterojunction
Tio2 - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/67960
Ver los metadatos del registro completo
id |
CONICETDig_12f5fa144fb5e7f913af3e946cc2c86b |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/67960 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substratesValdes, Matias HernanVazquez, Marcela VivianGoossens, A.Buffer LayerCuinse2ElectrodepositionHeterojunctionTio2https://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2In2Se3 and CuInSe2 films have been prepared by potentiostatic electrodeposition from deareated aqueous solutions. The substrate consisted of a duplex layer of dense and nanoporous TiO2 obtained by spray pyrolysis deposition (SPD) and doctor blading. In2Se3 thin films are electrodeposited in between the TiO2/CuInSe2 pn heterojunction to block the electron back flow and lower the interfacial recombination produced upon illumination. The films have been characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and optical transmission. Annealing the samples in Se atmosphere is essential to improve the crystallinity of the In2Se3 and CuInSe2 films. The combination of TiO2/In2Se3/CuInSe2 shows very good diode behavior with a rectification ratio higher than 100 at ±1 V.Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Goossens, A.. Delft University of Technology; Países BajosPergamon-Elsevier Science Ltd2008-12-23info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/67960Valdes, Matias Hernan; Vazquez, Marcela Vivian; Goossens, A.; Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates; Pergamon-Elsevier Science Ltd; Electrochimica Acta; 54; 2; 23-12-2008; 524-5290013-4686CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0013468608008918info:eu-repo/semantics/altIdentifier/doi/10.1016/j.electacta.2008.07.036info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:55:04Zoai:ri.conicet.gov.ar:11336/67960instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:55:04.672CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
title |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
spellingShingle |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates Valdes, Matias Hernan Buffer Layer Cuinse2 Electrodeposition Heterojunction Tio2 |
title_short |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
title_full |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
title_fullStr |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
title_full_unstemmed |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
title_sort |
Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates |
dc.creator.none.fl_str_mv |
Valdes, Matias Hernan Vazquez, Marcela Vivian Goossens, A. |
author |
Valdes, Matias Hernan |
author_facet |
Valdes, Matias Hernan Vazquez, Marcela Vivian Goossens, A. |
author_role |
author |
author2 |
Vazquez, Marcela Vivian Goossens, A. |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Buffer Layer Cuinse2 Electrodeposition Heterojunction Tio2 |
topic |
Buffer Layer Cuinse2 Electrodeposition Heterojunction Tio2 |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.5 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
In2Se3 and CuInSe2 films have been prepared by potentiostatic electrodeposition from deareated aqueous solutions. The substrate consisted of a duplex layer of dense and nanoporous TiO2 obtained by spray pyrolysis deposition (SPD) and doctor blading. In2Se3 thin films are electrodeposited in between the TiO2/CuInSe2 pn heterojunction to block the electron back flow and lower the interfacial recombination produced upon illumination. The films have been characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and optical transmission. Annealing the samples in Se atmosphere is essential to improve the crystallinity of the In2Se3 and CuInSe2 films. The combination of TiO2/In2Se3/CuInSe2 shows very good diode behavior with a rectification ratio higher than 100 at ±1 V. Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina Fil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina Fil: Goossens, A.. Delft University of Technology; Países Bajos |
description |
In2Se3 and CuInSe2 films have been prepared by potentiostatic electrodeposition from deareated aqueous solutions. The substrate consisted of a duplex layer of dense and nanoporous TiO2 obtained by spray pyrolysis deposition (SPD) and doctor blading. In2Se3 thin films are electrodeposited in between the TiO2/CuInSe2 pn heterojunction to block the electron back flow and lower the interfacial recombination produced upon illumination. The films have been characterized using X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and optical transmission. Annealing the samples in Se atmosphere is essential to improve the crystallinity of the In2Se3 and CuInSe2 films. The combination of TiO2/In2Se3/CuInSe2 shows very good diode behavior with a rectification ratio higher than 100 at ±1 V. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-12-23 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/67960 Valdes, Matias Hernan; Vazquez, Marcela Vivian; Goossens, A.; Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates; Pergamon-Elsevier Science Ltd; Electrochimica Acta; 54; 2; 23-12-2008; 524-529 0013-4686 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/67960 |
identifier_str_mv |
Valdes, Matias Hernan; Vazquez, Marcela Vivian; Goossens, A.; Electrodeposition of CuInSe2 and In2Se3 on flat and nanoporous TiO2 substrates; Pergamon-Elsevier Science Ltd; Electrochimica Acta; 54; 2; 23-12-2008; 524-529 0013-4686 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0013468608008918 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.electacta.2008.07.036 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Pergamon-Elsevier Science Ltd |
publisher.none.fl_str_mv |
Pergamon-Elsevier Science Ltd |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1842269322106372096 |
score |
13.13397 |