The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters
- Autores
- Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; Pusep, Y. A.; Comedi, David Mario; Guimarães, F. E. G.
- Año de publicación
- 2010
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.
Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; Brasil
Fil: Nunez, L. A. O.. Universidade de Sao Paulo; Brasil
Fil: Andreeta, M. R. B.. Universidade de Sao Paulo; Brasil
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. MacMaster University; Canadá
Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Guimarães, F. E. G.. Universidade de Sao Paulo; Brasil - Materia
-
EXCITON
LIFETIMES
SI NANOCLUSTERS
QUANTUM CONFINEMENT - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/74305
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The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclustersBorrero Gonzalez, Luis JoseNunez, L. A. O.Andreeta, M. R. B.Wojcik, J.Mascher, P.Pusep, Y. A.Comedi, David MarioGuimarães, F. E. G.EXCITONLIFETIMESSI NANOCLUSTERSQUANTUM CONFINEMENThttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; BrasilFil: Nunez, L. A. O.. Universidade de Sao Paulo; BrasilFil: Andreeta, M. R. B.. Universidade de Sao Paulo; BrasilFil: Wojcik, J.. McMaster University; CanadáFil: Mascher, P.. MacMaster University; CanadáFil: Pusep, Y. A.. Universidade de Sao Paulo; BrasilFil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; ArgentinaFil: Guimarães, F. E. G.. Universidade de Sao Paulo; BrasilAmerican Institute of Physics2010-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/74305Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-131100021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.3457900info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.3457900info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:05:11Zoai:ri.conicet.gov.ar:11336/74305instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:05:12.101CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
title |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
spellingShingle |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters Borrero Gonzalez, Luis Jose EXCITON LIFETIMES SI NANOCLUSTERS QUANTUM CONFINEMENT |
title_short |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
title_full |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
title_fullStr |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
title_full_unstemmed |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
title_sort |
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters |
dc.creator.none.fl_str_mv |
Borrero Gonzalez, Luis Jose Nunez, L. A. O. Andreeta, M. R. B. Wojcik, J. Mascher, P. Pusep, Y. A. Comedi, David Mario Guimarães, F. E. G. |
author |
Borrero Gonzalez, Luis Jose |
author_facet |
Borrero Gonzalez, Luis Jose Nunez, L. A. O. Andreeta, M. R. B. Wojcik, J. Mascher, P. Pusep, Y. A. Comedi, David Mario Guimarães, F. E. G. |
author_role |
author |
author2 |
Nunez, L. A. O. Andreeta, M. R. B. Wojcik, J. Mascher, P. Pusep, Y. A. Comedi, David Mario Guimarães, F. E. G. |
author2_role |
author author author author author author author |
dc.subject.none.fl_str_mv |
EXCITON LIFETIMES SI NANOCLUSTERS QUANTUM CONFINEMENT |
topic |
EXCITON LIFETIMES SI NANOCLUSTERS QUANTUM CONFINEMENT |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl. Fil: Borrero Gonzalez, Luis Jose. Universidade de Sao Paulo; Brasil Fil: Nunez, L. A. O.. Universidade de Sao Paulo; Brasil Fil: Andreeta, M. R. B.. Universidade de Sao Paulo; Brasil Fil: Wojcik, J.. McMaster University; Canadá Fil: Mascher, P.. MacMaster University; Canadá Fil: Pusep, Y. A.. Universidade de Sao Paulo; Brasil Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina Fil: Guimarães, F. E. G.. Universidade de Sao Paulo; Brasil |
description |
The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl. |
publishDate |
2010 |
dc.date.none.fl_str_mv |
2010-07 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/74305 Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-13110 0021-8979 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/74305 |
identifier_str_mv |
Borrero Gonzalez, Luis Jose; Nunez, L. A. O.; Andreeta, M. R. B.; Wojcik, J.; Mascher, P.; et al.; The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters; American Institute of Physics; Journal of Applied Physics; 108; 1; 7-2010; 13105-13110 0021-8979 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3457900 info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.3457900 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613885414342656 |
score |
13.070432 |