Spin-relaxation time in the impurity band of wurtzite semiconductors

Autores
Tamborenea, Pablo Ignacio; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.
Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Wellens, Thomas. Physikalisches Institut der Albert-Ludwigs-Universität; Alemania
Fil: Weinmann, Dietmar. Université de Strasbourg; Francia
Fil: Jalabert, Rodolfo. Université de Strasbourg; Francia
Materia
SEMICONDUCTORS
WURTZITE
SPIN RELAXATION
SPINTRONICS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/42898
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/42898
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Spin-relaxation time in the impurity band of wurtzite semiconductorsTamborenea, Pablo IgnacioWellens, ThomasWeinmann, DietmarJalabert, RodolfoSEMICONDUCTORSWURTZITESPIN RELAXATIONSPINTRONICShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Wellens, Thomas. Physikalisches Institut der Albert-Ludwigs-Universität; AlemaniaFil: Weinmann, Dietmar. Université de Strasbourg; FranciaFil: Jalabert, Rodolfo. Université de Strasbourg; FranciaAmerican Physical Society2017-09-18info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/42898Tamborenea, Pablo Ignacio; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo; Spin-relaxation time in the impurity band of wurtzite semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 96; 12; 18-9-2017; 1-27; 1252051098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://link.aps.org/doi/10.1103/PhysRevB.96.125205info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.96.125205info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/pdf/1706.07318.pdfinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:45:55Zoai:ri.conicet.gov.ar:11336/42898instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:45:56.246CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Spin-relaxation time in the impurity band of wurtzite semiconductors
title Spin-relaxation time in the impurity band of wurtzite semiconductors
spellingShingle Spin-relaxation time in the impurity band of wurtzite semiconductors
Tamborenea, Pablo Ignacio
SEMICONDUCTORS
WURTZITE
SPIN RELAXATION
SPINTRONICS
title_short Spin-relaxation time in the impurity band of wurtzite semiconductors
title_full Spin-relaxation time in the impurity band of wurtzite semiconductors
title_fullStr Spin-relaxation time in the impurity band of wurtzite semiconductors
title_full_unstemmed Spin-relaxation time in the impurity band of wurtzite semiconductors
title_sort Spin-relaxation time in the impurity band of wurtzite semiconductors
dc.creator.none.fl_str_mv Tamborenea, Pablo Ignacio
Wellens, Thomas
Weinmann, Dietmar
Jalabert, Rodolfo
author Tamborenea, Pablo Ignacio
author_facet Tamborenea, Pablo Ignacio
Wellens, Thomas
Weinmann, Dietmar
Jalabert, Rodolfo
author_role author
author2 Wellens, Thomas
Weinmann, Dietmar
Jalabert, Rodolfo
author2_role author
author
author
dc.subject.none.fl_str_mv SEMICONDUCTORS
WURTZITE
SPIN RELAXATION
SPINTRONICS
topic SEMICONDUCTORS
WURTZITE
SPIN RELAXATION
SPINTRONICS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.
Fil: Tamborenea, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: Wellens, Thomas. Physikalisches Institut der Albert-Ludwigs-Universität; Alemania
Fil: Weinmann, Dietmar. Université de Strasbourg; Francia
Fil: Jalabert, Rodolfo. Université de Strasbourg; Francia
description The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.
publishDate 2017
dc.date.none.fl_str_mv 2017-09-18
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/42898
Tamborenea, Pablo Ignacio; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo; Spin-relaxation time in the impurity band of wurtzite semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 96; 12; 18-9-2017; 1-27; 125205
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/42898
identifier_str_mv Tamborenea, Pablo Ignacio; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo; Spin-relaxation time in the impurity band of wurtzite semiconductors; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 96; 12; 18-9-2017; 1-27; 125205
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://link.aps.org/doi/10.1103/PhysRevB.96.125205
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.96.125205
info:eu-repo/semantics/altIdentifier/url/https://arxiv.org/pdf/1706.07318.pdf
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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