Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors

Autores
Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo
Año de publicación
2007
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.
Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Weinmann, Dietmar. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia
Fil: Jalabert, Rodolfo. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia
Materia
Semiconductors
Spintronics
Spin-Orbit Interaction
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/67523
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Relaxation mechanism for electron spin in the impurity band of n -doped semiconductorsTamborenea, Pablo IgnacioWeinmann, DietmarJalabert, RodolfoSemiconductorsSpintronicsSpin-Orbit Interactionhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Weinmann, Dietmar. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; FranciaFil: Jalabert, Rodolfo. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; FranciaAmerican Physical Society2007-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/67523Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo; Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 76; 8; 12-2007; 852091-8520961098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://prb.aps.org/abstract/PRB/v76/i8/e085209info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.76.085209info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:43:51Zoai:ri.conicet.gov.ar:11336/67523instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:43:51.851CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
spellingShingle Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
Tamborenea, Pablo Ignacio
Semiconductors
Spintronics
Spin-Orbit Interaction
title_short Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_full Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_fullStr Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_full_unstemmed Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_sort Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
dc.creator.none.fl_str_mv Tamborenea, Pablo Ignacio
Weinmann, Dietmar
Jalabert, Rodolfo
author Tamborenea, Pablo Ignacio
author_facet Tamborenea, Pablo Ignacio
Weinmann, Dietmar
Jalabert, Rodolfo
author_role author
author2 Weinmann, Dietmar
Jalabert, Rodolfo
author2_role author
author
dc.subject.none.fl_str_mv Semiconductors
Spintronics
Spin-Orbit Interaction
topic Semiconductors
Spintronics
Spin-Orbit Interaction
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.
Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Weinmann, Dietmar. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia
Fil: Jalabert, Rodolfo. Universite Paul Verlaine-metz. Institut de Physique, Chimie Et Materiaux; Francia
description We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.
publishDate 2007
dc.date.none.fl_str_mv 2007-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/67523
Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo; Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 76; 8; 12-2007; 852091-852096
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/67523
identifier_str_mv Tamborenea, Pablo Ignacio; Weinmann, Dietmar; Jalabert, Rodolfo; Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 76; 8; 12-2007; 852091-852096
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://prb.aps.org/abstract/PRB/v76/i8/e085209
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.76.085209
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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