The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

Autores
Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; Pusep, Y. A.; Comedi, David Mario; Guimarães, F. E. G.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.
Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; Brasil
Fil: Nunez, L. A. O.. Universidade de Sao Paulo; Brasil
Fil: Andreeta, M. R. B.. Universidade de Sao Paulo; Brasil
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. MacMaster University; Canadá
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Guimarães, F. E. G.. Universidade de Sao Paulo; Brasil
Materia
EXCITON
LIFETIMES
SI NANOCLUSTERS
QUANTUM CONFINEMENT
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/74305
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclustersBorrero Gonzalez, Luis JoseNunez, L. A. O.Andreeta, M. R. B.Wojcik, J.Mascher, P.Pusep, Y. A.Comedi, David MarioGuimarães, F. E. G.EXCITONLIFETIMESSI NANOCLUSTERSQUANTUM CONFINEMENThttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; BrasilFil: Nunez, L. A. O.. Universidade de Sao Paulo; BrasilFil: Andreeta, M. R. B.. Universidade de Sao Paulo; BrasilFil: Wojcik, J.. McMaster University; CanadáFil: Mascher, P.. MacMaster University; CanadáFil: Pusep, Y. A.. Universidade de Sao Paulo; BrasilFil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; ArgentinaFil: Guimarães, F. E. G.. Universidade de Sao Paulo; BrasilAmerican Institute of Physics2010-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/74305Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-131100021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.3457900info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.3457900info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:34:52Zoai:ri.conicet.gov.ar:11336/74305instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:34:53.215CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
title The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
spellingShingle The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
Borrero Gonzalez, Luis Jose
EXCITON
LIFETIMES
SI NANOCLUSTERS
QUANTUM CONFINEMENT
title_short The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
title_full The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
title_fullStr The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
title_full_unstemmed The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
title_sort The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
dc.creator.none.fl_str_mv Borrero Gonzalez, Luis Jose
Nunez, L. A. O.
Andreeta, M. R. B.
Wojcik, J.
Mascher, P.
Pusep, Y. A.
Comedi, David Mario
Guimarães, F. E. G.
author Borrero Gonzalez, Luis Jose
author_facet Borrero Gonzalez, Luis Jose
Nunez, L. A. O.
Andreeta, M. R. B.
Wojcik, J.
Mascher, P.
Pusep, Y. A.
Comedi, David Mario
Guimarães, F. E. G.
author_role author
author2 Nunez, L. A. O.
Andreeta, M. R. B.
Wojcik, J.
Mascher, P.
Pusep, Y. A.
Comedi, David Mario
Guimarães, F. E. G.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv EXCITON
LIFETIMES
SI NANOCLUSTERS
QUANTUM CONFINEMENT
topic EXCITON
LIFETIMES
SI NANOCLUSTERS
QUANTUM CONFINEMENT
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.
Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; Brasil
Fil: Nunez, L. A. O.. Universidade de Sao Paulo; Brasil
Fil: Andreeta, M. R. B.. Universidade de Sao Paulo; Brasil
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. MacMaster University; Canadá
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Guimarães, F. E. G.. Universidade de Sao Paulo; Brasil
description The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.
publishDate 2010
dc.date.none.fl_str_mv 2010-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/74305
Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-13110
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/74305
identifier_str_mv Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-13110
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3457900
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.3457900
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846781978366443520
score 12.982451

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